Electron-induced surface reactivity modification in Zinc oxide-based thin films
Chemical surface reactivity is a key parameter in modern microelectronic and display technology that is defined by basic physical interactions at the liquid etcher/material surface interface. We apply recently developed low-energy electron irradiation method for surface modification of zinc oxide-ba...
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Veröffentlicht in: | Applied physics letters 2008-10, Vol.93 (14), p.144104-144104-3 |
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creator | Sabayev, V. Aronov, D. Oster, L. Rosenman, G. |
description | Chemical surface reactivity is a key parameter in modern microelectronic and display technology that is defined by basic physical interactions at the liquid etcher/material surface interface. We apply recently developed low-energy electron irradiation method for surface modification of zinc oxide-based thin films affording to vary physical processes at the liquid agent/material surface interface/and widely tune its chemical reactivity. Electron irradiation leads to the formation of ultrathin layer on irradiated surface, without generation of volumetric defects, and preserves original optical and conductive properties. The method allows fabrication of high-resolution patterned templates with modified chemical etching resistance for the fabrication of three-dimensional patterned arrays. |
doi_str_mv | 10.1063/1.2988322 |
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fullrecord | <record><control><sourceid>scitation_osti_</sourceid><recordid>TN_cdi_osti_scitechconnect_21175650</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>apl</sourcerecordid><originalsourceid>FETCH-LOGICAL-c312t-e6f88d20c061268ef06030a28ce4c3e39063543427ba064dbc2b2441d82f011d3</originalsourceid><addsrcrecordid>eNp1kE1LAzEQhoMoWKsH_8GCJw9bZ5LdbHoRpNQPKPSiFy8hO0lopN2VTSr235vaevQ0zPDMC-_D2DXCBEGKO5zwqVKC8xM2QmiaUiCqUzYCAFHKaY3n7CLGj7zWXIgRW87XjtLQd2Xo7JacLeJ28IZcMThDKXyFtCs2vQ0-kEmh74rQFe-ho6L_DtaVrYn5J63y1Yf1Jl6yM2_W0V0d55i9Pc5fZ8_lYvn0MntYlCSQp9JJr5TlQCCRS-U8SBBguCJXkXBimrvUlah40xqQlW2Jt7yq0CruAdGKMbs55PYxBR0pJEcr6rsut9EcsallDZm6PVA09DEOzuvPIWzMsNMIeu9Loz76yuz9gd2H_Vb9H_6Tpo_SdJYmfgA_9HGE</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Electron-induced surface reactivity modification in Zinc oxide-based thin films</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><source>Alma/SFX Local Collection</source><creator>Sabayev, V. ; Aronov, D. ; Oster, L. ; Rosenman, G.</creator><creatorcontrib>Sabayev, V. ; Aronov, D. ; Oster, L. ; Rosenman, G.</creatorcontrib><description>Chemical surface reactivity is a key parameter in modern microelectronic and display technology that is defined by basic physical interactions at the liquid etcher/material surface interface. We apply recently developed low-energy electron irradiation method for surface modification of zinc oxide-based thin films affording to vary physical processes at the liquid agent/material surface interface/and widely tune its chemical reactivity. Electron irradiation leads to the formation of ultrathin layer on irradiated surface, without generation of volumetric defects, and preserves original optical and conductive properties. The method allows fabrication of high-resolution patterned templates with modified chemical etching resistance for the fabrication of three-dimensional patterned arrays.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.2988322</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>United States: American Institute of Physics</publisher><subject>CRYSTAL DEFECTS ; ELECTRON BEAMS ; ETCHING ; FABRICATION ; INTERFACES ; LAYERS ; MATERIALS SCIENCE ; REACTIVITY ; SEMICONDUCTOR MATERIALS ; SURFACE PROPERTIES ; THIN FILMS ; ZINC OXIDES</subject><ispartof>Applied physics letters, 2008-10, Vol.93 (14), p.144104-144104-3</ispartof><rights>2008 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c312t-e6f88d20c061268ef06030a28ce4c3e39063543427ba064dbc2b2441d82f011d3</citedby><cites>FETCH-LOGICAL-c312t-e6f88d20c061268ef06030a28ce4c3e39063543427ba064dbc2b2441d82f011d3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.2988322$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>230,314,776,780,790,881,1553,4498,27901,27902,76126,76132</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/21175650$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Sabayev, V.</creatorcontrib><creatorcontrib>Aronov, D.</creatorcontrib><creatorcontrib>Oster, L.</creatorcontrib><creatorcontrib>Rosenman, G.</creatorcontrib><title>Electron-induced surface reactivity modification in Zinc oxide-based thin films</title><title>Applied physics letters</title><description>Chemical surface reactivity is a key parameter in modern microelectronic and display technology that is defined by basic physical interactions at the liquid etcher/material surface interface. We apply recently developed low-energy electron irradiation method for surface modification of zinc oxide-based thin films affording to vary physical processes at the liquid agent/material surface interface/and widely tune its chemical reactivity. Electron irradiation leads to the formation of ultrathin layer on irradiated surface, without generation of volumetric defects, and preserves original optical and conductive properties. The method allows fabrication of high-resolution patterned templates with modified chemical etching resistance for the fabrication of three-dimensional patterned arrays.</description><subject>CRYSTAL DEFECTS</subject><subject>ELECTRON BEAMS</subject><subject>ETCHING</subject><subject>FABRICATION</subject><subject>INTERFACES</subject><subject>LAYERS</subject><subject>MATERIALS SCIENCE</subject><subject>REACTIVITY</subject><subject>SEMICONDUCTOR MATERIALS</subject><subject>SURFACE PROPERTIES</subject><subject>THIN FILMS</subject><subject>ZINC OXIDES</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><recordid>eNp1kE1LAzEQhoMoWKsH_8GCJw9bZ5LdbHoRpNQPKPSiFy8hO0lopN2VTSr235vaevQ0zPDMC-_D2DXCBEGKO5zwqVKC8xM2QmiaUiCqUzYCAFHKaY3n7CLGj7zWXIgRW87XjtLQd2Xo7JacLeJ28IZcMThDKXyFtCs2vQ0-kEmh74rQFe-ho6L_DtaVrYn5J63y1Yf1Jl6yM2_W0V0d55i9Pc5fZ8_lYvn0MntYlCSQp9JJr5TlQCCRS-U8SBBguCJXkXBimrvUlah40xqQlW2Jt7yq0CruAdGKMbs55PYxBR0pJEcr6rsut9EcsallDZm6PVA09DEOzuvPIWzMsNMIeu9Loz76yuz9gd2H_Vb9H_6Tpo_SdJYmfgA_9HGE</recordid><startdate>20081006</startdate><enddate>20081006</enddate><creator>Sabayev, V.</creator><creator>Aronov, D.</creator><creator>Oster, L.</creator><creator>Rosenman, G.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>20081006</creationdate><title>Electron-induced surface reactivity modification in Zinc oxide-based thin films</title><author>Sabayev, V. ; Aronov, D. ; Oster, L. ; Rosenman, G.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c312t-e6f88d20c061268ef06030a28ce4c3e39063543427ba064dbc2b2441d82f011d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><topic>CRYSTAL DEFECTS</topic><topic>ELECTRON BEAMS</topic><topic>ETCHING</topic><topic>FABRICATION</topic><topic>INTERFACES</topic><topic>LAYERS</topic><topic>MATERIALS SCIENCE</topic><topic>REACTIVITY</topic><topic>SEMICONDUCTOR MATERIALS</topic><topic>SURFACE PROPERTIES</topic><topic>THIN FILMS</topic><topic>ZINC OXIDES</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sabayev, V.</creatorcontrib><creatorcontrib>Aronov, D.</creatorcontrib><creatorcontrib>Oster, L.</creatorcontrib><creatorcontrib>Rosenman, G.</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Sabayev, V.</au><au>Aronov, D.</au><au>Oster, L.</au><au>Rosenman, G.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electron-induced surface reactivity modification in Zinc oxide-based thin films</atitle><jtitle>Applied physics letters</jtitle><date>2008-10-06</date><risdate>2008</risdate><volume>93</volume><issue>14</issue><spage>144104</spage><epage>144104-3</epage><pages>144104-144104-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Chemical surface reactivity is a key parameter in modern microelectronic and display technology that is defined by basic physical interactions at the liquid etcher/material surface interface. We apply recently developed low-energy electron irradiation method for surface modification of zinc oxide-based thin films affording to vary physical processes at the liquid agent/material surface interface/and widely tune its chemical reactivity. Electron irradiation leads to the formation of ultrathin layer on irradiated surface, without generation of volumetric defects, and preserves original optical and conductive properties. The method allows fabrication of high-resolution patterned templates with modified chemical etching resistance for the fabrication of three-dimensional patterned arrays.</abstract><cop>United States</cop><pub>American Institute of Physics</pub><doi>10.1063/1.2988322</doi></addata></record> |
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source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
subjects | CRYSTAL DEFECTS ELECTRON BEAMS ETCHING FABRICATION INTERFACES LAYERS MATERIALS SCIENCE REACTIVITY SEMICONDUCTOR MATERIALS SURFACE PROPERTIES THIN FILMS ZINC OXIDES |
title | Electron-induced surface reactivity modification in Zinc oxide-based thin films |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-06T18%3A58%3A38IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-scitation_osti_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Electron-induced%20surface%20reactivity%20modification%20in%20Zinc%20oxide-based%20thin%20films&rft.jtitle=Applied%20physics%20letters&rft.au=Sabayev,%20V.&rft.date=2008-10-06&rft.volume=93&rft.issue=14&rft.spage=144104&rft.epage=144104-3&rft.pages=144104-144104-3&rft.issn=0003-6951&rft.eissn=1077-3118&rft.coden=APPLAB&rft_id=info:doi/10.1063/1.2988322&rft_dat=%3Cscitation_osti_%3Eapl%3C/scitation_osti_%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |