Near-edge optical absorption behavior of sputter deposited hafnium dioxide

The absorption behavior at the onset of the ultraviolet optical edge of sputter deposited hafnium dioxide is reported. X-ray diffraction showed that films grown at room temperature on fused silica were nanocrystalline monoclinic, and that after air annealing at 1273 K for 24 h, they were well-crysta...

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Veröffentlicht in:Journal of applied physics 2007-06, Vol.101 (12)
Hauptverfasser: Hoppe, E. E., Sorbello, R. S., Aita, C. R.
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Sorbello, R. S.
Aita, C. R.
description The absorption behavior at the onset of the ultraviolet optical edge of sputter deposited hafnium dioxide is reported. X-ray diffraction showed that films grown at room temperature on fused silica were nanocrystalline monoclinic, and that after air annealing at 1273 K for 24 h, they were well-crystallized monoclinic with a strong (11–1) texture. Spectrophotometry was used to measure transmission and reflection in the 190–1100 nm wavelength range. The absorption coefficient, α(E), as a function of energy, E, was determined from spectrophotometric data. Two persistent features were identified. Feature I is the rapid rise in α(E) above 6.24 eV that is unchanged upon annealing. A linear α(E)1/2 vs E dependence associates this feature with indirect interband transitions. Feature II initiates at ∼5.65 eV and saturates at 5.94 eV. It appears as a low energy shoulder on the absorption edge of the as-grown films and develops into a discrete and more intense band in the annealed films, in which the coordination of Hf with seven O is satisfied. Its annealing behavior explicitly shows that feature II is not caused by an O defect, but is intrinsic to monoclinic HfO2.
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X-ray diffraction showed that films grown at room temperature on fused silica were nanocrystalline monoclinic, and that after air annealing at 1273 K for 24 h, they were well-crystallized monoclinic with a strong (11–1) texture. Spectrophotometry was used to measure transmission and reflection in the 190–1100 nm wavelength range. The absorption coefficient, α(E), as a function of energy, E, was determined from spectrophotometric data. Two persistent features were identified. Feature I is the rapid rise in α(E) above 6.24 eV that is unchanged upon annealing. A linear α(E)1/2 vs E dependence associates this feature with indirect interband transitions. Feature II initiates at ∼5.65 eV and saturates at 5.94 eV. It appears as a low energy shoulder on the absorption edge of the as-grown films and develops into a discrete and more intense band in the annealed films, in which the coordination of Hf with seven O is satisfied. Its annealing behavior explicitly shows that feature II is not caused by an O defect, but is intrinsic to monoclinic HfO2.</abstract><cop>United States</cop><doi>10.1063/1.2750406</doi></addata></record>
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subjects ABSORPTION
ANNEALING
CRYSTAL DEFECTS
DEPOSITION
DIELECTRIC MATERIALS
ENERGY DEPENDENCE
ENERGY-LEVEL TRANSITIONS
EV RANGE 01-10
HAFNIUM OXIDES
MATERIALS SCIENCE
MONOCLINIC LATTICES
NANOSTRUCTURES
SILICA
SPECTROPHOTOMETRY
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0273-0400 K
TEMPERATURE RANGE 1000-4000 K
TEXTURE
TIME DEPENDENCE
ULTRAVIOLET SPECTRA
X-RAY DIFFRACTION
title Near-edge optical absorption behavior of sputter deposited hafnium dioxide
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