A low temperature fabrication of HfO{sub 2} films with supercritical CO{sub 2} fluid treatment

To improve the dielectric properties of sputter-deposited hafnium oxide (HfO{sub 2}) films, the supercritical CO{sub 2} (SCCO{sub 2}) fluid technology is introduced as a low temperature treatment. The ultrathin HfO{sub 2} films were deposited on p-type (100) silicon wafer by dc sputtering at room te...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Journal of applied physics 2008-04, Vol.103 (7)
Hauptverfasser:	Tsai, C.-T., Huang, F.-S., Chang, T.-C., Institute of Electro-Optical Engineering, National Sun Yat-sen University, Kaohsiung 804, Taiwan, Kin, K.-T., Liu, P.-T., Yang, P.-Y., Weng, C.-F.
Format:	Artikel
Sprache:	eng
Schlagworte:	CAPACITANCE CARBON DIOXIDE CURRENT DENSITY DEPOSITION DIELECTRIC MATERIALS DIELECTRIC PROPERTIES ELECTRIC FIELDS ELECTRIC POTENTIAL HAFNIUM OXIDES LEAKAGE CURRENT MATERIALS SCIENCE SILICON SPUTTERING TEMPERATURE RANGE 0065-0273 K TEMPERATURE RANGE 0273-0400 K THIN FILMS
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Schreiben Sie den ersten Kommentar!