Multilayered optical bit memory with a high signal-to-noise ratio in fluorescent polymethylmethacrylate

We report on the three-dimensional optical memory utilizing a photoluminescence (PL) change in polymethylmethacrylate. Irradiation with a femtosecond pulsed laser (800 nm, 1 kHz, 100 fs) induced a strong PL spectrum in the visible range, which may result from the photogeneration of emissive radicals...

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Veröffentlicht in:Applied physics letters 2009-03, Vol.94 (11)
Hauptverfasser: Nie, Zhaogang, Lee, Heungyeol, Yoo, Hyeonggeun, Lee, Youlee, Kim, Younshil, Lim, Ki-Soo, Lee, Myeongkyu
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container_issue 11
container_start_page
container_title Applied physics letters
container_volume 94
creator Nie, Zhaogang
Lee, Heungyeol
Yoo, Hyeonggeun
Lee, Youlee
Kim, Younshil
Lim, Ki-Soo
Lee, Myeongkyu
description We report on the three-dimensional optical memory utilizing a photoluminescence (PL) change in polymethylmethacrylate. Irradiation with a femtosecond pulsed laser (800 nm, 1 kHz, 100 fs) induced a strong PL spectrum in the visible range, which may result from the photogeneration of emissive radicals. Multilayered patterns were recorded inside the bulk sample by tightly focusing a pulsed laser beam. The pattern images were read out by a reflection-type fluorescent confocal microscope which detected the blue-green emission at 410–510 nm. The stored bits were retrieved with a high signal-to-noise ratio in the absence of any cross-talk.
doi_str_mv 10.1063/1.3103365
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subjects CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
FOCUSING
LASERS
LAYERS
MICROSCOPES
PHOTOLUMINESCENCE
POLYMERS
RADICALS
REFLECTION
SIGNAL-TO-NOISE RATIO
title Multilayered optical bit memory with a high signal-to-noise ratio in fluorescent polymethylmethacrylate
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