The effect of substrate temperature on the physical properties of tantalum oxide thin films grown by reactive radio-frequency sputtering
Thin films of TaO x were deposited on Si(1 0 0) by radio-frequency magnetron sputtering at substrate temperatures of 25, 100, 200, 300, 400, and 500 °C. The properties of TaO x thin films deposited with different oxygen-to-argon gas ratios and substrate temperatures were evaluated. The results show...
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| Veröffentlicht in: | Materials research bulletin 2003-11, Vol.38 (14), p.1841-1849 |
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| creator | Cheng, Hsyi-En Mao, Chien-Tang |
| description | Thin films of TaO
x
were deposited on Si(1
0
0) by radio-frequency magnetron sputtering at substrate temperatures of 25, 100, 200, 300, 400, and 500
°C. The properties of TaO
x
thin films deposited with different oxygen-to-argon gas ratios and substrate temperatures were evaluated. The results show that the films with lowest leakage current density were obtained at ambient temperature with an oxygen mixture ratio (OMR) of 60% and the oxygen-to-tantalum ratio has a minimum with increasing deposition substrate temperature. From the current–voltage (
I–
V) characteristics of the TaO
x
thin films as a function of deposition substrate temperature, we found that the leakage current density in the TaO
x
thin films increases with increasing deposition substrate temperature. The higher leakage current density in the TaO
x
films is correlated to the oxygen deficiency in TaO
x
films and crystallization at higher deposition temperature. |
| doi_str_mv | 10.1016/j.materresbull.2003.08.003 |
| format | Article |
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x
were deposited on Si(1
0
0) by radio-frequency magnetron sputtering at substrate temperatures of 25, 100, 200, 300, 400, and 500
°C. The properties of TaO
x
thin films deposited with different oxygen-to-argon gas ratios and substrate temperatures were evaluated. The results show that the films with lowest leakage current density were obtained at ambient temperature with an oxygen mixture ratio (OMR) of 60% and the oxygen-to-tantalum ratio has a minimum with increasing deposition substrate temperature. From the current–voltage (
I–
V) characteristics of the TaO
x
thin films as a function of deposition substrate temperature, we found that the leakage current density in the TaO
x
thin films increases with increasing deposition substrate temperature. The higher leakage current density in the TaO
x
films is correlated to the oxygen deficiency in TaO
x
films and crystallization at higher deposition temperature.</description><identifier>ISSN: 0025-5408</identifier><identifier>EISSN: 1873-4227</identifier><identifier>DOI: 10.1016/j.materresbull.2003.08.003</identifier><identifier>CODEN: MRBUAC</identifier><language>eng</language><publisher>London: Elsevier Ltd</publisher><subject>A. Oxides ; A. Thin films ; AMBIENT TEMPERATURE ; ARGON ; B. Sputtering ; C. X-ray diffraction ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Cross-disciplinary physics: materials science; rheology ; CRYSTALLIZATION ; D. Defects ; Deposition by sputtering ; ELECTRIC CONDUCTIVITY ; ELECTRIC POTENTIAL ; Electrical properties of specific thin films ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Exact sciences and technology ; Insulators ; LEAKAGE CURRENT ; MAGNETRONS ; MATERIALS SCIENCE ; Methods of deposition of films and coatings; film growth and epitaxy ; Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity) ; Optical constants: refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Optical properties of bulk materials and thin films ; Physics ; RADIOWAVE RADIATION ; SPUTTERING ; SUBSTRATES ; TANTALUM OXIDES ; THIN FILMS ; X-RAY DIFFRACTION</subject><ispartof>Materials research bulletin, 2003-11, Vol.38 (14), p.1841-1849</ispartof><rights>2003 Elsevier Science Ltd</rights><rights>2004 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c446t-eab0f8727d8b79a9b5dd0ae91594aa698b8a73e05ec857eca3e288fcd0eade073</citedby><cites>FETCH-LOGICAL-c446t-eab0f8727d8b79a9b5dd0ae91594aa698b8a73e05ec857eca3e288fcd0eade073</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.materresbull.2003.08.003$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>230,314,778,782,883,3539,27907,27908,45978</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=15270509$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://www.osti.gov/biblio/20884621$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Cheng, Hsyi-En</creatorcontrib><creatorcontrib>Mao, Chien-Tang</creatorcontrib><title>The effect of substrate temperature on the physical properties of tantalum oxide thin films grown by reactive radio-frequency sputtering</title><title>Materials research bulletin</title><description>Thin films of TaO
x
were deposited on Si(1
0
0) by radio-frequency magnetron sputtering at substrate temperatures of 25, 100, 200, 300, 400, and 500
°C. The properties of TaO
x
thin films deposited with different oxygen-to-argon gas ratios and substrate temperatures were evaluated. The results show that the films with lowest leakage current density were obtained at ambient temperature with an oxygen mixture ratio (OMR) of 60% and the oxygen-to-tantalum ratio has a minimum with increasing deposition substrate temperature. From the current–voltage (
I–
V) characteristics of the TaO
x
thin films as a function of deposition substrate temperature, we found that the leakage current density in the TaO
x
thin films increases with increasing deposition substrate temperature. The higher leakage current density in the TaO
x
films is correlated to the oxygen deficiency in TaO
x
films and crystallization at higher deposition temperature.</description><subject>A. Oxides</subject><subject>A. Thin films</subject><subject>AMBIENT TEMPERATURE</subject><subject>ARGON</subject><subject>B. Sputtering</subject><subject>C. X-ray diffraction</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>CRYSTALLIZATION</subject><subject>D. Defects</subject><subject>Deposition by sputtering</subject><subject>ELECTRIC CONDUCTIVITY</subject><subject>ELECTRIC POTENTIAL</subject><subject>Electrical properties of specific thin films</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Exact sciences and technology</subject><subject>Insulators</subject><subject>LEAKAGE CURRENT</subject><subject>MAGNETRONS</subject><subject>MATERIALS SCIENCE</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)</subject><subject>Optical constants: refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Optical properties of bulk materials and thin films</subject><subject>Physics</subject><subject>RADIOWAVE RADIATION</subject><subject>SPUTTERING</subject><subject>SUBSTRATES</subject><subject>TANTALUM OXIDES</subject><subject>THIN FILMS</subject><subject>X-RAY DIFFRACTION</subject><issn>0025-5408</issn><issn>1873-4227</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2003</creationdate><recordtype>article</recordtype><recordid>eNqNkMFu1DAYhC1EJZbCO1ggjkn_OMna4YYKLZUqcSlny7F_d71K7GA7hX2DPjaOFgmOnMaSZ8bjj5B3DdQNNPurYz2rjDFiGtdpqhlAW4Ooi7wgu0bwtuoY4y_JDoD1Vd-BeEVep3QEgE5wviPPDwekaC3qTIOlaR1TjqWSZpwXLKc1Ig2e5mJbDqfktJroEkO5yw7TlsnKZzWtMw2_nCnBg_PUumlO9DGGn56OJxpR6eyekEZlXKhsxB8ren2iaVlz2e_84xtyYdWU8O0fvSTfb748XH-t7r_d3l1_uq901-1zhWoEKzjjRox8UMPYGwMKh6YfOqX2gxiF4i1Cj1r0HLVqkQlhtQFUBoG3l-T9uTek7GTSLqM-6OB9ISAZCNHtWVNcH88uHUNKEa1coptVPMkG5EZeHuW_5OVGXoKQRUr4wzm8qFRw2ai8dulvQ8849DAU3-ezD8t_nxzGbU7BgsbFbY0J7n-e-w2KdqWS</recordid><startdate>20031126</startdate><enddate>20031126</enddate><creator>Cheng, Hsyi-En</creator><creator>Mao, Chien-Tang</creator><general>Elsevier Ltd</general><general>Elsevier Science</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>20031126</creationdate><title>The effect of substrate temperature on the physical properties of tantalum oxide thin films grown by reactive radio-frequency sputtering</title><author>Cheng, Hsyi-En ; Mao, Chien-Tang</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c446t-eab0f8727d8b79a9b5dd0ae91594aa698b8a73e05ec857eca3e288fcd0eade073</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2003</creationdate><topic>A. Oxides</topic><topic>A. Thin films</topic><topic>AMBIENT TEMPERATURE</topic><topic>ARGON</topic><topic>B. Sputtering</topic><topic>C. X-ray diffraction</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>CRYSTALLIZATION</topic><topic>D. Defects</topic><topic>Deposition by sputtering</topic><topic>ELECTRIC CONDUCTIVITY</topic><topic>ELECTRIC POTENTIAL</topic><topic>Electrical properties of specific thin films</topic><topic>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</topic><topic>Exact sciences and technology</topic><topic>Insulators</topic><topic>LEAKAGE CURRENT</topic><topic>MAGNETRONS</topic><topic>MATERIALS SCIENCE</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)</topic><topic>Optical constants: refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity</topic><topic>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</topic><topic>Optical properties of bulk materials and thin films</topic><topic>Physics</topic><topic>RADIOWAVE RADIATION</topic><topic>SPUTTERING</topic><topic>SUBSTRATES</topic><topic>TANTALUM OXIDES</topic><topic>THIN FILMS</topic><topic>X-RAY DIFFRACTION</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Cheng, Hsyi-En</creatorcontrib><creatorcontrib>Mao, Chien-Tang</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Materials research bulletin</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Cheng, Hsyi-En</au><au>Mao, Chien-Tang</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The effect of substrate temperature on the physical properties of tantalum oxide thin films grown by reactive radio-frequency sputtering</atitle><jtitle>Materials research bulletin</jtitle><date>2003-11-26</date><risdate>2003</risdate><volume>38</volume><issue>14</issue><spage>1841</spage><epage>1849</epage><pages>1841-1849</pages><issn>0025-5408</issn><eissn>1873-4227</eissn><coden>MRBUAC</coden><abstract>Thin films of TaO
x
were deposited on Si(1
0
0) by radio-frequency magnetron sputtering at substrate temperatures of 25, 100, 200, 300, 400, and 500
°C. The properties of TaO
x
thin films deposited with different oxygen-to-argon gas ratios and substrate temperatures were evaluated. The results show that the films with lowest leakage current density were obtained at ambient temperature with an oxygen mixture ratio (OMR) of 60% and the oxygen-to-tantalum ratio has a minimum with increasing deposition substrate temperature. From the current–voltage (
I–
V) characteristics of the TaO
x
thin films as a function of deposition substrate temperature, we found that the leakage current density in the TaO
x
thin films increases with increasing deposition substrate temperature. The higher leakage current density in the TaO
x
films is correlated to the oxygen deficiency in TaO
x
films and crystallization at higher deposition temperature.</abstract><cop>London</cop><cop>Amsterdam</cop><pub>Elsevier Ltd</pub><doi>10.1016/j.materresbull.2003.08.003</doi><tpages>9</tpages></addata></record> |
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| ispartof | Materials research bulletin, 2003-11, Vol.38 (14), p.1841-1849 |
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| language | eng |
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| source | Elsevier ScienceDirect Journals Complete - AutoHoldings |
| subjects | A. Oxides A. Thin films AMBIENT TEMPERATURE ARGON B. Sputtering C. X-ray diffraction Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology CRYSTALLIZATION D. Defects Deposition by sputtering ELECTRIC CONDUCTIVITY ELECTRIC POTENTIAL Electrical properties of specific thin films Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Insulators LEAKAGE CURRENT MAGNETRONS MATERIALS SCIENCE Methods of deposition of films and coatings film growth and epitaxy Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity) Optical constants: refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of bulk materials and thin films Physics RADIOWAVE RADIATION SPUTTERING SUBSTRATES TANTALUM OXIDES THIN FILMS X-RAY DIFFRACTION |
| title | The effect of substrate temperature on the physical properties of tantalum oxide thin films grown by reactive radio-frequency sputtering |
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