Photoexcitation screening of the built-in electric field in ZnO single quantum wells

ZnO / Mg 0.22 Zn 0.78 O quantum wells were studied by excitation-intensity-dependent luminescence at 10 K. The samples were grown by laser molecular-beam epitaxy on ScAlMgO 4 substrates to evaluate the well width dependence (1 to 10 nm) of exciton transition energies. Under weak excitation, the phot...

Ausführliche Beschreibung