Three-dimensional imaging of nanovoids in copper interconnects using incoherent bright field tomography

As integrated circuits have shrunk, conventional electron microscopies have proven inadequate for imaging complicated interconnect structures due to the overlap of features in projection. These techniques produce transmission functions with a nonmonotonic dependence of intensity on thickness for com...

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Veröffentlicht in:	Applied physics letters 2006-06, Vol.88 (24)
Hauptverfasser:	Ercius, Peter, Weyland, Matthew, Muller, David A., Gignac, Lynne M.
Format:	Artikel
Sprache:	eng
Schlagworte:	CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS COPPER INTEGRATED CIRCUITS NANOSTRUCTURES SIGNALS STRESSES THICKNESS THREE-DIMENSIONAL CALCULATIONS TOMOGRAPHY TRANSMISSION ELECTRON MICROSCOPY VOIDS
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container_title	Applied physics letters
container_volume	88
creator	Ercius, Peter Weyland, Matthew Muller, David A. Gignac, Lynne M.
description	As integrated circuits have shrunk, conventional electron microscopies have proven inadequate for imaging complicated interconnect structures due to the overlap of features in projection. These techniques produce transmission functions with a nonmonotonic dependence of intensity on thickness for common microelectronic materials, making them unsuitable for tomography. We report the use of an incoherent bright field imaging technique in a scanning transmission electron microscope optimized for the three-dimensional reconstruction of thick copper microelectronic structures. Predictable behavior of the signal in samples up to ∼1μm thick allows us to reconstruct and quantify the shape and volume of stress voids within Ta-lined interconnects.
doi_str_mv	10.1063/1.2213185
format	Article
fullrecord	<record><control><sourceid>crossref_osti_</sourceid><recordid>TN_cdi_osti_scitechconnect_20779409</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_2213185</sourcerecordid><originalsourceid>FETCH-LOGICAL-c358t-e733010ada26a722861efb7172bb94e43c5dcceb06d3312ead671b68be4d23f73</originalsourceid><addsrcrecordid>eNotkE1LxDAQhoMouK4e_AcBTx66ZjJt0x5l8QsWvKznkibTNrKbLEkU9t9b2T3NDDwM7_swdg9iBaLGJ1hJCQhNdcEWIJQqEKC5ZAshBBZ1W8E1u0npez4ribhg43aKRIV1e_LJBa933O316PzIw8C99uE3OJu489yEw4HivGWKJnhPJif-k_5R502YKJLPvI9unDIfHO0sz2EfxqgP0_GWXQ16l-juPJfs6_Vlu34vNp9vH-vnTWGwanJBClGA0FbLWispmxpo6BUo2fdtSSWayhpDvagtIkjStlbQ101PpZU4KFyyh9PfkLLrknGZzHRO28lZSFuKdqYeT5SJIaVIQ3eIc-147EB0_x476M4e8Q8ZKma5</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Three-dimensional imaging of nanovoids in copper interconnects using incoherent bright field tomography</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><creator>Ercius, Peter ; Weyland, Matthew ; Muller, David A. ; Gignac, Lynne M.</creator><creatorcontrib>Ercius, Peter ; Weyland, Matthew ; Muller, David A. ; Gignac, Lynne M.</creatorcontrib><description>As integrated circuits have shrunk, conventional electron microscopies have proven inadequate for imaging complicated interconnect structures due to the overlap of features in projection. These techniques produce transmission functions with a nonmonotonic dependence of intensity on thickness for common microelectronic materials, making them unsuitable for tomography. We report the use of an incoherent bright field imaging technique in a scanning transmission electron microscope optimized for the three-dimensional reconstruction of thick copper microelectronic structures. Predictable behavior of the signal in samples up to ∼1μm thick allows us to reconstruct and quantify the shape and volume of stress voids within Ta-lined interconnects.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.2213185</identifier><language>eng</language><publisher>United States</publisher><subject>CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ; COPPER ; INTEGRATED CIRCUITS ; NANOSTRUCTURES ; SIGNALS ; STRESSES ; THICKNESS ; THREE-DIMENSIONAL CALCULATIONS ; TOMOGRAPHY ; TRANSMISSION ELECTRON MICROSCOPY ; VOIDS</subject><ispartof>Applied physics letters, 2006-06, Vol.88 (24)</ispartof><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c358t-e733010ada26a722861efb7172bb94e43c5dcceb06d3312ead671b68be4d23f73</citedby><cites>FETCH-LOGICAL-c358t-e733010ada26a722861efb7172bb94e43c5dcceb06d3312ead671b68be4d23f73</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,315,782,786,887,27933,27934</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/20779409$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Ercius, Peter</creatorcontrib><creatorcontrib>Weyland, Matthew</creatorcontrib><creatorcontrib>Muller, David A.</creatorcontrib><creatorcontrib>Gignac, Lynne M.</creatorcontrib><title>Three-dimensional imaging of nanovoids in copper interconnects using incoherent bright field tomography</title><title>Applied physics letters</title><description>As integrated circuits have shrunk, conventional electron microscopies have proven inadequate for imaging complicated interconnect structures due to the overlap of features in projection. These techniques produce transmission functions with a nonmonotonic dependence of intensity on thickness for common microelectronic materials, making them unsuitable for tomography. We report the use of an incoherent bright field imaging technique in a scanning transmission electron microscope optimized for the three-dimensional reconstruction of thick copper microelectronic structures. Predictable behavior of the signal in samples up to ∼1μm thick allows us to reconstruct and quantify the shape and volume of stress voids within Ta-lined interconnects.</description><subject>CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS</subject><subject>COPPER</subject><subject>INTEGRATED CIRCUITS</subject><subject>NANOSTRUCTURES</subject><subject>SIGNALS</subject><subject>STRESSES</subject><subject>THICKNESS</subject><subject>THREE-DIMENSIONAL CALCULATIONS</subject><subject>TOMOGRAPHY</subject><subject>TRANSMISSION ELECTRON MICROSCOPY</subject><subject>VOIDS</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><recordid>eNotkE1LxDAQhoMouK4e_AcBTx66ZjJt0x5l8QsWvKznkibTNrKbLEkU9t9b2T3NDDwM7_swdg9iBaLGJ1hJCQhNdcEWIJQqEKC5ZAshBBZ1W8E1u0npez4ribhg43aKRIV1e_LJBa933O316PzIw8C99uE3OJu489yEw4HivGWKJnhPJif-k_5R502YKJLPvI9unDIfHO0sz2EfxqgP0_GWXQ16l-juPJfs6_Vlu34vNp9vH-vnTWGwanJBClGA0FbLWispmxpo6BUo2fdtSSWayhpDvagtIkjStlbQ101PpZU4KFyyh9PfkLLrknGZzHRO28lZSFuKdqYeT5SJIaVIQ3eIc-147EB0_x476M4e8Q8ZKma5</recordid><startdate>20060612</startdate><enddate>20060612</enddate><creator>Ercius, Peter</creator><creator>Weyland, Matthew</creator><creator>Muller, David A.</creator><creator>Gignac, Lynne M.</creator><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>20060612</creationdate><title>Three-dimensional imaging of nanovoids in copper interconnects using incoherent bright field tomography</title><author>Ercius, Peter ; Weyland, Matthew ; Muller, David A. ; Gignac, Lynne M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c358t-e733010ada26a722861efb7172bb94e43c5dcceb06d3312ead671b68be4d23f73</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2006</creationdate><topic>CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS</topic><topic>COPPER</topic><topic>INTEGRATED CIRCUITS</topic><topic>NANOSTRUCTURES</topic><topic>SIGNALS</topic><topic>STRESSES</topic><topic>THICKNESS</topic><topic>THREE-DIMENSIONAL CALCULATIONS</topic><topic>TOMOGRAPHY</topic><topic>TRANSMISSION ELECTRON MICROSCOPY</topic><topic>VOIDS</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ercius, Peter</creatorcontrib><creatorcontrib>Weyland, Matthew</creatorcontrib><creatorcontrib>Muller, David A.</creatorcontrib><creatorcontrib>Gignac, Lynne M.</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ercius, Peter</au><au>Weyland, Matthew</au><au>Muller, David A.</au><au>Gignac, Lynne M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Three-dimensional imaging of nanovoids in copper interconnects using incoherent bright field tomography</atitle><jtitle>Applied physics letters</jtitle><date>2006-06-12</date><risdate>2006</risdate><volume>88</volume><issue>24</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>As integrated circuits have shrunk, conventional electron microscopies have proven inadequate for imaging complicated interconnect structures due to the overlap of features in projection. These techniques produce transmission functions with a nonmonotonic dependence of intensity on thickness for common microelectronic materials, making them unsuitable for tomography. We report the use of an incoherent bright field imaging technique in a scanning transmission electron microscope optimized for the three-dimensional reconstruction of thick copper microelectronic structures. Predictable behavior of the signal in samples up to ∼1μm thick allows us to reconstruct and quantify the shape and volume of stress voids within Ta-lined interconnects.</abstract><cop>United States</cop><doi>10.1063/1.2213185</doi><oa>free_for_read</oa></addata></record>
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subjects	CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS COPPER INTEGRATED CIRCUITS NANOSTRUCTURES SIGNALS STRESSES THICKNESS THREE-DIMENSIONAL CALCULATIONS TOMOGRAPHY TRANSMISSION ELECTRON MICROSCOPY VOIDS
title	Three-dimensional imaging of nanovoids in copper interconnects using incoherent bright field tomography
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-02T07%3A52%3A38IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref_osti_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Three-dimensional%20imaging%20of%20nanovoids%20in%20copper%20interconnects%20using%20incoherent%20bright%20field%20tomography&rft.jtitle=Applied%20physics%20letters&rft.au=Ercius,%20Peter&rft.date=2006-06-12&rft.volume=88&rft.issue=24&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.2213185&rft_dat=%3Ccrossref_osti_%3E10_1063_1_2213185%3C/crossref_osti_%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true