Metal precipitation at grain boundaries in silicon: Dependence on grain boundary character and dislocation decoration
Synchrotron-based analytical microprobe techniques, electron backscatter diffraction, and defect etching are combined to determine the dependence of metal silicide precipitate formation on grain boundary character and microstructure in multicrystalline silicon (mc-Si). Metal silicide precipitate dec...
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| Veröffentlicht in: | Applied physics letters 2006-07, Vol.89 (4), p.042102-042102-3 |
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| container_end_page | 042102-3 |
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| container_issue | 4 |
| container_start_page | 042102 |
| container_title | Applied physics letters |
| container_volume | 89 |
| creator | Buonassisi, T. Istratov, A. A. Pickett, M. D. Marcus, M. A. Ciszek, T. F. Weber, E. R. |
| description | Synchrotron-based analytical microprobe techniques, electron backscatter diffraction, and defect etching are combined to determine the dependence of metal silicide precipitate formation on grain boundary character and microstructure in multicrystalline silicon (mc-Si). Metal silicide precipitate decoration is observed to increase with decreasing atomic coincidence within the grain boundary plane (increasing
Σ
values). A few low-
Σ
boundaries contain anomalously high metal precipitate concentrations, concomitant with heavy dislocation decoration. These results provide direct experimental evidence that the degree of interaction between metals and structural defects in mc-Si can vary as a function of microstructure, with implications for mc-Si device performance and processing. |
| doi_str_mv | 10.1063/1.2234570 |
| format | Article |
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Σ
values). A few low-
Σ
boundaries contain anomalously high metal precipitate concentrations, concomitant with heavy dislocation decoration. These results provide direct experimental evidence that the degree of interaction between metals and structural defects in mc-Si can vary as a function of microstructure, with implications for mc-Si device performance and processing.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.2234570</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>United States: American Institute of Physics</publisher><subject>BACKSCATTERING ; COPPER ; DISLOCATIONS ; ELECTRON DIFFRACTION ; ETCHING ; GRAIN BOUNDARIES ; MATERIALS SCIENCE ; NICKEL ; PRECIPITATION ; SEMICONDUCTOR MATERIALS ; SILICIDES ; SILICON</subject><ispartof>Applied physics letters, 2006-07, Vol.89 (4), p.042102-042102-3</ispartof><rights>2006 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c377t-4d3456d4e0b622c610ae4502ae435be4ebf2c51b34c546371a4855c2c2abc63d3</citedby><cites>FETCH-LOGICAL-c377t-4d3456d4e0b622c610ae4502ae435be4ebf2c51b34c546371a4855c2c2abc63d3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.2234570$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>230,314,780,784,794,885,1559,4512,27924,27925,76384,76390</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/20860599$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Buonassisi, T.</creatorcontrib><creatorcontrib>Istratov, A. A.</creatorcontrib><creatorcontrib>Pickett, M. D.</creatorcontrib><creatorcontrib>Marcus, M. A.</creatorcontrib><creatorcontrib>Ciszek, T. F.</creatorcontrib><creatorcontrib>Weber, E. R.</creatorcontrib><title>Metal precipitation at grain boundaries in silicon: Dependence on grain boundary character and dislocation decoration</title><title>Applied physics letters</title><description>Synchrotron-based analytical microprobe techniques, electron backscatter diffraction, and defect etching are combined to determine the dependence of metal silicide precipitate formation on grain boundary character and microstructure in multicrystalline silicon (mc-Si). Metal silicide precipitate decoration is observed to increase with decreasing atomic coincidence within the grain boundary plane (increasing
Σ
values). A few low-
Σ
boundaries contain anomalously high metal precipitate concentrations, concomitant with heavy dislocation decoration. These results provide direct experimental evidence that the degree of interaction between metals and structural defects in mc-Si can vary as a function of microstructure, with implications for mc-Si device performance and processing.</description><subject>BACKSCATTERING</subject><subject>COPPER</subject><subject>DISLOCATIONS</subject><subject>ELECTRON DIFFRACTION</subject><subject>ETCHING</subject><subject>GRAIN BOUNDARIES</subject><subject>MATERIALS SCIENCE</subject><subject>NICKEL</subject><subject>PRECIPITATION</subject><subject>SEMICONDUCTOR MATERIALS</subject><subject>SILICIDES</subject><subject>SILICON</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><recordid>eNp1kMtKAzEUhoMoWKsL3yDgysXU3KcVXEi9QsWNrkPm5NRG6syQpAvf3rTTTRduzgU-fvh-Qi45m3Bm5A2fCCGVrtkRGXFW15XkfHpMRowxWZmZ5qfkLKXv8moh5Yhs3jC7Ne0jQuhDdjl0LXWZfkUXWtp0m9a7GDDR8qWwDtC1t_QBe2w9toC00AfoL4WViw4yRupaT31I6w6GWI_Qxd15Tk6Wbp3wYr_H5PPp8WP-Ui3en1_n94sKZF3nSvmiYrxC1hghwHDmUGkmypS6QYXNUoDmjVSglZE1d2qqNQgQrgEjvRyTqyG3SznYBCEjrIpCi5CtYFPD9GxWqOuBgtilFHFp-xh-iovlzG5btdzuWy3s3cBuw3Yu_8O7au1BtfIPQFuALw</recordid><startdate>20060724</startdate><enddate>20060724</enddate><creator>Buonassisi, T.</creator><creator>Istratov, A. A.</creator><creator>Pickett, M. D.</creator><creator>Marcus, M. A.</creator><creator>Ciszek, T. F.</creator><creator>Weber, E. R.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>20060724</creationdate><title>Metal precipitation at grain boundaries in silicon: Dependence on grain boundary character and dislocation decoration</title><author>Buonassisi, T. ; Istratov, A. A. ; Pickett, M. D. ; Marcus, M. A. ; Ciszek, T. F. ; Weber, E. R.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c377t-4d3456d4e0b622c610ae4502ae435be4ebf2c51b34c546371a4855c2c2abc63d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2006</creationdate><topic>BACKSCATTERING</topic><topic>COPPER</topic><topic>DISLOCATIONS</topic><topic>ELECTRON DIFFRACTION</topic><topic>ETCHING</topic><topic>GRAIN BOUNDARIES</topic><topic>MATERIALS SCIENCE</topic><topic>NICKEL</topic><topic>PRECIPITATION</topic><topic>SEMICONDUCTOR MATERIALS</topic><topic>SILICIDES</topic><topic>SILICON</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Buonassisi, T.</creatorcontrib><creatorcontrib>Istratov, A. A.</creatorcontrib><creatorcontrib>Pickett, M. D.</creatorcontrib><creatorcontrib>Marcus, M. A.</creatorcontrib><creatorcontrib>Ciszek, T. F.</creatorcontrib><creatorcontrib>Weber, E. R.</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Buonassisi, T.</au><au>Istratov, A. A.</au><au>Pickett, M. D.</au><au>Marcus, M. A.</au><au>Ciszek, T. F.</au><au>Weber, E. R.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Metal precipitation at grain boundaries in silicon: Dependence on grain boundary character and dislocation decoration</atitle><jtitle>Applied physics letters</jtitle><date>2006-07-24</date><risdate>2006</risdate><volume>89</volume><issue>4</issue><spage>042102</spage><epage>042102-3</epage><pages>042102-042102-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Synchrotron-based analytical microprobe techniques, electron backscatter diffraction, and defect etching are combined to determine the dependence of metal silicide precipitate formation on grain boundary character and microstructure in multicrystalline silicon (mc-Si). Metal silicide precipitate decoration is observed to increase with decreasing atomic coincidence within the grain boundary plane (increasing
Σ
values). A few low-
Σ
boundaries contain anomalously high metal precipitate concentrations, concomitant with heavy dislocation decoration. These results provide direct experimental evidence that the degree of interaction between metals and structural defects in mc-Si can vary as a function of microstructure, with implications for mc-Si device performance and processing.</abstract><cop>United States</cop><pub>American Institute of Physics</pub><doi>10.1063/1.2234570</doi></addata></record> |
| fulltext | fulltext |
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| ispartof | Applied physics letters, 2006-07, Vol.89 (4), p.042102-042102-3 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_osti_scitechconnect_20860599 |
| source | AIP Journals Complete; AIP Digital Archive |
| subjects | BACKSCATTERING COPPER DISLOCATIONS ELECTRON DIFFRACTION ETCHING GRAIN BOUNDARIES MATERIALS SCIENCE NICKEL PRECIPITATION SEMICONDUCTOR MATERIALS SILICIDES SILICON |
| title | Metal precipitation at grain boundaries in silicon: Dependence on grain boundary character and dislocation decoration |
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