Metal modulation epitaxy growth for extremely high hole concentrations above 10{sup 19} cm{sup -3} in GaN

The free hole carriers in GaN have been limited to concentrations in the low 10{sup 18} cm{sup -3} range due to the deep activation energy, lower solubility, and compensation from defects, therefore, limiting doping efficiency to about 1%. Herein, we report an enhanced doping efficiency up to {appro...

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Veröffentlicht in:	Applied physics letters 2008-10, Vol.93 (17)
Hauptverfasser:	Namkoong, Gon, Trybus, Elaissa, Lee, Kyung Keun, Moseley, Michael, Doolittle, W. Alan, Look, David C.
Format:	Artikel
Sprache:	eng
Schlagworte:	ACTIVATION ENERGY CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY CRYSTAL GROWTH DOPED MATERIALS GALLIUM NITRIDES HOLES LAYERS MAGNESIUM MOLECULAR BEAM EPITAXY PERIODICITY SEMICONDUCTOR MATERIALS
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