Long-range order in thin epitaxial Fe{sub 3}Si films grown on GaAs(001)
As-grown thin epitaxial Fe{sub 3}Si films fabricated by molecular beam epitaxy on GaAs(001) are studied by grazing incidence x-ray diffraction. The long-range order parameters of the films of different stoichiometry are determined by measuring fundamental and superlattice crystal truncation rods and...
Gespeichert in:
| Veröffentlicht in: | Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2005-08, Vol.72 (7) |
|---|---|
| Hauptverfasser: | , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | 7 |
| container_start_page | |
| container_title | Physical review. B, Condensed matter and materials physics |
| container_volume | 72 |
| creator | Jenichen, B. Kaganer, V.M. Herfort, J. Satapathy, D.K. Schoenherr, H.P. Braun, W. Ploog, K.H. |
| description | As-grown thin epitaxial Fe{sub 3}Si films fabricated by molecular beam epitaxy on GaAs(001) are studied by grazing incidence x-ray diffraction. The long-range order parameters of the films of different stoichiometry are determined by measuring fundamental and superlattice crystal truncation rods and comparing them to simulations in dynamical approximation. Two order parameters, associated with the degree of migration of Si atoms into different Fe sublattices, are obtained. A residual intermixing of the sublattices is found, even near complete stoichiometry. The relative positions of the Fe{sub 3}Si and GaAs lattices are determined. Fe atoms in Fe{sub 3}Si are located at the positions of the Ga atoms in GaAs, with an additional shift of 0.1{+-}0.04 A of the tetragonally distorted Fe{sub 3}Si lattice normal to the interface. |
| doi_str_mv | 10.1103/PhysRevB.72.075329 |
| format | Article |
| fullrecord | <record><control><sourceid>osti</sourceid><recordid>TN_cdi_osti_scitechconnect_20719331</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>20719331</sourcerecordid><originalsourceid>FETCH-osti_scitechconnect_207193313</originalsourceid><addsrcrecordid>eNqNjLtuwkAQRVcRkXgkP0A1UhpS2JnZxTIuAfEoKFCSIh3aOIu9kdmNPMtLiH_HRT6A5p5THF0h-oQxEaq3dXnmd3OYxKmMMU2UzB5Eh5IEI6mSr1bjmI0iJElt0WX-RaRhNpQdsVh5V0S1doUBX_-YGqyDUDZj_mzQJ6srmJsL779BXT8sbG21Yyhqf3TgHSz0mAfN2euTeNzqis3zP3viZT77nC4jz8FuOLfB5GXunTN52EhMKVOK1H3VDfdrQiw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Long-range order in thin epitaxial Fe{sub 3}Si films grown on GaAs(001)</title><source>American Physical Society Journals</source><creator>Jenichen, B. ; Kaganer, V.M. ; Herfort, J. ; Satapathy, D.K. ; Schoenherr, H.P. ; Braun, W. ; Ploog, K.H.</creator><creatorcontrib>Jenichen, B. ; Kaganer, V.M. ; Herfort, J. ; Satapathy, D.K. ; Schoenherr, H.P. ; Braun, W. ; Ploog, K.H.</creatorcontrib><description>As-grown thin epitaxial Fe{sub 3}Si films fabricated by molecular beam epitaxy on GaAs(001) are studied by grazing incidence x-ray diffraction. The long-range order parameters of the films of different stoichiometry are determined by measuring fundamental and superlattice crystal truncation rods and comparing them to simulations in dynamical approximation. Two order parameters, associated with the degree of migration of Si atoms into different Fe sublattices, are obtained. A residual intermixing of the sublattices is found, even near complete stoichiometry. The relative positions of the Fe{sub 3}Si and GaAs lattices are determined. Fe atoms in Fe{sub 3}Si are located at the positions of the Ga atoms in GaAs, with an additional shift of 0.1{+-}0.04 A of the tetragonally distorted Fe{sub 3}Si lattice normal to the interface.</description><identifier>ISSN: 1098-0121</identifier><identifier>EISSN: 1550-235X</identifier><identifier>DOI: 10.1103/PhysRevB.72.075329</identifier><language>eng</language><publisher>United States</publisher><subject>ATOMS ; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ; CRYSTAL GROWTH ; CRYSTAL STRUCTURE ; CRYSTALS ; FERROMAGNETIC MATERIALS ; GALLIUM ARSENIDES ; INTERFACES ; IRON SILICIDES ; LAYERS ; MOLECULAR BEAM EPITAXY ; ORDER PARAMETERS ; SEMICONDUCTOR MATERIALS ; SIMULATION ; STOICHIOMETRY ; SUPERLATTICES ; X-RAY DIFFRACTION</subject><ispartof>Physical review. B, Condensed matter and materials physics, 2005-08, Vol.72 (7)</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,776,780,881,27901,27902</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/20719331$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Jenichen, B.</creatorcontrib><creatorcontrib>Kaganer, V.M.</creatorcontrib><creatorcontrib>Herfort, J.</creatorcontrib><creatorcontrib>Satapathy, D.K.</creatorcontrib><creatorcontrib>Schoenherr, H.P.</creatorcontrib><creatorcontrib>Braun, W.</creatorcontrib><creatorcontrib>Ploog, K.H.</creatorcontrib><title>Long-range order in thin epitaxial Fe{sub 3}Si films grown on GaAs(001)</title><title>Physical review. B, Condensed matter and materials physics</title><description>As-grown thin epitaxial Fe{sub 3}Si films fabricated by molecular beam epitaxy on GaAs(001) are studied by grazing incidence x-ray diffraction. The long-range order parameters of the films of different stoichiometry are determined by measuring fundamental and superlattice crystal truncation rods and comparing them to simulations in dynamical approximation. Two order parameters, associated with the degree of migration of Si atoms into different Fe sublattices, are obtained. A residual intermixing of the sublattices is found, even near complete stoichiometry. The relative positions of the Fe{sub 3}Si and GaAs lattices are determined. Fe atoms in Fe{sub 3}Si are located at the positions of the Ga atoms in GaAs, with an additional shift of 0.1{+-}0.04 A of the tetragonally distorted Fe{sub 3}Si lattice normal to the interface.</description><subject>ATOMS</subject><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</subject><subject>CRYSTAL GROWTH</subject><subject>CRYSTAL STRUCTURE</subject><subject>CRYSTALS</subject><subject>FERROMAGNETIC MATERIALS</subject><subject>GALLIUM ARSENIDES</subject><subject>INTERFACES</subject><subject>IRON SILICIDES</subject><subject>LAYERS</subject><subject>MOLECULAR BEAM EPITAXY</subject><subject>ORDER PARAMETERS</subject><subject>SEMICONDUCTOR MATERIALS</subject><subject>SIMULATION</subject><subject>STOICHIOMETRY</subject><subject>SUPERLATTICES</subject><subject>X-RAY DIFFRACTION</subject><issn>1098-0121</issn><issn>1550-235X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><recordid>eNqNjLtuwkAQRVcRkXgkP0A1UhpS2JnZxTIuAfEoKFCSIh3aOIu9kdmNPMtLiH_HRT6A5p5THF0h-oQxEaq3dXnmd3OYxKmMMU2UzB5Eh5IEI6mSr1bjmI0iJElt0WX-RaRhNpQdsVh5V0S1doUBX_-YGqyDUDZj_mzQJ6srmJsL779BXT8sbG21Yyhqf3TgHSz0mAfN2euTeNzqis3zP3viZT77nC4jz8FuOLfB5GXunTN52EhMKVOK1H3VDfdrQiw</recordid><startdate>20050815</startdate><enddate>20050815</enddate><creator>Jenichen, B.</creator><creator>Kaganer, V.M.</creator><creator>Herfort, J.</creator><creator>Satapathy, D.K.</creator><creator>Schoenherr, H.P.</creator><creator>Braun, W.</creator><creator>Ploog, K.H.</creator><scope>OTOTI</scope></search><sort><creationdate>20050815</creationdate><title>Long-range order in thin epitaxial Fe{sub 3}Si films grown on GaAs(001)</title><author>Jenichen, B. ; Kaganer, V.M. ; Herfort, J. ; Satapathy, D.K. ; Schoenherr, H.P. ; Braun, W. ; Ploog, K.H.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-osti_scitechconnect_207193313</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><topic>ATOMS</topic><topic>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</topic><topic>CRYSTAL GROWTH</topic><topic>CRYSTAL STRUCTURE</topic><topic>CRYSTALS</topic><topic>FERROMAGNETIC MATERIALS</topic><topic>GALLIUM ARSENIDES</topic><topic>INTERFACES</topic><topic>IRON SILICIDES</topic><topic>LAYERS</topic><topic>MOLECULAR BEAM EPITAXY</topic><topic>ORDER PARAMETERS</topic><topic>SEMICONDUCTOR MATERIALS</topic><topic>SIMULATION</topic><topic>STOICHIOMETRY</topic><topic>SUPERLATTICES</topic><topic>X-RAY DIFFRACTION</topic><toplevel>online_resources</toplevel><creatorcontrib>Jenichen, B.</creatorcontrib><creatorcontrib>Kaganer, V.M.</creatorcontrib><creatorcontrib>Herfort, J.</creatorcontrib><creatorcontrib>Satapathy, D.K.</creatorcontrib><creatorcontrib>Schoenherr, H.P.</creatorcontrib><creatorcontrib>Braun, W.</creatorcontrib><creatorcontrib>Ploog, K.H.</creatorcontrib><collection>OSTI.GOV</collection><jtitle>Physical review. B, Condensed matter and materials physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Jenichen, B.</au><au>Kaganer, V.M.</au><au>Herfort, J.</au><au>Satapathy, D.K.</au><au>Schoenherr, H.P.</au><au>Braun, W.</au><au>Ploog, K.H.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Long-range order in thin epitaxial Fe{sub 3}Si films grown on GaAs(001)</atitle><jtitle>Physical review. B, Condensed matter and materials physics</jtitle><date>2005-08-15</date><risdate>2005</risdate><volume>72</volume><issue>7</issue><issn>1098-0121</issn><eissn>1550-235X</eissn><abstract>As-grown thin epitaxial Fe{sub 3}Si films fabricated by molecular beam epitaxy on GaAs(001) are studied by grazing incidence x-ray diffraction. The long-range order parameters of the films of different stoichiometry are determined by measuring fundamental and superlattice crystal truncation rods and comparing them to simulations in dynamical approximation. Two order parameters, associated with the degree of migration of Si atoms into different Fe sublattices, are obtained. A residual intermixing of the sublattices is found, even near complete stoichiometry. The relative positions of the Fe{sub 3}Si and GaAs lattices are determined. Fe atoms in Fe{sub 3}Si are located at the positions of the Ga atoms in GaAs, with an additional shift of 0.1{+-}0.04 A of the tetragonally distorted Fe{sub 3}Si lattice normal to the interface.</abstract><cop>United States</cop><doi>10.1103/PhysRevB.72.075329</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1098-0121 |
| ispartof | Physical review. B, Condensed matter and materials physics, 2005-08, Vol.72 (7) |
| issn | 1098-0121 1550-235X |
| language | eng |
| recordid | cdi_osti_scitechconnect_20719331 |
| source | American Physical Society Journals |
| subjects | ATOMS CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY CRYSTAL GROWTH CRYSTAL STRUCTURE CRYSTALS FERROMAGNETIC MATERIALS GALLIUM ARSENIDES INTERFACES IRON SILICIDES LAYERS MOLECULAR BEAM EPITAXY ORDER PARAMETERS SEMICONDUCTOR MATERIALS SIMULATION STOICHIOMETRY SUPERLATTICES X-RAY DIFFRACTION |
| title | Long-range order in thin epitaxial Fe{sub 3}Si films grown on GaAs(001) |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-08T15%3A44%3A12IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-osti&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Long-range%20order%20in%20thin%20epitaxial%20Fe%7Bsub%203%7DSi%20films%20grown%20on%20GaAs(001)&rft.jtitle=Physical%20review.%20B,%20Condensed%20matter%20and%20materials%20physics&rft.au=Jenichen,%20B.&rft.date=2005-08-15&rft.volume=72&rft.issue=7&rft.issn=1098-0121&rft.eissn=1550-235X&rft_id=info:doi/10.1103/PhysRevB.72.075329&rft_dat=%3Costi%3E20719331%3C/osti%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |