Electron-induced surface reactivity modification in Zinc oxide-based thin films

Chemical surface reactivity is a key parameter in modern microelectronic and display technology that is defined by basic physical interactions at the liquid etcher/material surface interface. We apply recently developed low-energy electron irradiation method for surface modification of zinc oxide-ba...

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Veröffentlicht in:Applied physics letters 2008-10, Vol.93 (14), p.144104-144104-3
Hauptverfasser: Sabayev, V., Aronov, D., Oster, L., Rosenman, G.
Format: Artikel
Sprache:eng
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Zusammenfassung:Chemical surface reactivity is a key parameter in modern microelectronic and display technology that is defined by basic physical interactions at the liquid etcher/material surface interface. We apply recently developed low-energy electron irradiation method for surface modification of zinc oxide-based thin films affording to vary physical processes at the liquid agent/material surface interface/and widely tune its chemical reactivity. Electron irradiation leads to the formation of ultrathin layer on irradiated surface, without generation of volumetric defects, and preserves original optical and conductive properties. The method allows fabrication of high-resolution patterned templates with modified chemical etching resistance for the fabrication of three-dimensional patterned arrays.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2988322