Band offsets of Er{sub 2}O{sub 3} films epitaxially grown on Si substrates

The experimental data on band alignments of high-k Er{sub 2}O{sub 3} films epitaxially grown on Si substrates by molecular beam epitaxy are reported. By using x-ray photoelectron spectroscopy, the valence and the conduction-band offsets of Er{sub 2}O{sub 3} to Si are obtained to be 3.1{+-}0.1 and 3....

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Veröffentlicht in:	Applied physics letters 2006-04, Vol.88 (16)
Hauptverfasser:	Zhu, Y.Y., Chen, S., Xu, R., Fang, Z.B., Zhao, J.F., Fan, Y.L., Yang, X.J., Jiang, Z.M.
Format:	Artikel
Sprache:	eng
Schlagworte:	CRYSTAL GROWTH DIELECTRIC MATERIALS ENERGY GAP ERBIUM OXIDES EV RANGE 01-10 EXPERIMENTAL DATA LAYERS MATERIALS SCIENCE MOLECULAR BEAM EPITAXY SEMICONDUCTOR MATERIALS SUBSTRATES THIN FILMS VALENCE X-RAY PHOTOELECTRON SPECTROSCOPY
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