Local stress engineering of magnetic anisotropy in soft magnetic thin films
The magnetic anisotropy of amorphous thin films was modified laterally by masked ion irradiation without alteration of the intrinsic magnetic properties. The changes were introduced by local ion implantation in a protection layer, causing additional stress-induced magnetic anisotropy in the magnetos...
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Veröffentlicht in: | Applied physics letters 2009-02, Vol.94 (6), p.062506-062506-3 |
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container_issue | 6 |
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container_title | Applied physics letters |
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creator | Martin, Norbert McCord, Jeffrey Gerber, Andreas Strache, Thomas Gemming, Thomas Mönch, Ingolf Farag, Nayel Schäfer, Rudolf Fassbender, Jürgen Quandt, Eckhard Schultz, Ludwig |
description | The magnetic anisotropy of amorphous thin films was modified laterally by masked ion irradiation without alteration of the intrinsic magnetic properties. The changes were introduced by local ion implantation in a protection layer, causing additional stress-induced magnetic anisotropy in the magnetostrictive layer. The underlying local variation in magnetic anisotropy was modeled and confirmed experimentally. The described method, relying purely on magnetoelastics, introduces a new path to the alteration of magnetic properties subsequent to magnetic film preparation. With the use of the resulting artificial magnetization patterns, it is possible to tailor the ferromagnetic thin film structure used in magnetoelectronic applications. |
doi_str_mv | 10.1063/1.3079664 |
format | Article |
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The changes were introduced by local ion implantation in a protection layer, causing additional stress-induced magnetic anisotropy in the magnetostrictive layer. The underlying local variation in magnetic anisotropy was modeled and confirmed experimentally. The described method, relying purely on magnetoelastics, introduces a new path to the alteration of magnetic properties subsequent to magnetic film preparation. With the use of the resulting artificial magnetization patterns, it is possible to tailor the ferromagnetic thin film structure used in magnetoelectronic applications.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.3079664</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>United States: American Institute of Physics</publisher><subject>AMORPHOUS STATE ; ANISOTROPY ; ION IMPLANTATION ; LAYERS ; MAGNETIC MATERIALS ; MAGNETIZATION ; MAGNETOSTRICTION ; MATERIALS SCIENCE ; STRESSES ; THIN FILMS</subject><ispartof>Applied physics letters, 2009-02, Vol.94 (6), p.062506-062506-3</ispartof><rights>2009 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c378t-9677d8fb2858ae8726d812d99e3c829c3bed617af7f04f054705f35d0f4e1a1e3</citedby><cites>FETCH-LOGICAL-c378t-9677d8fb2858ae8726d812d99e3c829c3bed617af7f04f054705f35d0f4e1a1e3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.3079664$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>230,314,776,780,790,881,1553,4498,27901,27902,76353,76359</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/21175958$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Martin, Norbert</creatorcontrib><creatorcontrib>McCord, Jeffrey</creatorcontrib><creatorcontrib>Gerber, Andreas</creatorcontrib><creatorcontrib>Strache, Thomas</creatorcontrib><creatorcontrib>Gemming, Thomas</creatorcontrib><creatorcontrib>Mönch, Ingolf</creatorcontrib><creatorcontrib>Farag, Nayel</creatorcontrib><creatorcontrib>Schäfer, Rudolf</creatorcontrib><creatorcontrib>Fassbender, Jürgen</creatorcontrib><creatorcontrib>Quandt, Eckhard</creatorcontrib><creatorcontrib>Schultz, Ludwig</creatorcontrib><title>Local stress engineering of magnetic anisotropy in soft magnetic thin films</title><title>Applied physics letters</title><description>The magnetic anisotropy of amorphous thin films was modified laterally by masked ion irradiation without alteration of the intrinsic magnetic properties. The changes were introduced by local ion implantation in a protection layer, causing additional stress-induced magnetic anisotropy in the magnetostrictive layer. The underlying local variation in magnetic anisotropy was modeled and confirmed experimentally. The described method, relying purely on magnetoelastics, introduces a new path to the alteration of magnetic properties subsequent to magnetic film preparation. With the use of the resulting artificial magnetization patterns, it is possible to tailor the ferromagnetic thin film structure used in magnetoelectronic applications.</description><subject>AMORPHOUS STATE</subject><subject>ANISOTROPY</subject><subject>ION IMPLANTATION</subject><subject>LAYERS</subject><subject>MAGNETIC MATERIALS</subject><subject>MAGNETIZATION</subject><subject>MAGNETOSTRICTION</subject><subject>MATERIALS SCIENCE</subject><subject>STRESSES</subject><subject>THIN FILMS</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNp1kE1LAzEURYMoWKsL_0HAlYupeZPJ10aQYlUsuNF1SDNJG2mTkmTTf-_UKbhydXn3He7iIHQLZAaE0weYUSIU590ZmgARoqEA8hxNCCG04YrBJboq5Xs4WUvpBL0vkzVbXGp2pWAX1yE6l0Nc4-Txzqyjq8FiE0NJNaf9AYeIS_L171c3Q-XDdleu0YU32-JuTjlFX4vnz_lrs_x4eZs_LRtLhayN4kL00q9ayaRxUrS8l9D2SjlqZassXbmegzBeeNJ5wjpBmKesJ75zYMDRKbobd1OpQRcbqrMbm2J0tuoWQDDF5EDdj5TNqZTsvN7nsDP5oIHooysN-uRqYB9H9jhmakjxf_hXmB6F6ZMw-gPH8HDz</recordid><startdate>20090209</startdate><enddate>20090209</enddate><creator>Martin, Norbert</creator><creator>McCord, Jeffrey</creator><creator>Gerber, Andreas</creator><creator>Strache, Thomas</creator><creator>Gemming, Thomas</creator><creator>Mönch, Ingolf</creator><creator>Farag, Nayel</creator><creator>Schäfer, Rudolf</creator><creator>Fassbender, Jürgen</creator><creator>Quandt, Eckhard</creator><creator>Schultz, Ludwig</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>20090209</creationdate><title>Local stress engineering of magnetic anisotropy in soft magnetic thin films</title><author>Martin, Norbert ; McCord, Jeffrey ; Gerber, Andreas ; Strache, Thomas ; Gemming, Thomas ; Mönch, Ingolf ; Farag, Nayel ; Schäfer, Rudolf ; Fassbender, Jürgen ; Quandt, Eckhard ; Schultz, Ludwig</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c378t-9677d8fb2858ae8726d812d99e3c829c3bed617af7f04f054705f35d0f4e1a1e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><topic>AMORPHOUS STATE</topic><topic>ANISOTROPY</topic><topic>ION IMPLANTATION</topic><topic>LAYERS</topic><topic>MAGNETIC MATERIALS</topic><topic>MAGNETIZATION</topic><topic>MAGNETOSTRICTION</topic><topic>MATERIALS SCIENCE</topic><topic>STRESSES</topic><topic>THIN FILMS</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Martin, Norbert</creatorcontrib><creatorcontrib>McCord, Jeffrey</creatorcontrib><creatorcontrib>Gerber, Andreas</creatorcontrib><creatorcontrib>Strache, Thomas</creatorcontrib><creatorcontrib>Gemming, Thomas</creatorcontrib><creatorcontrib>Mönch, Ingolf</creatorcontrib><creatorcontrib>Farag, Nayel</creatorcontrib><creatorcontrib>Schäfer, Rudolf</creatorcontrib><creatorcontrib>Fassbender, Jürgen</creatorcontrib><creatorcontrib>Quandt, Eckhard</creatorcontrib><creatorcontrib>Schultz, Ludwig</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Martin, Norbert</au><au>McCord, Jeffrey</au><au>Gerber, Andreas</au><au>Strache, Thomas</au><au>Gemming, Thomas</au><au>Mönch, Ingolf</au><au>Farag, Nayel</au><au>Schäfer, Rudolf</au><au>Fassbender, Jürgen</au><au>Quandt, Eckhard</au><au>Schultz, Ludwig</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Local stress engineering of magnetic anisotropy in soft magnetic thin films</atitle><jtitle>Applied physics letters</jtitle><date>2009-02-09</date><risdate>2009</risdate><volume>94</volume><issue>6</issue><spage>062506</spage><epage>062506-3</epage><pages>062506-062506-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>The magnetic anisotropy of amorphous thin films was modified laterally by masked ion irradiation without alteration of the intrinsic magnetic properties. The changes were introduced by local ion implantation in a protection layer, causing additional stress-induced magnetic anisotropy in the magnetostrictive layer. The underlying local variation in magnetic anisotropy was modeled and confirmed experimentally. The described method, relying purely on magnetoelastics, introduces a new path to the alteration of magnetic properties subsequent to magnetic film preparation. With the use of the resulting artificial magnetization patterns, it is possible to tailor the ferromagnetic thin film structure used in magnetoelectronic applications.</abstract><cop>United States</cop><pub>American Institute of Physics</pub><doi>10.1063/1.3079664</doi></addata></record> |
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source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
subjects | AMORPHOUS STATE ANISOTROPY ION IMPLANTATION LAYERS MAGNETIC MATERIALS MAGNETIZATION MAGNETOSTRICTION MATERIALS SCIENCE STRESSES THIN FILMS |
title | Local stress engineering of magnetic anisotropy in soft magnetic thin films |
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