Homogeneous growth of antidot structures electrodeposited on Si by nanosphere lithography
The characteristics of cobalt antidot structures, electrodeposited on Si by nanosphere lithography, is investigated by analysis of current transients and optical and atomic force microscopy. Polystyrene colloidal masks of 1 ML (monolayer) or a maximum of 2, with sphere diameters ranging between 165...
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| Veröffentlicht in: | Journal of applied physics 2008-06, Vol.103 (11), p.114306-114306-5 |
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| container_end_page | 114306-5 |
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| container_issue | 11 |
| container_start_page | 114306 |
| container_title | Journal of applied physics |
| container_volume | 103 |
| creator | Spada, Edna R. da Rocha, Alexsandro S. Jasinski, Everton F. Pereira, Guilherme M. C. Chavero, Lucas N. Oliveira, Alexandre B. Azevedo, Antonio Sartorelli, Maria Luisa |
| description | The characteristics of cobalt antidot structures, electrodeposited on Si by nanosphere lithography, is investigated by analysis of current transients and optical and atomic force microscopy. Polystyrene colloidal masks of 1 ML (monolayer) or a maximum of 2, with sphere diameters ranging between 165 and
600
nm
were fabricated by spin coating. For masks partially covered with bilayer regions, it is shown that the volume of deposited material in bilayer areas corresponds to only 5% of the cobalt deposited in the monolayer areas. This drastic reduction in the deposition rate affects the quality of the deposit. Therefore, the use of colloidal masks of homogeneous thickness is necessary to guarantee the electrodeposition of nanostructured films of controlled thickness. It will also be shown that the use of high quality colloidal masks yields a reproducible electrodeposition process, enabling the use of the current transient as a reliable tool for assessment of the deposition process. |
| doi_str_mv | 10.1063/1.2937083 |
| format | Article |
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600
nm
were fabricated by spin coating. For masks partially covered with bilayer regions, it is shown that the volume of deposited material in bilayer areas corresponds to only 5% of the cobalt deposited in the monolayer areas. This drastic reduction in the deposition rate affects the quality of the deposit. Therefore, the use of colloidal masks of homogeneous thickness is necessary to guarantee the electrodeposition of nanostructured films of controlled thickness. It will also be shown that the use of high quality colloidal masks yields a reproducible electrodeposition process, enabling the use of the current transient as a reliable tool for assessment of the deposition process.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.2937083</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>United States: American Institute of Physics</publisher><subject>ATOMIC FORCE MICROSCOPY ; COBALT ; CRYSTAL GROWTH ; ELECTRODEPOSITION ; MATERIALS SCIENCE ; POLYSTYRENE ; QUANTUM DOTS ; SILICON ; THIN FILMS</subject><ispartof>Journal of applied physics, 2008-06, Vol.103 (11), p.114306-114306-5</ispartof><rights>2008 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c312t-f5d0cc2c4c0e4de7c2da9e05d38dfb853e96c4782bb382f468b260a75622ebc3</citedby><cites>FETCH-LOGICAL-c312t-f5d0cc2c4c0e4de7c2da9e05d38dfb853e96c4782bb382f468b260a75622ebc3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/jap/article-lookup/doi/10.1063/1.2937083$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>230,314,776,780,790,881,1553,4497,27903,27904,76130,76136</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/21137346$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Spada, Edna R.</creatorcontrib><creatorcontrib>da Rocha, Alexsandro S.</creatorcontrib><creatorcontrib>Jasinski, Everton F.</creatorcontrib><creatorcontrib>Pereira, Guilherme M. C.</creatorcontrib><creatorcontrib>Chavero, Lucas N.</creatorcontrib><creatorcontrib>Oliveira, Alexandre B.</creatorcontrib><creatorcontrib>Azevedo, Antonio</creatorcontrib><creatorcontrib>Sartorelli, Maria Luisa</creatorcontrib><title>Homogeneous growth of antidot structures electrodeposited on Si by nanosphere lithography</title><title>Journal of applied physics</title><description>The characteristics of cobalt antidot structures, electrodeposited on Si by nanosphere lithography, is investigated by analysis of current transients and optical and atomic force microscopy. Polystyrene colloidal masks of 1 ML (monolayer) or a maximum of 2, with sphere diameters ranging between 165 and
600
nm
were fabricated by spin coating. For masks partially covered with bilayer regions, it is shown that the volume of deposited material in bilayer areas corresponds to only 5% of the cobalt deposited in the monolayer areas. This drastic reduction in the deposition rate affects the quality of the deposit. Therefore, the use of colloidal masks of homogeneous thickness is necessary to guarantee the electrodeposition of nanostructured films of controlled thickness. It will also be shown that the use of high quality colloidal masks yields a reproducible electrodeposition process, enabling the use of the current transient as a reliable tool for assessment of the deposition process.</description><subject>ATOMIC FORCE MICROSCOPY</subject><subject>COBALT</subject><subject>CRYSTAL GROWTH</subject><subject>ELECTRODEPOSITION</subject><subject>MATERIALS SCIENCE</subject><subject>POLYSTYRENE</subject><subject>QUANTUM DOTS</subject><subject>SILICON</subject><subject>THIN FILMS</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><recordid>eNp1kEtLAzEURoMoWKsL_0HAlYupecwjsxGk-IKCC7txFTLJnc5ImzskKdJ_75Tpwo2rb3P4OBxCbjlbcFbKB74QtayYkmdkxpmqs6oo2DmZMSZ4puqqviRXMX4zxrmS9Yx8veEON-AB95FuAv6kjmJLjU-9w0RjCnub9gEihS3YFNDBgLFP4Ch6-tnT5kC98RiHDgLQbZ863AQzdIdrctGabYSb087J-uV5vXzLVh-v78unVWYlFylrC8esFTa3DHIHlRXO1MAKJ5VrG1VIqEubV0o0jVSizUvViJKZqiiFgMbKObmbbjGmXkc7qtnOovejrRacy0rm5UjdT5QNGGOAVg-h35lw0JzpYzjN9SncyD5O7PHMpB79__Cfenqqp1H-AnkHd60</recordid><startdate>20080601</startdate><enddate>20080601</enddate><creator>Spada, Edna R.</creator><creator>da Rocha, Alexsandro S.</creator><creator>Jasinski, Everton F.</creator><creator>Pereira, Guilherme M. C.</creator><creator>Chavero, Lucas N.</creator><creator>Oliveira, Alexandre B.</creator><creator>Azevedo, Antonio</creator><creator>Sartorelli, Maria Luisa</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>20080601</creationdate><title>Homogeneous growth of antidot structures electrodeposited on Si by nanosphere lithography</title><author>Spada, Edna R. ; da Rocha, Alexsandro S. ; Jasinski, Everton F. ; Pereira, Guilherme M. C. ; Chavero, Lucas N. ; Oliveira, Alexandre B. ; Azevedo, Antonio ; Sartorelli, Maria Luisa</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c312t-f5d0cc2c4c0e4de7c2da9e05d38dfb853e96c4782bb382f468b260a75622ebc3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><topic>ATOMIC FORCE MICROSCOPY</topic><topic>COBALT</topic><topic>CRYSTAL GROWTH</topic><topic>ELECTRODEPOSITION</topic><topic>MATERIALS SCIENCE</topic><topic>POLYSTYRENE</topic><topic>QUANTUM DOTS</topic><topic>SILICON</topic><topic>THIN FILMS</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Spada, Edna R.</creatorcontrib><creatorcontrib>da Rocha, Alexsandro S.</creatorcontrib><creatorcontrib>Jasinski, Everton F.</creatorcontrib><creatorcontrib>Pereira, Guilherme M. C.</creatorcontrib><creatorcontrib>Chavero, Lucas N.</creatorcontrib><creatorcontrib>Oliveira, Alexandre B.</creatorcontrib><creatorcontrib>Azevedo, Antonio</creatorcontrib><creatorcontrib>Sartorelli, Maria Luisa</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Spada, Edna R.</au><au>da Rocha, Alexsandro S.</au><au>Jasinski, Everton F.</au><au>Pereira, Guilherme M. C.</au><au>Chavero, Lucas N.</au><au>Oliveira, Alexandre B.</au><au>Azevedo, Antonio</au><au>Sartorelli, Maria Luisa</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Homogeneous growth of antidot structures electrodeposited on Si by nanosphere lithography</atitle><jtitle>Journal of applied physics</jtitle><date>2008-06-01</date><risdate>2008</risdate><volume>103</volume><issue>11</issue><spage>114306</spage><epage>114306-5</epage><pages>114306-114306-5</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>The characteristics of cobalt antidot structures, electrodeposited on Si by nanosphere lithography, is investigated by analysis of current transients and optical and atomic force microscopy. Polystyrene colloidal masks of 1 ML (monolayer) or a maximum of 2, with sphere diameters ranging between 165 and
600
nm
were fabricated by spin coating. For masks partially covered with bilayer regions, it is shown that the volume of deposited material in bilayer areas corresponds to only 5% of the cobalt deposited in the monolayer areas. This drastic reduction in the deposition rate affects the quality of the deposit. Therefore, the use of colloidal masks of homogeneous thickness is necessary to guarantee the electrodeposition of nanostructured films of controlled thickness. It will also be shown that the use of high quality colloidal masks yields a reproducible electrodeposition process, enabling the use of the current transient as a reliable tool for assessment of the deposition process.</abstract><cop>United States</cop><pub>American Institute of Physics</pub><doi>10.1063/1.2937083</doi></addata></record> |
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| ispartof | Journal of applied physics, 2008-06, Vol.103 (11), p.114306-114306-5 |
| issn | 0021-8979 1089-7550 |
| language | eng |
| recordid | cdi_osti_scitechconnect_21137346 |
| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| subjects | ATOMIC FORCE MICROSCOPY COBALT CRYSTAL GROWTH ELECTRODEPOSITION MATERIALS SCIENCE POLYSTYRENE QUANTUM DOTS SILICON THIN FILMS |
| title | Homogeneous growth of antidot structures electrodeposited on Si by nanosphere lithography |
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