Band offsets of Er{sub 2}O{sub 3} films epitaxially grown on Si substrates
The experimental data on band alignments of high-k Er{sub 2}O{sub 3} films epitaxially grown on Si substrates by molecular beam epitaxy are reported. By using x-ray photoelectron spectroscopy, the valence and the conduction-band offsets of Er{sub 2}O{sub 3} to Si are obtained to be 3.1{+-}0.1 and 3....
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| Veröffentlicht in: | Applied physics letters 2006-04, Vol.88 (16) |
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| container_title | Applied physics letters |
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| creator | Zhu, Y.Y. Chen, S. Xu, R. Fang, Z.B. Zhao, J.F. Fan, Y.L. Yang, X.J. Jiang, Z.M. |
| description | The experimental data on band alignments of high-k Er{sub 2}O{sub 3} films epitaxially grown on Si substrates by molecular beam epitaxy are reported. By using x-ray photoelectron spectroscopy, the valence and the conduction-band offsets of Er{sub 2}O{sub 3} to Si are obtained to be 3.1{+-}0.1 and 3.5{+-}0.3 eV, respectively, showing a roughly symmetrical offset at the conduction and the valence band. The energy gap of Er{sub 2}O{sub 3} is determined to be 7.6{+-}0.3 eV. From the band offset viewpoint, those obtained numbers indicate that Er{sub 2}O{sub 3} could be a promising candidate for high-k gate dielectrics. |
| doi_str_mv | 10.1063/1.2196476 |
| format | Article |
| fullrecord | <record><control><sourceid>osti</sourceid><recordid>TN_cdi_osti_scitechconnect_20779131</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>20779131</sourcerecordid><originalsourceid>FETCH-osti_scitechconnect_207791313</originalsourceid><addsrcrecordid>eNqNzr0KwjAUhuEgCtafwTs44FzNaWxrV6UiLg66l1hTjdREeiIq0nu3iBfg9PDBO3yMjZBPkEdiipMAk2gWRy3mIY9jXyDO28zjnAs_SkLssh7RpZlhIITHNgtpjmCLgpSjRkirN90PENTbr6KGQpdXAnXTTj61LMsXnCr7MGAN7DQ0EblKOkUD1ilkSWr4s8_Gq3S_XPuWnM4o107l59wao3KXBc23BAWK_6oPcxBBhw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Band offsets of Er{sub 2}O{sub 3} films epitaxially grown on Si substrates</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><creator>Zhu, Y.Y. ; Chen, S. ; Xu, R. ; Fang, Z.B. ; Zhao, J.F. ; Fan, Y.L. ; Yang, X.J. ; Jiang, Z.M.</creator><creatorcontrib>Zhu, Y.Y. ; Chen, S. ; Xu, R. ; Fang, Z.B. ; Zhao, J.F. ; Fan, Y.L. ; Yang, X.J. ; Jiang, Z.M.</creatorcontrib><description>The experimental data on band alignments of high-k Er{sub 2}O{sub 3} films epitaxially grown on Si substrates by molecular beam epitaxy are reported. By using x-ray photoelectron spectroscopy, the valence and the conduction-band offsets of Er{sub 2}O{sub 3} to Si are obtained to be 3.1{+-}0.1 and 3.5{+-}0.3 eV, respectively, showing a roughly symmetrical offset at the conduction and the valence band. The energy gap of Er{sub 2}O{sub 3} is determined to be 7.6{+-}0.3 eV. From the band offset viewpoint, those obtained numbers indicate that Er{sub 2}O{sub 3} could be a promising candidate for high-k gate dielectrics.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.2196476</identifier><language>eng</language><publisher>United States</publisher><subject>CRYSTAL GROWTH ; DIELECTRIC MATERIALS ; ENERGY GAP ; ERBIUM OXIDES ; EV RANGE 01-10 ; EXPERIMENTAL DATA ; LAYERS ; MATERIALS SCIENCE ; MOLECULAR BEAM EPITAXY ; SEMICONDUCTOR MATERIALS ; SUBSTRATES ; THIN FILMS ; VALENCE ; X-RAY PHOTOELECTRON SPECTROSCOPY</subject><ispartof>Applied physics letters, 2006-04, Vol.88 (16)</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,780,784,885,27924,27925</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/20779131$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Zhu, Y.Y.</creatorcontrib><creatorcontrib>Chen, S.</creatorcontrib><creatorcontrib>Xu, R.</creatorcontrib><creatorcontrib>Fang, Z.B.</creatorcontrib><creatorcontrib>Zhao, J.F.</creatorcontrib><creatorcontrib>Fan, Y.L.</creatorcontrib><creatorcontrib>Yang, X.J.</creatorcontrib><creatorcontrib>Jiang, Z.M.</creatorcontrib><title>Band offsets of Er{sub 2}O{sub 3} films epitaxially grown on Si substrates</title><title>Applied physics letters</title><description>The experimental data on band alignments of high-k Er{sub 2}O{sub 3} films epitaxially grown on Si substrates by molecular beam epitaxy are reported. By using x-ray photoelectron spectroscopy, the valence and the conduction-band offsets of Er{sub 2}O{sub 3} to Si are obtained to be 3.1{+-}0.1 and 3.5{+-}0.3 eV, respectively, showing a roughly symmetrical offset at the conduction and the valence band. The energy gap of Er{sub 2}O{sub 3} is determined to be 7.6{+-}0.3 eV. From the band offset viewpoint, those obtained numbers indicate that Er{sub 2}O{sub 3} could be a promising candidate for high-k gate dielectrics.</description><subject>CRYSTAL GROWTH</subject><subject>DIELECTRIC MATERIALS</subject><subject>ENERGY GAP</subject><subject>ERBIUM OXIDES</subject><subject>EV RANGE 01-10</subject><subject>EXPERIMENTAL DATA</subject><subject>LAYERS</subject><subject>MATERIALS SCIENCE</subject><subject>MOLECULAR BEAM EPITAXY</subject><subject>SEMICONDUCTOR MATERIALS</subject><subject>SUBSTRATES</subject><subject>THIN FILMS</subject><subject>VALENCE</subject><subject>X-RAY PHOTOELECTRON SPECTROSCOPY</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><recordid>eNqNzr0KwjAUhuEgCtafwTs44FzNaWxrV6UiLg66l1hTjdREeiIq0nu3iBfg9PDBO3yMjZBPkEdiipMAk2gWRy3mIY9jXyDO28zjnAs_SkLssh7RpZlhIITHNgtpjmCLgpSjRkirN90PENTbr6KGQpdXAnXTTj61LMsXnCr7MGAN7DQ0EblKOkUD1ilkSWr4s8_Gq3S_XPuWnM4o107l59wao3KXBc23BAWK_6oPcxBBhw</recordid><startdate>20060417</startdate><enddate>20060417</enddate><creator>Zhu, Y.Y.</creator><creator>Chen, S.</creator><creator>Xu, R.</creator><creator>Fang, Z.B.</creator><creator>Zhao, J.F.</creator><creator>Fan, Y.L.</creator><creator>Yang, X.J.</creator><creator>Jiang, Z.M.</creator><scope>OTOTI</scope></search><sort><creationdate>20060417</creationdate><title>Band offsets of Er{sub 2}O{sub 3} films epitaxially grown on Si substrates</title><author>Zhu, Y.Y. ; Chen, S. ; Xu, R. ; Fang, Z.B. ; Zhao, J.F. ; Fan, Y.L. ; Yang, X.J. ; Jiang, Z.M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-osti_scitechconnect_207791313</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2006</creationdate><topic>CRYSTAL GROWTH</topic><topic>DIELECTRIC MATERIALS</topic><topic>ENERGY GAP</topic><topic>ERBIUM OXIDES</topic><topic>EV RANGE 01-10</topic><topic>EXPERIMENTAL DATA</topic><topic>LAYERS</topic><topic>MATERIALS SCIENCE</topic><topic>MOLECULAR BEAM EPITAXY</topic><topic>SEMICONDUCTOR MATERIALS</topic><topic>SUBSTRATES</topic><topic>THIN FILMS</topic><topic>VALENCE</topic><topic>X-RAY PHOTOELECTRON SPECTROSCOPY</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhu, Y.Y.</creatorcontrib><creatorcontrib>Chen, S.</creatorcontrib><creatorcontrib>Xu, R.</creatorcontrib><creatorcontrib>Fang, Z.B.</creatorcontrib><creatorcontrib>Zhao, J.F.</creatorcontrib><creatorcontrib>Fan, Y.L.</creatorcontrib><creatorcontrib>Yang, X.J.</creatorcontrib><creatorcontrib>Jiang, Z.M.</creatorcontrib><collection>OSTI.GOV</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zhu, Y.Y.</au><au>Chen, S.</au><au>Xu, R.</au><au>Fang, Z.B.</au><au>Zhao, J.F.</au><au>Fan, Y.L.</au><au>Yang, X.J.</au><au>Jiang, Z.M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Band offsets of Er{sub 2}O{sub 3} films epitaxially grown on Si substrates</atitle><jtitle>Applied physics letters</jtitle><date>2006-04-17</date><risdate>2006</risdate><volume>88</volume><issue>16</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>The experimental data on band alignments of high-k Er{sub 2}O{sub 3} films epitaxially grown on Si substrates by molecular beam epitaxy are reported. By using x-ray photoelectron spectroscopy, the valence and the conduction-band offsets of Er{sub 2}O{sub 3} to Si are obtained to be 3.1{+-}0.1 and 3.5{+-}0.3 eV, respectively, showing a roughly symmetrical offset at the conduction and the valence band. The energy gap of Er{sub 2}O{sub 3} is determined to be 7.6{+-}0.3 eV. From the band offset viewpoint, those obtained numbers indicate that Er{sub 2}O{sub 3} could be a promising candidate for high-k gate dielectrics.</abstract><cop>United States</cop><doi>10.1063/1.2196476</doi></addata></record> |
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| ispartof | Applied physics letters, 2006-04, Vol.88 (16) |
| issn | 0003-6951 1077-3118 |
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| source | AIP Journals Complete; AIP Digital Archive |
| subjects | CRYSTAL GROWTH DIELECTRIC MATERIALS ENERGY GAP ERBIUM OXIDES EV RANGE 01-10 EXPERIMENTAL DATA LAYERS MATERIALS SCIENCE MOLECULAR BEAM EPITAXY SEMICONDUCTOR MATERIALS SUBSTRATES THIN FILMS VALENCE X-RAY PHOTOELECTRON SPECTROSCOPY |
| title | Band offsets of Er{sub 2}O{sub 3} films epitaxially grown on Si substrates |
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