Ultraviolet-enhanced device properties in pentacene-based thin-film transistors
The authors report on the ultraviolet (UV)-enhanced device properties in pentacene-based thin-film transistors (TFTs). Pentacene TFTs showed a degraded mobility and lowered saturation current after illumination by a high energy UV with 254 nm wavelength. However, under 364 nm UV these devices surpri...
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| Veröffentlicht in: | Applied physics letters 2007-03, Vol.90 (11), p.113515-113515-3 |
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| container_end_page | 113515-3 |
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| container_issue | 11 |
| container_start_page | 113515 |
| container_title | Applied physics letters |
| container_volume | 90 |
| creator | Choi, Jeong-M. Hwang, D. K. Hwang, Jung Min Kim, Jae Hoon Im, Seongil |
| description | The authors report on the ultraviolet (UV)-enhanced device properties in pentacene-based thin-film transistors (TFTs). Pentacene TFTs showed a degraded mobility and lowered saturation current after illumination by a high energy UV with
254
nm
wavelength. However, under
364
nm
UV these devices surprisingly displayed enhanced saturation current and also showed threshold voltage shift toward lower values, maintaining their mobilities. The saturation current increase and threshold voltage shift were further related to the negative fixed charges excessively formed at the pentacene/dielectric interface by the low energy UV. The authors thus conclude that a low energy UV could rather enhance the pentacene TFT performances and also control the threshold voltage of the device. |
| doi_str_mv | 10.1063/1.2715033 |
| format | Article |
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254
nm
wavelength. However, under
364
nm
UV these devices surprisingly displayed enhanced saturation current and also showed threshold voltage shift toward lower values, maintaining their mobilities. The saturation current increase and threshold voltage shift were further related to the negative fixed charges excessively formed at the pentacene/dielectric interface by the low energy UV. The authors thus conclude that a low energy UV could rather enhance the pentacene TFT performances and also control the threshold voltage of the device.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.2715033</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>United States: American Institute of Physics</publisher><subject>CARRIER MOBILITY ; CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ; DIELECTRIC MATERIALS ; ELECTRIC POTENTIAL ; ORGANIC SEMICONDUCTORS ; PENTACENE ; THIN FILMS ; TRANSISTORS ; ULTRAVIOLET RADIATION</subject><ispartof>Applied physics letters, 2007-03, Vol.90 (11), p.113515-113515-3</ispartof><rights>2007 American Institute of Physics</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c413t-c1610e70cd28e02a32121e92df461d84f1ce50b611f73d051270165b50bd31ee3</citedby><cites>FETCH-LOGICAL-c413t-c1610e70cd28e02a32121e92df461d84f1ce50b611f73d051270165b50bd31ee3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.2715033$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>230,314,778,782,792,883,1556,4500,27907,27908,76135,76141</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/20960154$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Choi, Jeong-M.</creatorcontrib><creatorcontrib>Hwang, D. K.</creatorcontrib><creatorcontrib>Hwang, Jung Min</creatorcontrib><creatorcontrib>Kim, Jae Hoon</creatorcontrib><creatorcontrib>Im, Seongil</creatorcontrib><title>Ultraviolet-enhanced device properties in pentacene-based thin-film transistors</title><title>Applied physics letters</title><description>The authors report on the ultraviolet (UV)-enhanced device properties in pentacene-based thin-film transistors (TFTs). Pentacene TFTs showed a degraded mobility and lowered saturation current after illumination by a high energy UV with
254
nm
wavelength. However, under
364
nm
UV these devices surprisingly displayed enhanced saturation current and also showed threshold voltage shift toward lower values, maintaining their mobilities. The saturation current increase and threshold voltage shift were further related to the negative fixed charges excessively formed at the pentacene/dielectric interface by the low energy UV. The authors thus conclude that a low energy UV could rather enhance the pentacene TFT performances and also control the threshold voltage of the device.</description><subject>CARRIER MOBILITY</subject><subject>CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS</subject><subject>DIELECTRIC MATERIALS</subject><subject>ELECTRIC POTENTIAL</subject><subject>ORGANIC SEMICONDUCTORS</subject><subject>PENTACENE</subject><subject>THIN FILMS</subject><subject>TRANSISTORS</subject><subject>ULTRAVIOLET RADIATION</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><recordid>eNp1kE9LAzEQR4MoWKsHv8GCJw_RmWSTbS-CFP9BoRd7DmkySyPb7JKEgt_eLa3gxdPwGx7v8Bi7RXhA0PIRH0SDCqQ8YxOEpuEScXbOJgAguZ4rvGRXOX-NUwkpJ2y17kqy-9B3VDjFrY2OfOVpHxxVQ-oHSiVQrkKsBorFOorENzaPUNmGyNvQ7arREHPIpU_5ml20tst0c7pTtn59-Vy88-Xq7WPxvOSuRlm4Q41ADTgvZgTCSoECaS58W2v0s7pFRwo2GrFtpAeFogHUajP-vEQiOWV3R2-fSzDZhUJu6_oYyRUjYK4BVT1S90fKpT7nRK0ZUtjZ9G0QzKGXQXPqNbJPR_YgsyX08X_4TzTzG03-AOfCciA</recordid><startdate>20070312</startdate><enddate>20070312</enddate><creator>Choi, Jeong-M.</creator><creator>Hwang, D. K.</creator><creator>Hwang, Jung Min</creator><creator>Kim, Jae Hoon</creator><creator>Im, Seongil</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>20070312</creationdate><title>Ultraviolet-enhanced device properties in pentacene-based thin-film transistors</title><author>Choi, Jeong-M. ; Hwang, D. K. ; Hwang, Jung Min ; Kim, Jae Hoon ; Im, Seongil</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c413t-c1610e70cd28e02a32121e92df461d84f1ce50b611f73d051270165b50bd31ee3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2007</creationdate><topic>CARRIER MOBILITY</topic><topic>CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS</topic><topic>DIELECTRIC MATERIALS</topic><topic>ELECTRIC POTENTIAL</topic><topic>ORGANIC SEMICONDUCTORS</topic><topic>PENTACENE</topic><topic>THIN FILMS</topic><topic>TRANSISTORS</topic><topic>ULTRAVIOLET RADIATION</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Choi, Jeong-M.</creatorcontrib><creatorcontrib>Hwang, D. K.</creatorcontrib><creatorcontrib>Hwang, Jung Min</creatorcontrib><creatorcontrib>Kim, Jae Hoon</creatorcontrib><creatorcontrib>Im, Seongil</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Choi, Jeong-M.</au><au>Hwang, D. K.</au><au>Hwang, Jung Min</au><au>Kim, Jae Hoon</au><au>Im, Seongil</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Ultraviolet-enhanced device properties in pentacene-based thin-film transistors</atitle><jtitle>Applied physics letters</jtitle><date>2007-03-12</date><risdate>2007</risdate><volume>90</volume><issue>11</issue><spage>113515</spage><epage>113515-3</epage><pages>113515-113515-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>The authors report on the ultraviolet (UV)-enhanced device properties in pentacene-based thin-film transistors (TFTs). Pentacene TFTs showed a degraded mobility and lowered saturation current after illumination by a high energy UV with
254
nm
wavelength. However, under
364
nm
UV these devices surprisingly displayed enhanced saturation current and also showed threshold voltage shift toward lower values, maintaining their mobilities. The saturation current increase and threshold voltage shift were further related to the negative fixed charges excessively formed at the pentacene/dielectric interface by the low energy UV. The authors thus conclude that a low energy UV could rather enhance the pentacene TFT performances and also control the threshold voltage of the device.</abstract><cop>United States</cop><pub>American Institute of Physics</pub><doi>10.1063/1.2715033</doi><oa>free_for_read</oa></addata></record> |
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| ispartof | Applied physics letters, 2007-03, Vol.90 (11), p.113515-113515-3 |
| issn | 0003-6951 1077-3118 |
| language | eng |
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| source | AIP Journals Complete; AIP Digital Archive |
| subjects | CARRIER MOBILITY CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS DIELECTRIC MATERIALS ELECTRIC POTENTIAL ORGANIC SEMICONDUCTORS PENTACENE THIN FILMS TRANSISTORS ULTRAVIOLET RADIATION |
| title | Ultraviolet-enhanced device properties in pentacene-based thin-film transistors |
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