Atomic Layer Deposition of High k Dielectric and Metal Gate Stacks for MOS Devices

High-k gate stack fabrication via atomic layer deposition (ALD) of ultra thin HfO2 and HfxSi1-xO2 films is demonstrated utilizing metal-amide precursors and ozone as an oxidant. High resolution transmission electron microscopy (TEM) shows that films near 2.0 nm are reproducible. X-ray reflectivity (...

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Veröffentlicht in:	AIP conference proceedings 2005-09, Vol.788 (1), p.69-72
Hauptverfasser:	Senzaki, Yoshihide, Choi, Kisik, Kirsch, Paul D, Majhi, Prashant, Lee, Byoung Hun
Format:	Artikel
Sprache:	eng
Schlagworte:	DIELECTRIC MATERIALS EPITAXY HAFNIUM NITRIDES INTEGRATED CIRCUITS LAYERS LEAKAGE CURRENT MATERIALS SCIENCE MOBILITY OXIDIZERS PHYSICAL VAPOR DEPOSITION PRECURSOR REFLECTION REFLECTIVITY RUTHERFORD BACKSCATTERING SPECTROSCOPY SEMICONDUCTOR MATERIALS SILICON NITRIDES SILICON OXIDES THIN FILMS TITANIUM NITRIDES TRANSMISSION ELECTRON MICROSCOPY X RADIATION
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