Ultrathin amorphous Si layer formation by femtosecond laser pulse irradiation

Formation of ultrathin amorphized Si layer by femtosecond laser irradiation is reported in this letter. Below the fluence of ablation threshold, femtosecond laser irradiation induced an amorphization of crystalline Si. The authors confirmed the thickness of amorphous Si layer by transmission electro...

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Veröffentlicht in:	Applied physics letters 2007-01, Vol.90 (4), p.044107-044107-2
Hauptverfasser:	Izawa, Yusaku, Izawa, Yasukazu, Setsuhara, Yuichi, Hashida, Masaki, Fujita, Masayuki, Sasaki, Ryuichiro, Nagai, Hiroyuki, Yoshida, Makoto
Format:	Artikel
Sprache:	eng
Schlagworte:	ABLATION AMORPHOUS STATE LASER RADIATION LASERS LAYERS MATERIALS SCIENCE PENETRATION DEPTH PULSED IRRADIATION PULSES SEMICONDUCTOR MATERIALS SILICON THICKNESS THIN FILMS TRANSMISSION ELECTRON MICROSCOPY
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