Damage accumulation in nitrogen implanted 6H-SiC: Dependence on the direction of ion incidence and on the ion fluence
The influence of crystallographic orientation and ion fluence on the shape of damage distributions induced by 500keV N+ implantation at room temperature into 6H-SiC is investigated. The irradiation was performed at different tilt angles between 0° and 4° with respect to the ⟨0001⟩ crystallographic a...
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| Veröffentlicht in: | Journal of applied physics 2007-01, Vol.101 (2) |
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| Hauptverfasser: | , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
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