The effect of substrate temperature on the physical properties of tantalum oxide thin films grown by reactive radio-frequency sputtering

Thin films of TaO x were deposited on Si(1 0 0) by radio-frequency magnetron sputtering at substrate temperatures of 25, 100, 200, 300, 400, and 500 °C. The properties of TaO x thin films deposited with different oxygen-to-argon gas ratios and substrate temperatures were evaluated. The results show...

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Veröffentlicht in:	Materials research bulletin 2003-11, Vol.38 (14), p.1841-1849
Hauptverfasser:	Cheng, Hsyi-En, Mao, Chien-Tang
Format:	Artikel
Sprache:	eng
Schlagworte:	A. Oxides A. Thin films AMBIENT TEMPERATURE ARGON B. Sputtering C. X-ray diffraction Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology CRYSTALLIZATION D. Defects Deposition by sputtering ELECTRIC CONDUCTIVITY ELECTRIC POTENTIAL Electrical properties of specific thin films Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Insulators LEAKAGE CURRENT MAGNETRONS MATERIALS SCIENCE Methods of deposition of films and coatings film growth and epitaxy Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity) Optical constants: refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of bulk materials and thin films Physics RADIOWAVE RADIATION SPUTTERING SUBSTRATES TANTALUM OXIDES THIN FILMS X-RAY DIFFRACTION
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