PbS nanocrystal synthesis in Pb-containing silicate glasses
We describe a synthesis of PbS nanocrystals in glasses, involving 150 keV sulfur implantation into Pb-containing silicate glasses at peak concentrations up to 3.6 at. % and postannealing around the glass transition temperature ( 500 - 600 ° C ) . The PbS nanocrystals, whose growth is evidenced by tr...
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| Veröffentlicht in: | Journal of applied physics 2005-11, Vol.98 (10), p.104310-104310-5 |
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| container_end_page | 104310-5 |
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| container_issue | 10 |
| container_start_page | 104310 |
| container_title | Journal of applied physics |
| container_volume | 98 |
| creator | Espiau de Lamaëstre, R. Bernas, H. |
| description | We describe a synthesis of PbS nanocrystals in glasses, involving
150
keV
sulfur implantation into Pb-containing silicate glasses at peak concentrations up to
3.6
at.
%
and postannealing around the glass transition temperature
(
500
-
600
°
C
)
. The PbS nanocrystals, whose growth is evidenced by transmission electron microscopy, display intense photoluminescence (PL) in the
1
-
1.5
μ
m
wavelength range. Besides bypassing the sulfur retention problem occurring in traditional glass fusion techniques, our method improves control over nucleation and growth. The latter is demonstrated by the impact on the PbS nanocrystal PL properties of progressively replacing CaO by ZnO in a S-implanted Pb glass. |
| doi_str_mv | 10.1063/1.2132091 |
| format | Article |
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150
keV
sulfur implantation into Pb-containing silicate glasses at peak concentrations up to
3.6
at.
%
and postannealing around the glass transition temperature
(
500
-
600
°
C
)
. The PbS nanocrystals, whose growth is evidenced by transmission electron microscopy, display intense photoluminescence (PL) in the
1
-
1.5
μ
m
wavelength range. Besides bypassing the sulfur retention problem occurring in traditional glass fusion techniques, our method improves control over nucleation and growth. The latter is demonstrated by the impact on the PbS nanocrystal PL properties of progressively replacing CaO by ZnO in a S-implanted Pb glass.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.2132091</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>United States: American Institute of Physics</publisher><subject>ANNEALING ; CALCIUM OXIDES ; Condensed Matter ; CRYSTAL GROWTH ; GLASS ; ION IMPLANTATION ; KEV RANGE 100-1000 ; LEAD SULFIDES ; MATERIALS SCIENCE ; NANOSTRUCTURES ; PHOTOLUMINESCENCE ; Physics ; SEMICONDUCTOR MATERIALS ; SILICATES ; SULFUR IONS ; SYNTHESIS ; TEMPERATURE DEPENDENCE ; TEMPERATURE RANGE 0400-1000 K ; TRANSITION TEMPERATURE ; TRANSMISSION ELECTRON MICROSCOPY ; ZINC OXIDES</subject><ispartof>Journal of applied physics, 2005-11, Vol.98 (10), p.104310-104310-5</ispartof><rights>2005 American Institute of Physics</rights><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c383t-7e7f58a7b47b61d46331243d49a46dae346e8692c248a60ec3cbedd94ca312ab3</citedby><cites>FETCH-LOGICAL-c383t-7e7f58a7b47b61d46331243d49a46dae346e8692c248a60ec3cbedd94ca312ab3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/jap/article-lookup/doi/10.1063/1.2132091$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>230,314,780,784,794,885,1559,4512,27924,27925,76384,76390</link.rule.ids><backlink>$$Uhttps://hal.in2p3.fr/in2p3-00025407$$DView record in HAL$$Hfree_for_read</backlink><backlink>$$Uhttps://www.osti.gov/biblio/20719809$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Espiau de Lamaëstre, R.</creatorcontrib><creatorcontrib>Bernas, H.</creatorcontrib><title>PbS nanocrystal synthesis in Pb-containing silicate glasses</title><title>Journal of applied physics</title><description>We describe a synthesis of PbS nanocrystals in glasses, involving
150
keV
sulfur implantation into Pb-containing silicate glasses at peak concentrations up to
3.6
at.
%
and postannealing around the glass transition temperature
(
500
-
600
°
C
)
. The PbS nanocrystals, whose growth is evidenced by transmission electron microscopy, display intense photoluminescence (PL) in the
1
-
1.5
μ
m
wavelength range. Besides bypassing the sulfur retention problem occurring in traditional glass fusion techniques, our method improves control over nucleation and growth. The latter is demonstrated by the impact on the PbS nanocrystal PL properties of progressively replacing CaO by ZnO in a S-implanted Pb glass.</description><subject>ANNEALING</subject><subject>CALCIUM OXIDES</subject><subject>Condensed Matter</subject><subject>CRYSTAL GROWTH</subject><subject>GLASS</subject><subject>ION IMPLANTATION</subject><subject>KEV RANGE 100-1000</subject><subject>LEAD SULFIDES</subject><subject>MATERIALS SCIENCE</subject><subject>NANOSTRUCTURES</subject><subject>PHOTOLUMINESCENCE</subject><subject>Physics</subject><subject>SEMICONDUCTOR MATERIALS</subject><subject>SILICATES</subject><subject>SULFUR IONS</subject><subject>SYNTHESIS</subject><subject>TEMPERATURE DEPENDENCE</subject><subject>TEMPERATURE RANGE 0400-1000 K</subject><subject>TRANSITION TEMPERATURE</subject><subject>TRANSMISSION ELECTRON MICROSCOPY</subject><subject>ZINC OXIDES</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><recordid>eNp10M9LwzAUwPEgCs7pwf-g4EmkM7_aJAjCGOqEgQP1HF7TbIvUdPQFYf_9OjrEi6dcPnnv8SXkmtEJo6W4ZxPOBKeGnZARo9rkqijoKRlRylmujTLn5ALxi1LGtDAj8rCs3rMIsXXdDhM0Ge5i2ngMmIWYLavctTFBiCGuMwxNcJB8tm4A0eMlOVtBg_7q-I7J5_PTx2yeL95eXmfTRe6EFilXXq0KDaqSqipZLUshGJeilgZkWYMXsvS6NNxxqaGk3glX-bo20kEPoRJjcjPMbTEFiy4k7zb9XdG7ZDlVzGhqenU3qA00dtuFb-h2toVg59OFDZFvhaV9hUJS9cN6fTto17WInV_9fmHUHkpaZo8le_s42MNqSKGN_-M-p_2T0x5yij0EiHko</recordid><startdate>20051115</startdate><enddate>20051115</enddate><creator>Espiau de Lamaëstre, R.</creator><creator>Bernas, H.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>1XC</scope><scope>OTOTI</scope></search><sort><creationdate>20051115</creationdate><title>PbS nanocrystal synthesis in Pb-containing silicate glasses</title><author>Espiau de Lamaëstre, R. ; Bernas, H.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c383t-7e7f58a7b47b61d46331243d49a46dae346e8692c248a60ec3cbedd94ca312ab3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><topic>ANNEALING</topic><topic>CALCIUM OXIDES</topic><topic>Condensed Matter</topic><topic>CRYSTAL GROWTH</topic><topic>GLASS</topic><topic>ION IMPLANTATION</topic><topic>KEV RANGE 100-1000</topic><topic>LEAD SULFIDES</topic><topic>MATERIALS SCIENCE</topic><topic>NANOSTRUCTURES</topic><topic>PHOTOLUMINESCENCE</topic><topic>Physics</topic><topic>SEMICONDUCTOR MATERIALS</topic><topic>SILICATES</topic><topic>SULFUR IONS</topic><topic>SYNTHESIS</topic><topic>TEMPERATURE DEPENDENCE</topic><topic>TEMPERATURE RANGE 0400-1000 K</topic><topic>TRANSITION TEMPERATURE</topic><topic>TRANSMISSION ELECTRON MICROSCOPY</topic><topic>ZINC OXIDES</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Espiau de Lamaëstre, R.</creatorcontrib><creatorcontrib>Bernas, H.</creatorcontrib><collection>CrossRef</collection><collection>Hyper Article en Ligne (HAL)</collection><collection>OSTI.GOV</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Espiau de Lamaëstre, R.</au><au>Bernas, H.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>PbS nanocrystal synthesis in Pb-containing silicate glasses</atitle><jtitle>Journal of applied physics</jtitle><date>2005-11-15</date><risdate>2005</risdate><volume>98</volume><issue>10</issue><spage>104310</spage><epage>104310-5</epage><pages>104310-104310-5</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>We describe a synthesis of PbS nanocrystals in glasses, involving
150
keV
sulfur implantation into Pb-containing silicate glasses at peak concentrations up to
3.6
at.
%
and postannealing around the glass transition temperature
(
500
-
600
°
C
)
. The PbS nanocrystals, whose growth is evidenced by transmission electron microscopy, display intense photoluminescence (PL) in the
1
-
1.5
μ
m
wavelength range. Besides bypassing the sulfur retention problem occurring in traditional glass fusion techniques, our method improves control over nucleation and growth. The latter is demonstrated by the impact on the PbS nanocrystal PL properties of progressively replacing CaO by ZnO in a S-implanted Pb glass.</abstract><cop>United States</cop><pub>American Institute of Physics</pub><doi>10.1063/1.2132091</doi><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-8979 |
| ispartof | Journal of applied physics, 2005-11, Vol.98 (10), p.104310-104310-5 |
| issn | 0021-8979 1089-7550 |
| language | eng |
| recordid | cdi_osti_scitechconnect_20719809 |
| source | AIP Journals Complete; AIP Digital Archive |
| subjects | ANNEALING CALCIUM OXIDES Condensed Matter CRYSTAL GROWTH GLASS ION IMPLANTATION KEV RANGE 100-1000 LEAD SULFIDES MATERIALS SCIENCE NANOSTRUCTURES PHOTOLUMINESCENCE Physics SEMICONDUCTOR MATERIALS SILICATES SULFUR IONS SYNTHESIS TEMPERATURE DEPENDENCE TEMPERATURE RANGE 0400-1000 K TRANSITION TEMPERATURE TRANSMISSION ELECTRON MICROSCOPY ZINC OXIDES |
| title | PbS nanocrystal synthesis in Pb-containing silicate glasses |
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