X-ray diffraction peak profiles from threading dislocations in GaN epitaxial films
We analyze the line shape of x-ray diffraction profiles of GaN epitaxial layers with large densities of randomly distributed threading dislocations. The peaks are Gaussian only in the central, most intense part of the peak, while the tails obey a power law. The q{sup -3} decay typical for random dis...
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| Veröffentlicht in: | Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2005-07, Vol.72 (4), p.045423.1-045423.12, Article 045423 |
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| container_end_page | 045423.12 |
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| container_issue | 4 |
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| container_title | Physical review. B, Condensed matter and materials physics |
| container_volume | 72 |
| creator | KAGANER, V. M BRANDT, O TRAMPERT, A PLOOG, K. H |
| description | We analyze the line shape of x-ray diffraction profiles of GaN epitaxial layers with large densities of randomly distributed threading dislocations. The peaks are Gaussian only in the central, most intense part of the peak, while the tails obey a power law. The q{sup -3} decay typical for random dislocations is observed in the rocking curves with open detector. The entire profile is well fitted by a restricted random dislocation distribution. The densities of both edge and screw threading dislocations and the ranges of dislocation correlations are obtained. |
| doi_str_mv | 10.1103/physrevb.72.045423 |
| format | Article |
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The densities of both edge and screw threading dislocations and the ranges of dislocation correlations are obtained.</description><identifier>ISSN: 1098-0121</identifier><identifier>EISSN: 1550-235X</identifier><identifier>DOI: 10.1103/physrevb.72.045423</identifier><language>eng</language><publisher>Ridge, NY: American Physical Society</publisher><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ; Condensed matter: structure, mechanical and thermal properties ; CORRELATIONS ; Defects and impurities: doping, implantation, distribution, concentration, etc ; DENSITY ; DISTRIBUTION ; EDGE DISLOCATIONS ; EPITAXY ; Exact sciences and technology ; GALLIUM NITRIDES ; LAYERS ; NEUTRON DIFFRACTION ; Physics ; RANDOMNESS ; SCREW DISLOCATIONS ; SEMICONDUCTOR MATERIALS ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) ; Thin film structure and morphology ; X-RAY DIFFRACTION</subject><ispartof>Physical review. 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M</creatorcontrib><creatorcontrib>BRANDT, O</creatorcontrib><creatorcontrib>TRAMPERT, A</creatorcontrib><creatorcontrib>PLOOG, K. H</creatorcontrib><title>X-ray diffraction peak profiles from threading dislocations in GaN epitaxial films</title><title>Physical review. B, Condensed matter and materials physics</title><description>We analyze the line shape of x-ray diffraction profiles of GaN epitaxial layers with large densities of randomly distributed threading dislocations. The peaks are Gaussian only in the central, most intense part of the peak, while the tails obey a power law. The q{sup -3} decay typical for random dislocations is observed in the rocking curves with open detector. The entire profile is well fitted by a restricted random dislocation distribution. 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M</creatorcontrib><creatorcontrib>BRANDT, O</creatorcontrib><creatorcontrib>TRAMPERT, A</creatorcontrib><creatorcontrib>PLOOG, K. H</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Physical review. B, Condensed matter and materials physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>KAGANER, V. M</au><au>BRANDT, O</au><au>TRAMPERT, A</au><au>PLOOG, K. H</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>X-ray diffraction peak profiles from threading dislocations in GaN epitaxial films</atitle><jtitle>Physical review. B, Condensed matter and materials physics</jtitle><date>2005-07-15</date><risdate>2005</risdate><volume>72</volume><issue>4</issue><spage>045423.1</spage><epage>045423.12</epage><pages>045423.1-045423.12</pages><artnum>045423</artnum><issn>1098-0121</issn><eissn>1550-235X</eissn><abstract>We analyze the line shape of x-ray diffraction profiles of GaN epitaxial layers with large densities of randomly distributed threading dislocations. The peaks are Gaussian only in the central, most intense part of the peak, while the tails obey a power law. The q{sup -3} decay typical for random dislocations is observed in the rocking curves with open detector. The entire profile is well fitted by a restricted random dislocation distribution. The densities of both edge and screw threading dislocations and the ranges of dislocation correlations are obtained.</abstract><cop>Ridge, NY</cop><pub>American Physical Society</pub><doi>10.1103/physrevb.72.045423</doi></addata></record> |
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| ispartof | Physical review. B, Condensed matter and materials physics, 2005-07, Vol.72 (4), p.045423.1-045423.12, Article 045423 |
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| source | American Physical Society Journals |
| subjects | CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY Condensed matter: structure, mechanical and thermal properties CORRELATIONS Defects and impurities: doping, implantation, distribution, concentration, etc DENSITY DISTRIBUTION EDGE DISLOCATIONS EPITAXY Exact sciences and technology GALLIUM NITRIDES LAYERS NEUTRON DIFFRACTION Physics RANDOMNESS SCREW DISLOCATIONS SEMICONDUCTOR MATERIALS Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology X-RAY DIFFRACTION |
| title | X-ray diffraction peak profiles from threading dislocations in GaN epitaxial films |
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