Electron-induced surface reactivity modification in Zinc oxide-based thin films

Chemical surface reactivity is a key parameter in modern microelectronic and display technology that is defined by basic physical interactions at the liquid etcher/material surface interface. We apply recently developed low-energy electron irradiation method for surface modification of zinc oxide-ba...

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Veröffentlicht in:Applied physics letters 2008-10, Vol.93 (14), p.144104-144104-3
Hauptverfasser: Sabayev, V., Aronov, D., Oster, L., Rosenman, G.
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container_issue 14
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container_title Applied physics letters
container_volume 93
creator Sabayev, V.
Aronov, D.
Oster, L.
Rosenman, G.
description Chemical surface reactivity is a key parameter in modern microelectronic and display technology that is defined by basic physical interactions at the liquid etcher/material surface interface. We apply recently developed low-energy electron irradiation method for surface modification of zinc oxide-based thin films affording to vary physical processes at the liquid agent/material surface interface/and widely tune its chemical reactivity. Electron irradiation leads to the formation of ultrathin layer on irradiated surface, without generation of volumetric defects, and preserves original optical and conductive properties. The method allows fabrication of high-resolution patterned templates with modified chemical etching resistance for the fabrication of three-dimensional patterned arrays.
doi_str_mv 10.1063/1.2988322
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source AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection
subjects CRYSTAL DEFECTS
ELECTRON BEAMS
ETCHING
FABRICATION
INTERFACES
LAYERS
MATERIALS SCIENCE
REACTIVITY
SEMICONDUCTOR MATERIALS
SURFACE PROPERTIES
THIN FILMS
ZINC OXIDES
title Electron-induced surface reactivity modification in Zinc oxide-based thin films
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