High bandwidth Ge p - i - n photodetector integrated on Si

The authors present a germanium on silicon p - i - n photodiode for vertical light incidence. For a Ge p - i - n photodetector with a radius of 5 μ m a 3 dB bandwidth of 25 GHz is measured at an incident wavelength of 1.55 μ m and zero external bias. For a modest reverse bias of 2 V , the 3 dB bandw...

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Veröffentlicht in:	Applied physics letters 2006-08, Vol.89 (7), p.071117-071117-3
Hauptverfasser:	Oehme, M., Werner, J., Kasper, E., Jutzi, M., Berroth, M.
Format:	Artikel
Sprache:	eng
Schlagworte:	ABSORPTION CRYSTAL GROWTH DOPED MATERIALS GE SEMICONDUCTOR DETECTORS GERMANIUM GHZ RANGE 01-100 LAYERS MATERIALS SCIENCE MOLECULAR BEAM EPITAXY PHOTODETECTORS PHOTODIODES SEMICONDUCTOR MATERIALS SILICON THICKNESS VISIBLE RADIATION
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