Strong coupling of light with A and B excitons in GaN microcavities grown on silicon
We present experimental results demonstrating strong-light matter coupling at low and room temperature in bulk GaN microcavities with epitaxial (Al,Ga)N Bragg mirrors grown on silicon (111). At low temperature, the strong coupling of both the A and B excitonic features of GaN with the cavity mode is...
Gespeichert in:
| Veröffentlicht in: | Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2006-01, Vol.73 (3) |
|---|---|
| Hauptverfasser: | , , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | 3 |
| container_start_page | |
| container_title | Physical review. B, Condensed matter and materials physics |
| container_volume | 73 |
| creator | Sellers, I. R. Semond, F. Leroux, M. Massies, J. Disseix, P. Henneghien, A-L. Leymarie, J. Vasson, A. LASMEA, Universite Blaise Pascal, Clermont Ferrand II, Les Cezeaux, 63177 Aubiere Cedex |
| description | We present experimental results demonstrating strong-light matter coupling at low and room temperature in bulk GaN microcavities with epitaxial (Al,Ga)N Bragg mirrors grown on silicon (111). At low temperature, the strong coupling of both the A and B excitonic features of GaN with the cavity mode is clearly resolved in the microcavity. At room temperature a Rabi energy of 50 meV is observed and well reproduced using transfer-matrix reflectivity calculations describing the interaction of both the A and B excitonic states with the photonic mode. |
| doi_str_mv | 10.1103/PHYSREVB.73.0 |
| format | Article |
| fullrecord | <record><control><sourceid>osti</sourceid><recordid>TN_cdi_osti_scitechconnect_20787837</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>20787837</sourcerecordid><originalsourceid>FETCH-osti_scitechconnect_207878373</originalsourceid><addsrcrecordid>eNqNjLtuwkAQAE8RkWIgZfqVUtvZ82HZlBjxqCKELUQqZF0OeyNzG_mOx-fjgg-gmilGI8SHxEhKVF-b9U-xXezyKFURvohAJgmGsUr2g95xmoUoY_kmhs79IcrJdBIHoix8x7YGzef_lnrhI7RUNx6u5BuYQWV_IQdz0-TZOiALq-obTqQ71tWFPBkHdcdXC2zBUUua7Vi8HqvWmfcHR-JzuSjn65Cdp4PrV0Y3fWeN9ocY0yzNVKqeq-6ycUaf</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Strong coupling of light with A and B excitons in GaN microcavities grown on silicon</title><source>American Physical Society Journals</source><creator>Sellers, I. R. ; Semond, F. ; Leroux, M. ; Massies, J. ; Disseix, P. ; Henneghien, A-L. ; Leymarie, J. ; Vasson, A. ; LASMEA, Universite Blaise Pascal, Clermont Ferrand II, Les Cezeaux, 63177 Aubiere Cedex</creator><creatorcontrib>Sellers, I. R. ; Semond, F. ; Leroux, M. ; Massies, J. ; Disseix, P. ; Henneghien, A-L. ; Leymarie, J. ; Vasson, A. ; LASMEA, Universite Blaise Pascal, Clermont Ferrand II, Les Cezeaux, 63177 Aubiere Cedex</creatorcontrib><description>We present experimental results demonstrating strong-light matter coupling at low and room temperature in bulk GaN microcavities with epitaxial (Al,Ga)N Bragg mirrors grown on silicon (111). At low temperature, the strong coupling of both the A and B excitonic features of GaN with the cavity mode is clearly resolved in the microcavity. At room temperature a Rabi energy of 50 meV is observed and well reproduced using transfer-matrix reflectivity calculations describing the interaction of both the A and B excitonic states with the photonic mode.</description><identifier>ISSN: 1098-0121</identifier><identifier>EISSN: 1550-235X</identifier><identifier>DOI: 10.1103/PHYSREVB.73.0</identifier><language>eng</language><publisher>United States</publisher><subject>ALUMINIUM COMPOUNDS ; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ; COUPLING ; EPITAXY ; EXCITONS ; GALLIUM NITRIDES ; REFLECTIVITY ; SEMICONDUCTOR MATERIALS ; SILICON ; TEMPERATURE DEPENDENCE ; VISIBLE RADIATION</subject><ispartof>Physical review. B, Condensed matter and materials physics, 2006-01, Vol.73 (3)</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,776,780,881,27903,27904</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/20787837$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Sellers, I. R.</creatorcontrib><creatorcontrib>Semond, F.</creatorcontrib><creatorcontrib>Leroux, M.</creatorcontrib><creatorcontrib>Massies, J.</creatorcontrib><creatorcontrib>Disseix, P.</creatorcontrib><creatorcontrib>Henneghien, A-L.</creatorcontrib><creatorcontrib>Leymarie, J.</creatorcontrib><creatorcontrib>Vasson, A.</creatorcontrib><creatorcontrib>LASMEA, Universite Blaise Pascal, Clermont Ferrand II, Les Cezeaux, 63177 Aubiere Cedex</creatorcontrib><title>Strong coupling of light with A and B excitons in GaN microcavities grown on silicon</title><title>Physical review. B, Condensed matter and materials physics</title><description>We present experimental results demonstrating strong-light matter coupling at low and room temperature in bulk GaN microcavities with epitaxial (Al,Ga)N Bragg mirrors grown on silicon (111). At low temperature, the strong coupling of both the A and B excitonic features of GaN with the cavity mode is clearly resolved in the microcavity. At room temperature a Rabi energy of 50 meV is observed and well reproduced using transfer-matrix reflectivity calculations describing the interaction of both the A and B excitonic states with the photonic mode.</description><subject>ALUMINIUM COMPOUNDS</subject><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</subject><subject>COUPLING</subject><subject>EPITAXY</subject><subject>EXCITONS</subject><subject>GALLIUM NITRIDES</subject><subject>REFLECTIVITY</subject><subject>SEMICONDUCTOR MATERIALS</subject><subject>SILICON</subject><subject>TEMPERATURE DEPENDENCE</subject><subject>VISIBLE RADIATION</subject><issn>1098-0121</issn><issn>1550-235X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><recordid>eNqNjLtuwkAQAE8RkWIgZfqVUtvZ82HZlBjxqCKELUQqZF0OeyNzG_mOx-fjgg-gmilGI8SHxEhKVF-b9U-xXezyKFURvohAJgmGsUr2g95xmoUoY_kmhs79IcrJdBIHoix8x7YGzef_lnrhI7RUNx6u5BuYQWV_IQdz0-TZOiALq-obTqQ71tWFPBkHdcdXC2zBUUua7Vi8HqvWmfcHR-JzuSjn65Cdp4PrV0Y3fWeN9ocY0yzNVKqeq-6ycUaf</recordid><startdate>20060115</startdate><enddate>20060115</enddate><creator>Sellers, I. R.</creator><creator>Semond, F.</creator><creator>Leroux, M.</creator><creator>Massies, J.</creator><creator>Disseix, P.</creator><creator>Henneghien, A-L.</creator><creator>Leymarie, J.</creator><creator>Vasson, A.</creator><creator>LASMEA, Universite Blaise Pascal, Clermont Ferrand II, Les Cezeaux, 63177 Aubiere Cedex</creator><scope>OTOTI</scope></search><sort><creationdate>20060115</creationdate><title>Strong coupling of light with A and B excitons in GaN microcavities grown on silicon</title><author>Sellers, I. R. ; Semond, F. ; Leroux, M. ; Massies, J. ; Disseix, P. ; Henneghien, A-L. ; Leymarie, J. ; Vasson, A. ; LASMEA, Universite Blaise Pascal, Clermont Ferrand II, Les Cezeaux, 63177 Aubiere Cedex</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-osti_scitechconnect_207878373</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2006</creationdate><topic>ALUMINIUM COMPOUNDS</topic><topic>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</topic><topic>COUPLING</topic><topic>EPITAXY</topic><topic>EXCITONS</topic><topic>GALLIUM NITRIDES</topic><topic>REFLECTIVITY</topic><topic>SEMICONDUCTOR MATERIALS</topic><topic>SILICON</topic><topic>TEMPERATURE DEPENDENCE</topic><topic>VISIBLE RADIATION</topic><toplevel>online_resources</toplevel><creatorcontrib>Sellers, I. R.</creatorcontrib><creatorcontrib>Semond, F.</creatorcontrib><creatorcontrib>Leroux, M.</creatorcontrib><creatorcontrib>Massies, J.</creatorcontrib><creatorcontrib>Disseix, P.</creatorcontrib><creatorcontrib>Henneghien, A-L.</creatorcontrib><creatorcontrib>Leymarie, J.</creatorcontrib><creatorcontrib>Vasson, A.</creatorcontrib><creatorcontrib>LASMEA, Universite Blaise Pascal, Clermont Ferrand II, Les Cezeaux, 63177 Aubiere Cedex</creatorcontrib><collection>OSTI.GOV</collection><jtitle>Physical review. B, Condensed matter and materials physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Sellers, I. R.</au><au>Semond, F.</au><au>Leroux, M.</au><au>Massies, J.</au><au>Disseix, P.</au><au>Henneghien, A-L.</au><au>Leymarie, J.</au><au>Vasson, A.</au><au>LASMEA, Universite Blaise Pascal, Clermont Ferrand II, Les Cezeaux, 63177 Aubiere Cedex</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Strong coupling of light with A and B excitons in GaN microcavities grown on silicon</atitle><jtitle>Physical review. B, Condensed matter and materials physics</jtitle><date>2006-01-15</date><risdate>2006</risdate><volume>73</volume><issue>3</issue><issn>1098-0121</issn><eissn>1550-235X</eissn><abstract>We present experimental results demonstrating strong-light matter coupling at low and room temperature in bulk GaN microcavities with epitaxial (Al,Ga)N Bragg mirrors grown on silicon (111). At low temperature, the strong coupling of both the A and B excitonic features of GaN with the cavity mode is clearly resolved in the microcavity. At room temperature a Rabi energy of 50 meV is observed and well reproduced using transfer-matrix reflectivity calculations describing the interaction of both the A and B excitonic states with the photonic mode.</abstract><cop>United States</cop><doi>10.1103/PHYSREVB.73.0</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1098-0121 |
| ispartof | Physical review. B, Condensed matter and materials physics, 2006-01, Vol.73 (3) |
| issn | 1098-0121 1550-235X |
| language | eng |
| recordid | cdi_osti_scitechconnect_20787837 |
| source | American Physical Society Journals |
| subjects | ALUMINIUM COMPOUNDS CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY COUPLING EPITAXY EXCITONS GALLIUM NITRIDES REFLECTIVITY SEMICONDUCTOR MATERIALS SILICON TEMPERATURE DEPENDENCE VISIBLE RADIATION |
| title | Strong coupling of light with A and B excitons in GaN microcavities grown on silicon |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-24T22%3A55%3A52IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-osti&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Strong%20coupling%20of%20light%20with%20A%20and%20B%20excitons%20in%20GaN%20microcavities%20grown%20on%20silicon&rft.jtitle=Physical%20review.%20B,%20Condensed%20matter%20and%20materials%20physics&rft.au=Sellers,%20I.%20R.&rft.date=2006-01-15&rft.volume=73&rft.issue=3&rft.issn=1098-0121&rft.eissn=1550-235X&rft_id=info:doi/10.1103/PHYSREVB.73.0&rft_dat=%3Costi%3E20787837%3C/osti%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |