Real-time synchrotron x-ray studies of low- and high-temperature nitridation of c -plane sapphire

The plasma nitridation kinetics of c-plane sapphire at both low (200-300 deg. C) and high (750 deg. C) substrate temperatures was examined using grazing-incidence real-time x-ray diffraction, in situ x-ray reflection and in situ reflection high-energy electron diffraction (RHEED). These monitored th...

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