Ion attachment mass spectrometry of nonequilibrium atmospheric-pressure pulsed remote plasma for SiO{sub 2} etching
An etching process for SiO{sub 2} that employs atmospheric-pressure pulsed remote plasma with a mixture gas (CF{sub 4}/Ar) has been demonstrated. The etch rate increased by increasing the pulse frequency and also increased rapidly with the addition of a small amount of O{sub 2} gas. A SiO{sub 2} etc...
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| Veröffentlicht in: | Journal of applied physics 2006-11, Vol.100 (9) |
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| creator | Iwasaki, Masahiro Ito, Masafumi Uehara, Tsuyoshi Nakamura, Megumi Hori, Masaru Department of Opto-mechatoronics, Faculty of systems Engineering, Wakayama University, 930 Sakaedani, Wakayama, Wakayama 640-8510 Sekisui Chemical Co., Ltd., 32 Wadai, Tsukuba-shi, Ibaraki 300-4292 Canon ANELVA Technix Corporation, 3-51-4 Bubai-cho, Fuchu-shi, Tokyo 183-0033 Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya-shi, Aichi 464-8603 |
| description | An etching process for SiO{sub 2} that employs atmospheric-pressure pulsed remote plasma with a mixture gas (CF{sub 4}/Ar) has been demonstrated. The etch rate increased by increasing the pulse frequency and also increased rapidly with the addition of a small amount of O{sub 2} gas. A SiO{sub 2} etch rate of 400 nm/min was obtained without any bias supplied to the substrate, and more than 8 {mu}m/min was obtained with H{sub 2}O addition. The exhaust gas from the plasma source was investigated using ion attachment mass spectrometry (IAMS). With IAMS, the polymerized species were measured without the generation of fragment ions. The results suggest that HF molecules are generated by H{sub 2}O addition to CF{sub 4} and that the etch rate of SiO{sub 2} depends on the density of HF molecules. |
| doi_str_mv | 10.1063/1.2372736 |
| format | Article |
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The etch rate increased by increasing the pulse frequency and also increased rapidly with the addition of a small amount of O{sub 2} gas. A SiO{sub 2} etch rate of 400 nm/min was obtained without any bias supplied to the substrate, and more than 8 {mu}m/min was obtained with H{sub 2}O addition. The exhaust gas from the plasma source was investigated using ion attachment mass spectrometry (IAMS). With IAMS, the polymerized species were measured without the generation of fragment ions. The results suggest that HF molecules are generated by H{sub 2}O addition to CF{sub 4} and that the etch rate of SiO{sub 2} depends on the density of HF molecules.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.2372736</identifier><language>eng</language><publisher>United States</publisher><subject>70 PLASMA PHYSICS AND FUSION TECHNOLOGY ; ARGON ; ATMOSPHERIC PRESSURE ; CARBON TETRAFLUORIDE ; ETCHING ; MASS SPECTROSCOPY ; PLASMA ; PLASMA DENSITY ; PLASMA DIAGNOSTICS ; POLYMERIZATION ; SILICON OXIDES ; SUBSTRATES ; WATER</subject><ispartof>Journal of applied physics, 2006-11, Vol.100 (9)</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,780,784,885,27923,27924</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/20884795$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Iwasaki, Masahiro</creatorcontrib><creatorcontrib>Ito, Masafumi</creatorcontrib><creatorcontrib>Uehara, Tsuyoshi</creatorcontrib><creatorcontrib>Nakamura, Megumi</creatorcontrib><creatorcontrib>Hori, Masaru</creatorcontrib><creatorcontrib>Department of Opto-mechatoronics, Faculty of systems Engineering, Wakayama University, 930 Sakaedani, Wakayama, Wakayama 640-8510</creatorcontrib><creatorcontrib>Sekisui Chemical Co., Ltd., 32 Wadai, Tsukuba-shi, Ibaraki 300-4292</creatorcontrib><creatorcontrib>Canon ANELVA Technix Corporation, 3-51-4 Bubai-cho, Fuchu-shi, Tokyo 183-0033</creatorcontrib><creatorcontrib>Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya-shi, Aichi 464-8603</creatorcontrib><title>Ion attachment mass spectrometry of nonequilibrium atmospheric-pressure pulsed remote plasma for SiO{sub 2} etching</title><title>Journal of applied physics</title><description>An etching process for SiO{sub 2} that employs atmospheric-pressure pulsed remote plasma with a mixture gas (CF{sub 4}/Ar) has been demonstrated. The etch rate increased by increasing the pulse frequency and also increased rapidly with the addition of a small amount of O{sub 2} gas. A SiO{sub 2} etch rate of 400 nm/min was obtained without any bias supplied to the substrate, and more than 8 {mu}m/min was obtained with H{sub 2}O addition. The exhaust gas from the plasma source was investigated using ion attachment mass spectrometry (IAMS). With IAMS, the polymerized species were measured without the generation of fragment ions. The results suggest that HF molecules are generated by H{sub 2}O addition to CF{sub 4} and that the etch rate of SiO{sub 2} depends on the density of HF molecules.</description><subject>70 PLASMA PHYSICS AND FUSION TECHNOLOGY</subject><subject>ARGON</subject><subject>ATMOSPHERIC PRESSURE</subject><subject>CARBON TETRAFLUORIDE</subject><subject>ETCHING</subject><subject>MASS SPECTROSCOPY</subject><subject>PLASMA</subject><subject>PLASMA DENSITY</subject><subject>PLASMA DIAGNOSTICS</subject><subject>POLYMERIZATION</subject><subject>SILICON OXIDES</subject><subject>SUBSTRATES</subject><subject>WATER</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><recordid>eNqNzr1KBDEUhuEgLji6Ft7BAetZ8-NskloUrSy0X7LxjBOZJGNOUoh4707hBVh9vPAUH2NXgu8E36sbsZNKS632J6wT3NheDwM_ZR3nUvTGanvGzok-OBfCKNsxesoJXK3OTxFTheiIgBb0teSItXxBHiHlhJ8tzOFYQosrj5mWCUvw_VKQqBWEpc2Eb1Aw5rrW7Cg6GHOBl_D8Te0I8gew-imk9y3bjG7Vl397wa4f7l_vHvtMNRzIh4p-8jml9cVBcmNutR3U_9QvdVpSlw</recordid><startdate>20061101</startdate><enddate>20061101</enddate><creator>Iwasaki, Masahiro</creator><creator>Ito, Masafumi</creator><creator>Uehara, Tsuyoshi</creator><creator>Nakamura, Megumi</creator><creator>Hori, Masaru</creator><creator>Department of Opto-mechatoronics, Faculty of systems Engineering, Wakayama University, 930 Sakaedani, Wakayama, Wakayama 640-8510</creator><creator>Sekisui Chemical Co., Ltd., 32 Wadai, Tsukuba-shi, Ibaraki 300-4292</creator><creator>Canon ANELVA Technix Corporation, 3-51-4 Bubai-cho, Fuchu-shi, Tokyo 183-0033</creator><creator>Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya-shi, Aichi 464-8603</creator><scope>OTOTI</scope></search><sort><creationdate>20061101</creationdate><title>Ion attachment mass spectrometry of nonequilibrium atmospheric-pressure pulsed remote plasma for SiO{sub 2} etching</title><author>Iwasaki, Masahiro ; Ito, Masafumi ; Uehara, Tsuyoshi ; Nakamura, Megumi ; Hori, Masaru ; Department of Opto-mechatoronics, Faculty of systems Engineering, Wakayama University, 930 Sakaedani, Wakayama, Wakayama 640-8510 ; Sekisui Chemical Co., Ltd., 32 Wadai, Tsukuba-shi, Ibaraki 300-4292 ; Canon ANELVA Technix Corporation, 3-51-4 Bubai-cho, Fuchu-shi, Tokyo 183-0033 ; Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya-shi, Aichi 464-8603</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-osti_scitechconnect_208847953</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2006</creationdate><topic>70 PLASMA PHYSICS AND FUSION TECHNOLOGY</topic><topic>ARGON</topic><topic>ATMOSPHERIC PRESSURE</topic><topic>CARBON TETRAFLUORIDE</topic><topic>ETCHING</topic><topic>MASS SPECTROSCOPY</topic><topic>PLASMA</topic><topic>PLASMA DENSITY</topic><topic>PLASMA DIAGNOSTICS</topic><topic>POLYMERIZATION</topic><topic>SILICON OXIDES</topic><topic>SUBSTRATES</topic><topic>WATER</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Iwasaki, Masahiro</creatorcontrib><creatorcontrib>Ito, Masafumi</creatorcontrib><creatorcontrib>Uehara, Tsuyoshi</creatorcontrib><creatorcontrib>Nakamura, Megumi</creatorcontrib><creatorcontrib>Hori, Masaru</creatorcontrib><creatorcontrib>Department of Opto-mechatoronics, Faculty of systems Engineering, Wakayama University, 930 Sakaedani, Wakayama, Wakayama 640-8510</creatorcontrib><creatorcontrib>Sekisui Chemical Co., Ltd., 32 Wadai, Tsukuba-shi, Ibaraki 300-4292</creatorcontrib><creatorcontrib>Canon ANELVA Technix Corporation, 3-51-4 Bubai-cho, Fuchu-shi, Tokyo 183-0033</creatorcontrib><creatorcontrib>Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya-shi, Aichi 464-8603</creatorcontrib><collection>OSTI.GOV</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Iwasaki, Masahiro</au><au>Ito, Masafumi</au><au>Uehara, Tsuyoshi</au><au>Nakamura, Megumi</au><au>Hori, Masaru</au><au>Department of Opto-mechatoronics, Faculty of systems Engineering, Wakayama University, 930 Sakaedani, Wakayama, Wakayama 640-8510</au><au>Sekisui Chemical Co., Ltd., 32 Wadai, Tsukuba-shi, Ibaraki 300-4292</au><au>Canon ANELVA Technix Corporation, 3-51-4 Bubai-cho, Fuchu-shi, Tokyo 183-0033</au><au>Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya-shi, Aichi 464-8603</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Ion attachment mass spectrometry of nonequilibrium atmospheric-pressure pulsed remote plasma for SiO{sub 2} etching</atitle><jtitle>Journal of applied physics</jtitle><date>2006-11-01</date><risdate>2006</risdate><volume>100</volume><issue>9</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><abstract>An etching process for SiO{sub 2} that employs atmospheric-pressure pulsed remote plasma with a mixture gas (CF{sub 4}/Ar) has been demonstrated. The etch rate increased by increasing the pulse frequency and also increased rapidly with the addition of a small amount of O{sub 2} gas. A SiO{sub 2} etch rate of 400 nm/min was obtained without any bias supplied to the substrate, and more than 8 {mu}m/min was obtained with H{sub 2}O addition. The exhaust gas from the plasma source was investigated using ion attachment mass spectrometry (IAMS). With IAMS, the polymerized species were measured without the generation of fragment ions. The results suggest that HF molecules are generated by H{sub 2}O addition to CF{sub 4} and that the etch rate of SiO{sub 2} depends on the density of HF molecules.</abstract><cop>United States</cop><doi>10.1063/1.2372736</doi></addata></record> |
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| subjects | 70 PLASMA PHYSICS AND FUSION TECHNOLOGY ARGON ATMOSPHERIC PRESSURE CARBON TETRAFLUORIDE ETCHING MASS SPECTROSCOPY PLASMA PLASMA DENSITY PLASMA DIAGNOSTICS POLYMERIZATION SILICON OXIDES SUBSTRATES WATER |
| title | Ion attachment mass spectrometry of nonequilibrium atmospheric-pressure pulsed remote plasma for SiO{sub 2} etching |
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