Metal precipitation at grain boundaries in silicon: Dependence on grain boundary character and dislocation decoration

Synchrotron-based analytical microprobe techniques, electron backscatter diffraction, and defect etching are combined to determine the dependence of metal silicide precipitate formation on grain boundary character and microstructure in multicrystalline silicon (mc-Si). Metal silicide precipitate dec...

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Veröffentlicht in:	Applied physics letters 2006-07, Vol.89 (4), p.042102-042102-3
Hauptverfasser:	Buonassisi, T., Istratov, A. A., Pickett, M. D., Marcus, M. A., Ciszek, T. F., Weber, E. R.
Format:	Artikel
Sprache:	eng
Schlagworte:	BACKSCATTERING COPPER DISLOCATIONS ELECTRON DIFFRACTION ETCHING GRAIN BOUNDARIES MATERIALS SCIENCE NICKEL PRECIPITATION SEMICONDUCTOR MATERIALS SILICIDES SILICON
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