Low temperature plasma etching for Si{sub 3}N{sub 4} waveguide applications

Low temperature plasma etching for Si{sub 3}N{sub 4} waveguide applications

Highly selective and anisotropic low temperature electron cyclotron resonance plasma etching process for silicon nitride optical rib waveguide devices compatible with integrated circuit technology is presented. Etching at low temperatures (-30 deg. C) with SF{sub 6}/O{sub 2} chemistry in combination...

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Veröffentlicht in:Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 2008-03, Vol.26 (2)
Hauptverfasser: Celo, D., Vandusen, R., Smy, T., Albert, J., Tarr, N. G., Waldron, P. D., Institute for Microstructural Sciences, NRC 1200 Montreal Road, Ottawa, Ontario K1A 0R6
Format: Artikel
Sprache:eng
Schlagworte:
ANISOTROPY
ELECTRON CYCLOTRON-RESONANCE
ETCHING
FABRICATION
INTEGRATED CIRCUITS
MATERIALS SCIENCE
PLASMA
PROCESSING
SILICON NITRIDES
SILICON OXIDES
SPUTTERING
SULFUR FLUORIDES
WAVEGUIDES
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Zusammenfassung:Highly selective and anisotropic low temperature electron cyclotron resonance plasma etching process for silicon nitride optical rib waveguide devices compatible with integrated circuit technology is presented. Etching at low temperatures (-30 deg. C) with SF{sub 6}/O{sub 2} chemistry in combination with a silicon dioxide hard mask achieved good anisotropy with the vertical sidewalls.
ISSN:0734-2101
1520-8559
DOI:10.1116/1.2836424