Long-range order in thin epitaxial Fe{sub 3}Si films grown on GaAs(001)
As-grown thin epitaxial Fe{sub 3}Si films fabricated by molecular beam epitaxy on GaAs(001) are studied by grazing incidence x-ray diffraction. The long-range order parameters of the films of different stoichiometry are determined by measuring fundamental and superlattice crystal truncation rods and...
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Veröffentlicht in: | Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2005-08, Vol.72 (7) |
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Sprache: | eng |
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