Band offsets and chemical bonding states in N-plasma-treated HfSiON gate stacks studied by photoelectron spectroscopy and x-ray absorption spectroscopy

We have investigated valence band and conduction band electronic structures and interfacial chemical bonding states of nitrogen-plasma-treated HfSiON∕SiON gate stacks on Si substrates with and without rapid thermal annealing by photoelectron spectroscopy and x-ray absorption spectroscopy to correlat...

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Veröffentlicht in:	Journal of applied physics 2006-08, Vol.100 (3)
Hauptverfasser:	Oshima, M., Takahashi, H., Okabayashi, J., Toyoda, S., Kumigashira, H., Inoue, M., Mizutani, M., Yugami, J.
Format:	Artikel
Sprache:	eng
Schlagworte:	ABSORPTION SPECTRA ABSORPTION SPECTROSCOPY ANNEALING CHEMICAL BONDS ELECTRICAL PROPERTIES ELECTRONIC STRUCTURE ELECTRONS INTERFACES MATERIALS SCIENCE NITROGEN PHOTOELECTRON SPECTROSCOPY PLASMA SILICON OXIDES SUBSTRATES THIN FILMS X-RAY SPECTRA X-RAY SPECTROSCOPY
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