High-resolution actinic defect inspection for extreme ultraviolet lithography multilayer mask blanks by photoemission electron microscopy
We report on the development and first experimental results of a "at wavelength" full-field imaging technique for defect inspection of multilayer mask blanks for extreme ultraviolet (EUV) lithography. According to the International Semiconductor Roadmap by Sematech, less than 5 × 10 − 3 de...
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| Veröffentlicht in: | Applied physics letters 2006-01, Vol.88 (5), p.053113-053113-3 |
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| container_title | Applied physics letters |
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| creator | Neuhäusler, U. Oelsner, A. Slieh, J. Brzeska, M. Wonisch, A. Westerwalbesloh, T. Brückl, H. Schicketanz, M. Weber, N. Escher, M. Merkel, M. Schönhense, G. Kleineberg, U. Heinzmann, U. |
| description | We report on the development and first experimental results of a "at wavelength" full-field imaging technique for defect inspection of multilayer mask blanks for extreme ultraviolet (EUV) lithography. According to the International Semiconductor Roadmap by Sematech, less than
5
×
10
−
3
defects per
cm
2
should be present on such multilayer mask blank to enable mass production of microelectronics using EUV lithography, thus fast high-resolution methods for mask defect inspection and localization are needed. Our approach uses a photoemission electron microscope in a normal incidence illumination mode at 13 nm to image the photoelectron emission induced by the EUV wave field on the multilayer mask blank surface. We show that by these means, buried defects in the multilayer stack can be probed down to a lateral size of 50 nm. |
| doi_str_mv | 10.1063/1.2168263 |
| format | Article |
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5
×
10
−
3
defects per
cm
2
should be present on such multilayer mask blank to enable mass production of microelectronics using EUV lithography, thus fast high-resolution methods for mask defect inspection and localization are needed. Our approach uses a photoemission electron microscope in a normal incidence illumination mode at 13 nm to image the photoelectron emission induced by the EUV wave field on the multilayer mask blank surface. We show that by these means, buried defects in the multilayer stack can be probed down to a lateral size of 50 nm.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.2168263</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>United States: American Institute of Physics</publisher><subject>CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ; ELECTRON MICROSCOPES ; ELECTRON MICROSCOPY ; EXTREME ULTRAVIOLET RADIATION ; ILLUMINANCE ; INSPECTION ; MASS ; MICROELECTRONICS ; PHOTOEMISSION ; RESOLUTION ; SEMICONDUCTOR MATERIALS ; WAVELENGTHS</subject><ispartof>Applied physics letters, 2006-01, Vol.88 (5), p.053113-053113-3</ispartof><rights>2006 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c312t-c7a2b25ee5806d2493ff022011d1c3ed2ddcbdb422e372a1cf0bcc9f3f9f57993</citedby><cites>FETCH-LOGICAL-c312t-c7a2b25ee5806d2493ff022011d1c3ed2ddcbdb422e372a1cf0bcc9f3f9f57993</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.2168263$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>230,314,780,784,794,885,1558,4509,27922,27923,76154,76160</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/20778668$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Neuhäusler, U.</creatorcontrib><creatorcontrib>Oelsner, A.</creatorcontrib><creatorcontrib>Slieh, J.</creatorcontrib><creatorcontrib>Brzeska, M.</creatorcontrib><creatorcontrib>Wonisch, A.</creatorcontrib><creatorcontrib>Westerwalbesloh, T.</creatorcontrib><creatorcontrib>Brückl, H.</creatorcontrib><creatorcontrib>Schicketanz, M.</creatorcontrib><creatorcontrib>Weber, N.</creatorcontrib><creatorcontrib>Escher, M.</creatorcontrib><creatorcontrib>Merkel, M.</creatorcontrib><creatorcontrib>Schönhense, G.</creatorcontrib><creatorcontrib>Kleineberg, U.</creatorcontrib><creatorcontrib>Heinzmann, U.</creatorcontrib><title>High-resolution actinic defect inspection for extreme ultraviolet lithography multilayer mask blanks by photoemission electron microscopy</title><title>Applied physics letters</title><description>We report on the development and first experimental results of a "at wavelength" full-field imaging technique for defect inspection of multilayer mask blanks for extreme ultraviolet (EUV) lithography. According to the International Semiconductor Roadmap by Sematech, less than
5
×
10
−
3
defects per
cm
2
should be present on such multilayer mask blank to enable mass production of microelectronics using EUV lithography, thus fast high-resolution methods for mask defect inspection and localization are needed. Our approach uses a photoemission electron microscope in a normal incidence illumination mode at 13 nm to image the photoelectron emission induced by the EUV wave field on the multilayer mask blank surface. We show that by these means, buried defects in the multilayer stack can be probed down to a lateral size of 50 nm.</description><subject>CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS</subject><subject>ELECTRON MICROSCOPES</subject><subject>ELECTRON MICROSCOPY</subject><subject>EXTREME ULTRAVIOLET RADIATION</subject><subject>ILLUMINANCE</subject><subject>INSPECTION</subject><subject>MASS</subject><subject>MICROELECTRONICS</subject><subject>PHOTOEMISSION</subject><subject>RESOLUTION</subject><subject>SEMICONDUCTOR MATERIALS</subject><subject>WAVELENGTHS</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><recordid>eNp1kMtKxDAUhoMoOF4WvkHAlYuOuUxvG0FEHWHAja5Dmp5M47RNSaLYR_CtTZgBV67OOfwfP4cPoStKlpQU_JYuGS0qVvAjtKCkLDNOaXWMFoQQnhV1Tk_Rmfcf8cwZ5wv0szbbLnPgbf8ZjB2xVMGMRuEWNKiAzeinOFOircPwHRwMgD_74OSXsT0E3JvQ2a2TUzfjIQamlzM4PEi_w00vx53HzYynzgYLg_E-dUEfS11cBqOc9cpO8wU60bL3cHmY5-j96fHtYZ1tXp9fHu43meKUhUyVkjUsB8grUrRsVXOtCWOE0pYqDi1rW9W0zYox4CWTVGnSKFVrrmudl3XNz9H1vtf6YIRXJoDqlB3H-JFgUVlVFFWkbvZUes870GJyZpBuFpSIZFpQcTAd2bs9m8pkcvU_nHSLP90i6ea_kd-K1A</recordid><startdate>20060130</startdate><enddate>20060130</enddate><creator>Neuhäusler, U.</creator><creator>Oelsner, A.</creator><creator>Slieh, J.</creator><creator>Brzeska, M.</creator><creator>Wonisch, A.</creator><creator>Westerwalbesloh, T.</creator><creator>Brückl, H.</creator><creator>Schicketanz, M.</creator><creator>Weber, N.</creator><creator>Escher, M.</creator><creator>Merkel, M.</creator><creator>Schönhense, G.</creator><creator>Kleineberg, U.</creator><creator>Heinzmann, U.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>20060130</creationdate><title>High-resolution actinic defect inspection for extreme ultraviolet lithography multilayer mask blanks by photoemission electron microscopy</title><author>Neuhäusler, U. ; Oelsner, A. ; Slieh, J. ; Brzeska, M. ; Wonisch, A. ; Westerwalbesloh, T. ; Brückl, H. ; Schicketanz, M. ; Weber, N. ; Escher, M. ; Merkel, M. ; Schönhense, G. ; Kleineberg, U. ; Heinzmann, U.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c312t-c7a2b25ee5806d2493ff022011d1c3ed2ddcbdb422e372a1cf0bcc9f3f9f57993</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2006</creationdate><topic>CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS</topic><topic>ELECTRON MICROSCOPES</topic><topic>ELECTRON MICROSCOPY</topic><topic>EXTREME ULTRAVIOLET RADIATION</topic><topic>ILLUMINANCE</topic><topic>INSPECTION</topic><topic>MASS</topic><topic>MICROELECTRONICS</topic><topic>PHOTOEMISSION</topic><topic>RESOLUTION</topic><topic>SEMICONDUCTOR MATERIALS</topic><topic>WAVELENGTHS</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Neuhäusler, U.</creatorcontrib><creatorcontrib>Oelsner, A.</creatorcontrib><creatorcontrib>Slieh, J.</creatorcontrib><creatorcontrib>Brzeska, M.</creatorcontrib><creatorcontrib>Wonisch, A.</creatorcontrib><creatorcontrib>Westerwalbesloh, T.</creatorcontrib><creatorcontrib>Brückl, H.</creatorcontrib><creatorcontrib>Schicketanz, M.</creatorcontrib><creatorcontrib>Weber, N.</creatorcontrib><creatorcontrib>Escher, M.</creatorcontrib><creatorcontrib>Merkel, M.</creatorcontrib><creatorcontrib>Schönhense, G.</creatorcontrib><creatorcontrib>Kleineberg, U.</creatorcontrib><creatorcontrib>Heinzmann, U.</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Neuhäusler, U.</au><au>Oelsner, A.</au><au>Slieh, J.</au><au>Brzeska, M.</au><au>Wonisch, A.</au><au>Westerwalbesloh, T.</au><au>Brückl, H.</au><au>Schicketanz, M.</au><au>Weber, N.</au><au>Escher, M.</au><au>Merkel, M.</au><au>Schönhense, G.</au><au>Kleineberg, U.</au><au>Heinzmann, U.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High-resolution actinic defect inspection for extreme ultraviolet lithography multilayer mask blanks by photoemission electron microscopy</atitle><jtitle>Applied physics letters</jtitle><date>2006-01-30</date><risdate>2006</risdate><volume>88</volume><issue>5</issue><spage>053113</spage><epage>053113-3</epage><pages>053113-053113-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>We report on the development and first experimental results of a "at wavelength" full-field imaging technique for defect inspection of multilayer mask blanks for extreme ultraviolet (EUV) lithography. According to the International Semiconductor Roadmap by Sematech, less than
5
×
10
−
3
defects per
cm
2
should be present on such multilayer mask blank to enable mass production of microelectronics using EUV lithography, thus fast high-resolution methods for mask defect inspection and localization are needed. Our approach uses a photoemission electron microscope in a normal incidence illumination mode at 13 nm to image the photoelectron emission induced by the EUV wave field on the multilayer mask blank surface. We show that by these means, buried defects in the multilayer stack can be probed down to a lateral size of 50 nm.</abstract><cop>United States</cop><pub>American Institute of Physics</pub><doi>10.1063/1.2168263</doi></addata></record> |
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| source | AIP Journals Complete; AIP Digital Archive |
| subjects | CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ELECTRON MICROSCOPES ELECTRON MICROSCOPY EXTREME ULTRAVIOLET RADIATION ILLUMINANCE INSPECTION MASS MICROELECTRONICS PHOTOEMISSION RESOLUTION SEMICONDUCTOR MATERIALS WAVELENGTHS |
| title | High-resolution actinic defect inspection for extreme ultraviolet lithography multilayer mask blanks by photoemission electron microscopy |
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