Charge deep-level transient spectroscopy study of high-energy-electron-beam-irradiated hydrogenated amorphous silicon
We present a study of changes in the defect density of states in hydrogenated amorphous silicon ( a - Si : H ) due to high-energy electron irradiation using charged deep-level transient spectroscopy. It was found that defect states near the conduction band were removed, while in other band gap regio...
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| Veröffentlicht in: | Applied physics letters 2006-07, Vol.89 (2), p.022119-022119-3 |
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| container_end_page | 022119-3 |
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| container_issue | 2 |
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| container_title | Applied physics letters |
| container_volume | 89 |
| creator | Klaver, A. Nádaždy, V. Zeman, M. van Swaaij, R. A. C. M. M. |
| description | We present a study of changes in the defect density of states in hydrogenated amorphous silicon
(
a
-
Si
:
H
)
due to high-energy electron irradiation using charged deep-level transient spectroscopy. It was found that defect states near the conduction band were removed, while in other band gap regions the defect-state density increased. A similar trend is observed for
a
-
Si
:
H
which has been subjected to light soaking, but in that case the majority of defect states are created around midgap, whereas with electron-beam degradation more defect states are created near the valence-band tail. |
| doi_str_mv | 10.1063/1.2221876 |
| format | Article |
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(
a
-
Si
:
H
)
due to high-energy electron irradiation using charged deep-level transient spectroscopy. It was found that defect states near the conduction band were removed, while in other band gap regions the defect-state density increased. A similar trend is observed for
a
-
Si
:
H
which has been subjected to light soaking, but in that case the majority of defect states are created around midgap, whereas with electron-beam degradation more defect states are created near the valence-band tail.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.2221876</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>United States: American Institute of Physics</publisher><subject>CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ; DEEP LEVEL TRANSIENT SPECTROSCOPY ; ELECTRON BEAMS ; HYDROGEN ; HYDROGENATION ; IRRADIATION ; MATERIALS SCIENCE ; SEMICONDUCTOR MATERIALS ; SILICON</subject><ispartof>Applied physics letters, 2006-07, Vol.89 (2), p.022119-022119-3</ispartof><rights>2006 American Institute of Physics</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c347t-6856786c87f022ad318a2aa1f0caf991d98f4735dcb8442073dc0f02451679213</citedby><cites>FETCH-LOGICAL-c347t-6856786c87f022ad318a2aa1f0caf991d98f4735dcb8442073dc0f02451679213</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.2221876$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>230,314,777,781,791,882,1554,4498,27905,27906,76133,76139</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/20860553$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Klaver, A.</creatorcontrib><creatorcontrib>Nádaždy, V.</creatorcontrib><creatorcontrib>Zeman, M.</creatorcontrib><creatorcontrib>van Swaaij, R. A. C. M. M.</creatorcontrib><title>Charge deep-level transient spectroscopy study of high-energy-electron-beam-irradiated hydrogenated amorphous silicon</title><title>Applied physics letters</title><description>We present a study of changes in the defect density of states in hydrogenated amorphous silicon
(
a
-
Si
:
H
)
due to high-energy electron irradiation using charged deep-level transient spectroscopy. It was found that defect states near the conduction band were removed, while in other band gap regions the defect-state density increased. A similar trend is observed for
a
-
Si
:
H
which has been subjected to light soaking, but in that case the majority of defect states are created around midgap, whereas with electron-beam degradation more defect states are created near the valence-band tail.</description><subject>CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS</subject><subject>DEEP LEVEL TRANSIENT SPECTROSCOPY</subject><subject>ELECTRON BEAMS</subject><subject>HYDROGEN</subject><subject>HYDROGENATION</subject><subject>IRRADIATION</subject><subject>MATERIALS SCIENCE</subject><subject>SEMICONDUCTOR MATERIALS</subject><subject>SILICON</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><recordid>eNp1kE1LAzEURYMoWKsL_0HAlYvUfMwkmY0gxS8ouNF1SJPMTGSaDEkqzL932rp19bhwuO-9A8AtwSuCOXsgK0opkYKfgQXBQiBGiDwHC4wxQ7ypySW4yvl7jjVlbAH2616nzkHr3IgG9-MGWJIO2btQYB6dKSlmE8cJ5rK3E4wt7H3XIxdc6ibkhiMR0NbpHfIpaet1cRb2k02xc-EY9C6msY_7DLMfvInhGly0esju5m8uwdfL8-f6DW0-Xt_XTxtkWCUK4rLmQnIjRYsp1ZYRqanWpMVGt01DbCPbSrDamq2sKooFswbPaFUTLhpK2BLcnXpjLl5l44sz_bw_zFcriiXHdc1m6v5EmfnXnFyrxuR3Ok2KYHWwqoj6szqzjyf2UKaLj-F_-KRWHdSqo1pVEvsFaa-Amg</recordid><startdate>20060710</startdate><enddate>20060710</enddate><creator>Klaver, A.</creator><creator>Nádaždy, V.</creator><creator>Zeman, M.</creator><creator>van Swaaij, R. A. C. M. M.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>20060710</creationdate><title>Charge deep-level transient spectroscopy study of high-energy-electron-beam-irradiated hydrogenated amorphous silicon</title><author>Klaver, A. ; Nádaždy, V. ; Zeman, M. ; van Swaaij, R. A. C. M. M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c347t-6856786c87f022ad318a2aa1f0caf991d98f4735dcb8442073dc0f02451679213</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2006</creationdate><topic>CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS</topic><topic>DEEP LEVEL TRANSIENT SPECTROSCOPY</topic><topic>ELECTRON BEAMS</topic><topic>HYDROGEN</topic><topic>HYDROGENATION</topic><topic>IRRADIATION</topic><topic>MATERIALS SCIENCE</topic><topic>SEMICONDUCTOR MATERIALS</topic><topic>SILICON</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Klaver, A.</creatorcontrib><creatorcontrib>Nádaždy, V.</creatorcontrib><creatorcontrib>Zeman, M.</creatorcontrib><creatorcontrib>van Swaaij, R. A. C. M. M.</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Klaver, A.</au><au>Nádaždy, V.</au><au>Zeman, M.</au><au>van Swaaij, R. A. C. M. M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Charge deep-level transient spectroscopy study of high-energy-electron-beam-irradiated hydrogenated amorphous silicon</atitle><jtitle>Applied physics letters</jtitle><date>2006-07-10</date><risdate>2006</risdate><volume>89</volume><issue>2</issue><spage>022119</spage><epage>022119-3</epage><pages>022119-022119-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>We present a study of changes in the defect density of states in hydrogenated amorphous silicon
(
a
-
Si
:
H
)
due to high-energy electron irradiation using charged deep-level transient spectroscopy. It was found that defect states near the conduction band were removed, while in other band gap regions the defect-state density increased. A similar trend is observed for
a
-
Si
:
H
which has been subjected to light soaking, but in that case the majority of defect states are created around midgap, whereas with electron-beam degradation more defect states are created near the valence-band tail.</abstract><cop>United States</cop><pub>American Institute of Physics</pub><doi>10.1063/1.2221876</doi><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2006-07, Vol.89 (2), p.022119-022119-3 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_osti_scitechconnect_20860553 |
| source | AIP Journals Complete; AIP Digital Archive |
| subjects | CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS DEEP LEVEL TRANSIENT SPECTROSCOPY ELECTRON BEAMS HYDROGEN HYDROGENATION IRRADIATION MATERIALS SCIENCE SEMICONDUCTOR MATERIALS SILICON |
| title | Charge deep-level transient spectroscopy study of high-energy-electron-beam-irradiated hydrogenated amorphous silicon |
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