Brittle dynamic fracture of crystalline cubic silicon carbide (3C-SiC) via molecular dynamics simulation
Brittle fracture dynamics for three low-index crack surfaces, i.e., (110), (111), and (100), in crystalline cubic silicon carbide (3C-SiC) is studied using molecular dynamics simulation. The results exhibit significant orientation dependence: (110) fracture propagates in a cleavage manner; (111) fra...
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| Veröffentlicht in: | Journal of applied physics 2005-11, Vol.98 (10), p.103524-103524-4 |
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| container_end_page | 103524-4 |
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| container_issue | 10 |
| container_start_page | 103524 |
| container_title | Journal of applied physics |
| container_volume | 98 |
| creator | Kikuchi, Hideaki Kalia, Rajiv K. Nakano, Aiichiro Vashishta, Priya Branicio, Paulo S. Shimojo, Fuyuki |
| description | Brittle fracture dynamics for three low-index crack surfaces, i.e., (110), (111), and (100), in crystalline cubic silicon carbide (3C-SiC) is studied using molecular dynamics simulation. The results exhibit significant orientation dependence: (110) fracture propagates in a cleavage manner; (111) fracture involves slip in the
{
11
1
¯
}
planes; and crack branching is observed in (001) fracture. Calculated critical energy release rates, which characterize fracture toughness, are compared with available experimental and
ab initio
calculation data. |
| doi_str_mv | 10.1063/1.2135896 |
| format | Article |
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{
11
1
¯
}
planes; and crack branching is observed in (001) fracture. Calculated critical energy release rates, which characterize fracture toughness, are compared with available experimental and
ab initio
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{
11
1
¯
}
planes; and crack branching is observed in (001) fracture. Calculated critical energy release rates, which characterize fracture toughness, are compared with available experimental and
ab initio
calculation data.</description><subject>CLEAVAGE</subject><subject>CRACKS</subject><subject>FRACTURE MECHANICS</subject><subject>FRACTURE PROPERTIES</subject><subject>FRACTURES</subject><subject>MATERIALS SCIENCE</subject><subject>MOLECULAR DYNAMICS METHOD</subject><subject>SEMICONDUCTOR MATERIALS</subject><subject>SILICON CARBIDES</subject><subject>SIMULATION</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><recordid>eNp1kMtKAzEUhoMoWKsL3yDgxi6m5tLMJBtBB29QcGH3ITmT0MhcJEmFvr1TOy5dHTjn4-f8H0LXlCwpKfkdXTLKhVTlCZpRIlVRCUFO0YwQRgupKnWOLlL6JIRSydUMbR9jyLl1uNn3pguAfTSQd9HhwWOI-5RN24beYdjZ8ZpCG2DoMZhoQ-PwLa-Lj1Av8HcwuBtaB7vWxL-wNPLduMhh6C_RmTdtclfTnKPN89Omfi3W7y9v9cO6AF7JXDDhBWGNd95SKayTlIKywjO2kkZabldMGGuNByaF49BAqcpKVLIqKeOez9HNMXZIOegEITvYjh_3DrJmpKJKEjFSiyMFcUgpOq-_YuhM3GtK9MGjpnryOLL3R_YQ9lvlf3iSqaf--iCT_wCDQHsW</recordid><startdate>20051115</startdate><enddate>20051115</enddate><creator>Kikuchi, Hideaki</creator><creator>Kalia, Rajiv K.</creator><creator>Nakano, Aiichiro</creator><creator>Vashishta, Priya</creator><creator>Branicio, Paulo S.</creator><creator>Shimojo, Fuyuki</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>20051115</creationdate><title>Brittle dynamic fracture of crystalline cubic silicon carbide (3C-SiC) via molecular dynamics simulation</title><author>Kikuchi, Hideaki ; Kalia, Rajiv K. ; Nakano, Aiichiro ; Vashishta, Priya ; Branicio, Paulo S. ; Shimojo, Fuyuki</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c378t-25f502dfefb185be811c9b5f2248a8b3b425abbafc285e3cdc696757876123f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><topic>CLEAVAGE</topic><topic>CRACKS</topic><topic>FRACTURE MECHANICS</topic><topic>FRACTURE PROPERTIES</topic><topic>FRACTURES</topic><topic>MATERIALS SCIENCE</topic><topic>MOLECULAR DYNAMICS METHOD</topic><topic>SEMICONDUCTOR MATERIALS</topic><topic>SILICON CARBIDES</topic><topic>SIMULATION</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kikuchi, Hideaki</creatorcontrib><creatorcontrib>Kalia, Rajiv K.</creatorcontrib><creatorcontrib>Nakano, Aiichiro</creatorcontrib><creatorcontrib>Vashishta, Priya</creatorcontrib><creatorcontrib>Branicio, Paulo S.</creatorcontrib><creatorcontrib>Shimojo, Fuyuki</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kikuchi, Hideaki</au><au>Kalia, Rajiv K.</au><au>Nakano, Aiichiro</au><au>Vashishta, Priya</au><au>Branicio, Paulo S.</au><au>Shimojo, Fuyuki</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Brittle dynamic fracture of crystalline cubic silicon carbide (3C-SiC) via molecular dynamics simulation</atitle><jtitle>Journal of applied physics</jtitle><date>2005-11-15</date><risdate>2005</risdate><volume>98</volume><issue>10</issue><spage>103524</spage><epage>103524-4</epage><pages>103524-103524-4</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>Brittle fracture dynamics for three low-index crack surfaces, i.e., (110), (111), and (100), in crystalline cubic silicon carbide (3C-SiC) is studied using molecular dynamics simulation. The results exhibit significant orientation dependence: (110) fracture propagates in a cleavage manner; (111) fracture involves slip in the
{
11
1
¯
}
planes; and crack branching is observed in (001) fracture. Calculated critical energy release rates, which characterize fracture toughness, are compared with available experimental and
ab initio
calculation data.</abstract><cop>United States</cop><pub>American Institute of Physics</pub><doi>10.1063/1.2135896</doi></addata></record> |
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| language | eng |
| recordid | cdi_osti_scitechconnect_20719805 |
| source | AIP Journals Complete; AIP Digital Archive |
| subjects | CLEAVAGE CRACKS FRACTURE MECHANICS FRACTURE PROPERTIES FRACTURES MATERIALS SCIENCE MOLECULAR DYNAMICS METHOD SEMICONDUCTOR MATERIALS SILICON CARBIDES SIMULATION |
| title | Brittle dynamic fracture of crystalline cubic silicon carbide (3C-SiC) via molecular dynamics simulation |
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