Very short wavelength ( λ = 3.1 - 3.3 μ m ) quantum cascade lasers
Quantum cascade lasers emitting at wavelengths as short as 3.1 - 3.3 μ m are reported. Such high intersubband emission energies (up to 400 meV ) have been obtained thanks to the high conduction band offset of the In As ∕ Al Sb material system. The structures, grown by molecular beam epitaxy on InAs...
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| Veröffentlicht in: | Applied physics letters 2006-11, Vol.89 (19), p.191115-191115-3 |
|---|---|
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | Quantum cascade lasers emitting at wavelengths as short as
3.1
-
3.3
μ
m
are reported. Such high intersubband emission energies (up to
400
meV
) have been obtained thanks to the high conduction band offset of the
In
As
∕
Al
Sb
material system. The structures, grown by molecular beam epitaxy on InAs substrates, are based on the bound-to-continuum design and use a low loss plasmon enhanced waveguide consisting of
n
+
-
In
As
cladding layers with
In
As
∕
Al
Sb
superlattice spacers surrounding the active zone. The lasers exhibit threshold current densities close to
3
kA
∕
cm
2
at
83
K
and operate in pulsed mode up to
240
K
. |
|---|---|
| ISSN: | 0003-6951 1077-3118 |
| DOI: | 10.1063/1.2387473 |