Controlling defect and Si nanoparticle luminescence from silicon oxynitride films with CO{sub 2} laser annealing
We demonstrate that a focused CO{sub 2} laser beam ({lambda}=10.6 {mu}m) can be employed to locally synthesize light emitting defects and Si nanoparticles in silicon rich oxynitride thin films. Films with a stoichiometry of SiO{sub 1.08}N{sub 0.32} were prepared by plasma enhanced chemical vapor dep...
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| Veröffentlicht in: | Applied physics letters 2006-02, Vol.88 (9) |
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| container_title | Applied physics letters |
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| creator | Tewary, Anuranjita Kekatpure, Rohan D. Brongersma, Mark L. |
| description | We demonstrate that a focused CO{sub 2} laser beam ({lambda}=10.6 {mu}m) can be employed to locally synthesize light emitting defects and Si nanoparticles in silicon rich oxynitride thin films. Films with a stoichiometry of SiO{sub 1.08}N{sub 0.32} were prepared by plasma enhanced chemical vapor deposition with N{sub 2}O and SiH{sub 4}. Strongly absorbing CO{sub 2} laser light was then used to induce local heating in the films in air ambient using power densities in the range from 0 to 580 W/cm{sup 2} and times of 5 s to 60 min. High-resolution cross sectional transmission electron microscopy (TEM) images of the irradiated region revealed the presence of crystalline Si nanoparticles. Photoluminescence (PL) spectra taken from irradiated areas showed two distinct peaks around 570 and 800 nm. From a combined TEM, Rutherford back scattering (RBS), forming gas annealing (FGA), PL, and PL lifetime study it is concluded that the 570 nm peak with a short PL lifetime ( |
| doi_str_mv | 10.1063/1.2178769 |
| format | Article |
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Films with a stoichiometry of SiO{sub 1.08}N{sub 0.32} were prepared by plasma enhanced chemical vapor deposition with N{sub 2}O and SiH{sub 4}. Strongly absorbing CO{sub 2} laser light was then used to induce local heating in the films in air ambient using power densities in the range from 0 to 580 W/cm{sup 2} and times of 5 s to 60 min. High-resolution cross sectional transmission electron microscopy (TEM) images of the irradiated region revealed the presence of crystalline Si nanoparticles. Photoluminescence (PL) spectra taken from irradiated areas showed two distinct peaks around 570 and 800 nm. From a combined TEM, Rutherford back scattering (RBS), forming gas annealing (FGA), PL, and PL lifetime study it is concluded that the 570 nm peak with a short PL lifetime (<10 ns) is related to defects characteristic of silicon suboxides and that the 800 nm peak is due to exciton recombination inside the Si nanoparticles. The appearance of an isosbestic point in the PL spectra suggests that upon CO{sub 2} laser heating Si nanoparticles are formed at the expense of the luminescent defect structures, which are annealed out.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.2178769</identifier><language>eng</language><publisher>United States</publisher><subject>ABSORPTION SPECTRA ; ANNEALING ; CARBON DIOXIDE LASERS ; CHEMICAL VAPOR DEPOSITION ; CRYSTAL DEFECTS ; EXCITONS ; MATERIALS SCIENCE ; NANOSTRUCTURES ; NITROUS OXIDE ; PARTICLES ; PHOTOLUMINESCENCE ; PLASMA ; POWER DENSITY ; RECOMBINATION ; RUTHERFORD BACKSCATTERING SPECTROSCOPY ; SEMICONDUCTOR MATERIALS ; SILANES ; SILICON ; STOICHIOMETRY ; THIN FILMS ; TRANSMISSION ELECTRON MICROSCOPY</subject><ispartof>Applied physics letters, 2006-02, Vol.88 (9)</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,776,780,881,27903,27904</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/20778758$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Tewary, Anuranjita</creatorcontrib><creatorcontrib>Kekatpure, Rohan D.</creatorcontrib><creatorcontrib>Brongersma, Mark L.</creatorcontrib><title>Controlling defect and Si nanoparticle luminescence from silicon oxynitride films with CO{sub 2} laser annealing</title><title>Applied physics letters</title><description>We demonstrate that a focused CO{sub 2} laser beam ({lambda}=10.6 {mu}m) can be employed to locally synthesize light emitting defects and Si nanoparticles in silicon rich oxynitride thin films. Films with a stoichiometry of SiO{sub 1.08}N{sub 0.32} were prepared by plasma enhanced chemical vapor deposition with N{sub 2}O and SiH{sub 4}. Strongly absorbing CO{sub 2} laser light was then used to induce local heating in the films in air ambient using power densities in the range from 0 to 580 W/cm{sup 2} and times of 5 s to 60 min. High-resolution cross sectional transmission electron microscopy (TEM) images of the irradiated region revealed the presence of crystalline Si nanoparticles. Photoluminescence (PL) spectra taken from irradiated areas showed two distinct peaks around 570 and 800 nm. From a combined TEM, Rutherford back scattering (RBS), forming gas annealing (FGA), PL, and PL lifetime study it is concluded that the 570 nm peak with a short PL lifetime (<10 ns) is related to defects characteristic of silicon suboxides and that the 800 nm peak is due to exciton recombination inside the Si nanoparticles. The appearance of an isosbestic point in the PL spectra suggests that upon CO{sub 2} laser heating Si nanoparticles are formed at the expense of the luminescent defect structures, which are annealed out.</description><subject>ABSORPTION SPECTRA</subject><subject>ANNEALING</subject><subject>CARBON DIOXIDE LASERS</subject><subject>CHEMICAL VAPOR DEPOSITION</subject><subject>CRYSTAL DEFECTS</subject><subject>EXCITONS</subject><subject>MATERIALS SCIENCE</subject><subject>NANOSTRUCTURES</subject><subject>NITROUS OXIDE</subject><subject>PARTICLES</subject><subject>PHOTOLUMINESCENCE</subject><subject>PLASMA</subject><subject>POWER DENSITY</subject><subject>RECOMBINATION</subject><subject>RUTHERFORD BACKSCATTERING SPECTROSCOPY</subject><subject>SEMICONDUCTOR MATERIALS</subject><subject>SILANES</subject><subject>SILICON</subject><subject>STOICHIOMETRY</subject><subject>THIN FILMS</subject><subject>TRANSMISSION ELECTRON MICROSCOPY</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><recordid>eNqNT8tKBDEQDOKC4-PgHzR4njWZMI89D4o3D-59iZme3ZZMZ0lnURH_3Qh-gKeiiqIeSt0avTa6s_dm3Zh-6LvNmaqM7vvaGjOcq0prbetu05oLdSnyVmjbWFup4xg5pxgC8R4mnNFncDzBCwE7jkeXMvmAEE4LMYpH9ghzigsIBfKRIX58MuVEU9EpLALvlA8wPn_J6RWabwhOMJVMRvdbcq1WswuCN394pe4eH7bjUx0l0048ZfSHkstlya4pD4a-Hez_XD_XXlCZ</recordid><startdate>20060227</startdate><enddate>20060227</enddate><creator>Tewary, Anuranjita</creator><creator>Kekatpure, Rohan D.</creator><creator>Brongersma, Mark L.</creator><scope>OTOTI</scope></search><sort><creationdate>20060227</creationdate><title>Controlling defect and Si nanoparticle luminescence from silicon oxynitride films with CO{sub 2} laser annealing</title><author>Tewary, Anuranjita ; Kekatpure, Rohan D. ; Brongersma, Mark L.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-osti_scitechconnect_207787583</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2006</creationdate><topic>ABSORPTION SPECTRA</topic><topic>ANNEALING</topic><topic>CARBON DIOXIDE LASERS</topic><topic>CHEMICAL VAPOR DEPOSITION</topic><topic>CRYSTAL DEFECTS</topic><topic>EXCITONS</topic><topic>MATERIALS SCIENCE</topic><topic>NANOSTRUCTURES</topic><topic>NITROUS OXIDE</topic><topic>PARTICLES</topic><topic>PHOTOLUMINESCENCE</topic><topic>PLASMA</topic><topic>POWER DENSITY</topic><topic>RECOMBINATION</topic><topic>RUTHERFORD BACKSCATTERING SPECTROSCOPY</topic><topic>SEMICONDUCTOR MATERIALS</topic><topic>SILANES</topic><topic>SILICON</topic><topic>STOICHIOMETRY</topic><topic>THIN FILMS</topic><topic>TRANSMISSION ELECTRON MICROSCOPY</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Tewary, Anuranjita</creatorcontrib><creatorcontrib>Kekatpure, Rohan D.</creatorcontrib><creatorcontrib>Brongersma, Mark L.</creatorcontrib><collection>OSTI.GOV</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Tewary, Anuranjita</au><au>Kekatpure, Rohan D.</au><au>Brongersma, Mark L.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Controlling defect and Si nanoparticle luminescence from silicon oxynitride films with CO{sub 2} laser annealing</atitle><jtitle>Applied physics letters</jtitle><date>2006-02-27</date><risdate>2006</risdate><volume>88</volume><issue>9</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>We demonstrate that a focused CO{sub 2} laser beam ({lambda}=10.6 {mu}m) can be employed to locally synthesize light emitting defects and Si nanoparticles in silicon rich oxynitride thin films. Films with a stoichiometry of SiO{sub 1.08}N{sub 0.32} were prepared by plasma enhanced chemical vapor deposition with N{sub 2}O and SiH{sub 4}. Strongly absorbing CO{sub 2} laser light was then used to induce local heating in the films in air ambient using power densities in the range from 0 to 580 W/cm{sup 2} and times of 5 s to 60 min. High-resolution cross sectional transmission electron microscopy (TEM) images of the irradiated region revealed the presence of crystalline Si nanoparticles. Photoluminescence (PL) spectra taken from irradiated areas showed two distinct peaks around 570 and 800 nm. From a combined TEM, Rutherford back scattering (RBS), forming gas annealing (FGA), PL, and PL lifetime study it is concluded that the 570 nm peak with a short PL lifetime (<10 ns) is related to defects characteristic of silicon suboxides and that the 800 nm peak is due to exciton recombination inside the Si nanoparticles. The appearance of an isosbestic point in the PL spectra suggests that upon CO{sub 2} laser heating Si nanoparticles are formed at the expense of the luminescent defect structures, which are annealed out.</abstract><cop>United States</cop><doi>10.1063/1.2178769</doi></addata></record> |
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| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2006-02, Vol.88 (9) |
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| source | AIP Journals Complete; AIP Digital Archive |
| subjects | ABSORPTION SPECTRA ANNEALING CARBON DIOXIDE LASERS CHEMICAL VAPOR DEPOSITION CRYSTAL DEFECTS EXCITONS MATERIALS SCIENCE NANOSTRUCTURES NITROUS OXIDE PARTICLES PHOTOLUMINESCENCE PLASMA POWER DENSITY RECOMBINATION RUTHERFORD BACKSCATTERING SPECTROSCOPY SEMICONDUCTOR MATERIALS SILANES SILICON STOICHIOMETRY THIN FILMS TRANSMISSION ELECTRON MICROSCOPY |
| title | Controlling defect and Si nanoparticle luminescence from silicon oxynitride films with CO{sub 2} laser annealing |
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