Near-edge optical absorption behavior of sputter deposited hafnium dioxide
The absorption behavior at the onset of the ultraviolet optical edge of sputter deposited hafnium dioxide is reported. X-ray diffraction showed that films grown at room temperature on fused silica were nanocrystalline monoclinic, and that after air annealing at 1273 K for 24 h, they were well-crysta...
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creator | Hoppe, E. E. Sorbello, R. S. Aita, C. R. |
description | The absorption behavior at the onset of the ultraviolet optical edge of sputter deposited hafnium dioxide is reported. X-ray diffraction showed that films grown at room temperature on fused silica were nanocrystalline monoclinic, and that after air annealing at 1273 K for 24 h, they were well-crystallized monoclinic with a strong (11–1) texture. Spectrophotometry was used to measure transmission and reflection in the 190–1100 nm wavelength range. The absorption coefficient, α(E), as a function of energy, E, was determined from spectrophotometric data. Two persistent features were identified. Feature I is the rapid rise in α(E) above 6.24 eV that is unchanged upon annealing. A linear α(E)1/2 vs E dependence associates this feature with indirect interband transitions. Feature II initiates at ∼5.65 eV and saturates at 5.94 eV. It appears as a low energy shoulder on the absorption edge of the as-grown films and develops into a discrete and more intense band in the annealed films, in which the coordination of Hf with seven O is satisfied. Its annealing behavior explicitly shows that feature II is not caused by an O defect, but is intrinsic to monoclinic HfO2. |
doi_str_mv | 10.1063/1.2750406 |
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It appears as a low energy shoulder on the absorption edge of the as-grown films and develops into a discrete and more intense band in the annealed films, in which the coordination of Hf with seven O is satisfied. Its annealing behavior explicitly shows that feature II is not caused by an O defect, but is intrinsic to monoclinic HfO2.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.2750406</identifier><language>eng</language><publisher>United States</publisher><subject>ABSORPTION ; ANNEALING ; CRYSTAL DEFECTS ; DEPOSITION ; DIELECTRIC MATERIALS ; ENERGY DEPENDENCE ; ENERGY-LEVEL TRANSITIONS ; EV RANGE 01-10 ; HAFNIUM OXIDES ; MATERIALS SCIENCE ; MONOCLINIC LATTICES ; NANOSTRUCTURES ; SILICA ; SPECTROPHOTOMETRY ; TEMPERATURE DEPENDENCE ; TEMPERATURE RANGE 0273-0400 K ; TEMPERATURE RANGE 1000-4000 K ; TEXTURE ; TIME DEPENDENCE ; ULTRAVIOLET SPECTRA ; X-RAY DIFFRACTION</subject><ispartof>Journal of applied physics, 2007-06, Vol.101 (12)</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c257t-750c138bce66fb3dcbc61ba4faf5dcb3bbc4399c81d7e54190a006aa153137403</citedby><cites>FETCH-LOGICAL-c257t-750c138bce66fb3dcbc61ba4faf5dcb3bbc4399c81d7e54190a006aa153137403</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,776,780,881,27901,27902</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/20979445$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Hoppe, E. E.</creatorcontrib><creatorcontrib>Sorbello, R. S.</creatorcontrib><creatorcontrib>Aita, C. R.</creatorcontrib><title>Near-edge optical absorption behavior of sputter deposited hafnium dioxide</title><title>Journal of applied physics</title><description>The absorption behavior at the onset of the ultraviolet optical edge of sputter deposited hafnium dioxide is reported. X-ray diffraction showed that films grown at room temperature on fused silica were nanocrystalline monoclinic, and that after air annealing at 1273 K for 24 h, they were well-crystallized monoclinic with a strong (11–1) texture. Spectrophotometry was used to measure transmission and reflection in the 190–1100 nm wavelength range. The absorption coefficient, α(E), as a function of energy, E, was determined from spectrophotometric data. Two persistent features were identified. Feature I is the rapid rise in α(E) above 6.24 eV that is unchanged upon annealing. A linear α(E)1/2 vs E dependence associates this feature with indirect interband transitions. Feature II initiates at ∼5.65 eV and saturates at 5.94 eV. It appears as a low energy shoulder on the absorption edge of the as-grown films and develops into a discrete and more intense band in the annealed films, in which the coordination of Hf with seven O is satisfied. Its annealing behavior explicitly shows that feature II is not caused by an O defect, but is intrinsic to monoclinic HfO2.</description><subject>ABSORPTION</subject><subject>ANNEALING</subject><subject>CRYSTAL DEFECTS</subject><subject>DEPOSITION</subject><subject>DIELECTRIC MATERIALS</subject><subject>ENERGY DEPENDENCE</subject><subject>ENERGY-LEVEL TRANSITIONS</subject><subject>EV RANGE 01-10</subject><subject>HAFNIUM OXIDES</subject><subject>MATERIALS SCIENCE</subject><subject>MONOCLINIC LATTICES</subject><subject>NANOSTRUCTURES</subject><subject>SILICA</subject><subject>SPECTROPHOTOMETRY</subject><subject>TEMPERATURE DEPENDENCE</subject><subject>TEMPERATURE RANGE 0273-0400 K</subject><subject>TEMPERATURE RANGE 1000-4000 K</subject><subject>TEXTURE</subject><subject>TIME DEPENDENCE</subject><subject>ULTRAVIOLET SPECTRA</subject><subject>X-RAY DIFFRACTION</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><recordid>eNotUEtLAzEYDKJgrR78BwFPHrZ-3ybZx1GKVqXoRc8hTxtpN0uSiv57V9rTzMAwzAwh1wgLhIbd4aJuBXBoTsgMoeurVgg4JTOAGquub_tzcpHzFwBix_oZeXl1KlXOfjoaxxKM2lKlc0wTjwPVbqO-Q0w0eprHfSkuUevGmENxlm6UH8J-R22IP8G6S3Lm1Ta7qyPOycfjw_vyqVq_rZ6X9-vK1KItUyEwyDptXNN4zazRpkGtuFdeTIJpbTjre9OhbZ3g2IMCaJRCwZC1HNic3BxyYy5BZjN1MRsTh8GZImuYNnIuJtftwWVSzDk5L8cUdir9SgT5f5VEebyK_QEHWVuI</recordid><startdate>20070615</startdate><enddate>20070615</enddate><creator>Hoppe, E. 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R.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c257t-750c138bce66fb3dcbc61ba4faf5dcb3bbc4399c81d7e54190a006aa153137403</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2007</creationdate><topic>ABSORPTION</topic><topic>ANNEALING</topic><topic>CRYSTAL DEFECTS</topic><topic>DEPOSITION</topic><topic>DIELECTRIC MATERIALS</topic><topic>ENERGY DEPENDENCE</topic><topic>ENERGY-LEVEL TRANSITIONS</topic><topic>EV RANGE 01-10</topic><topic>HAFNIUM OXIDES</topic><topic>MATERIALS SCIENCE</topic><topic>MONOCLINIC LATTICES</topic><topic>NANOSTRUCTURES</topic><topic>SILICA</topic><topic>SPECTROPHOTOMETRY</topic><topic>TEMPERATURE DEPENDENCE</topic><topic>TEMPERATURE RANGE 0273-0400 K</topic><topic>TEMPERATURE RANGE 1000-4000 K</topic><topic>TEXTURE</topic><topic>TIME DEPENDENCE</topic><topic>ULTRAVIOLET SPECTRA</topic><topic>X-RAY DIFFRACTION</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hoppe, E. E.</creatorcontrib><creatorcontrib>Sorbello, R. S.</creatorcontrib><creatorcontrib>Aita, C. R.</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Hoppe, E. E.</au><au>Sorbello, R. S.</au><au>Aita, C. R.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Near-edge optical absorption behavior of sputter deposited hafnium dioxide</atitle><jtitle>Journal of applied physics</jtitle><date>2007-06-15</date><risdate>2007</risdate><volume>101</volume><issue>12</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><abstract>The absorption behavior at the onset of the ultraviolet optical edge of sputter deposited hafnium dioxide is reported. X-ray diffraction showed that films grown at room temperature on fused silica were nanocrystalline monoclinic, and that after air annealing at 1273 K for 24 h, they were well-crystallized monoclinic with a strong (11–1) texture. Spectrophotometry was used to measure transmission and reflection in the 190–1100 nm wavelength range. The absorption coefficient, α(E), as a function of energy, E, was determined from spectrophotometric data. Two persistent features were identified. Feature I is the rapid rise in α(E) above 6.24 eV that is unchanged upon annealing. A linear α(E)1/2 vs E dependence associates this feature with indirect interband transitions. Feature II initiates at ∼5.65 eV and saturates at 5.94 eV. It appears as a low energy shoulder on the absorption edge of the as-grown films and develops into a discrete and more intense band in the annealed films, in which the coordination of Hf with seven O is satisfied. Its annealing behavior explicitly shows that feature II is not caused by an O defect, but is intrinsic to monoclinic HfO2.</abstract><cop>United States</cop><doi>10.1063/1.2750406</doi></addata></record> |
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subjects | ABSORPTION ANNEALING CRYSTAL DEFECTS DEPOSITION DIELECTRIC MATERIALS ENERGY DEPENDENCE ENERGY-LEVEL TRANSITIONS EV RANGE 01-10 HAFNIUM OXIDES MATERIALS SCIENCE MONOCLINIC LATTICES NANOSTRUCTURES SILICA SPECTROPHOTOMETRY TEMPERATURE DEPENDENCE TEMPERATURE RANGE 0273-0400 K TEMPERATURE RANGE 1000-4000 K TEXTURE TIME DEPENDENCE ULTRAVIOLET SPECTRA X-RAY DIFFRACTION |
title | Near-edge optical absorption behavior of sputter deposited hafnium dioxide |
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