Electron-positron momentum distributions associated with isolated silicon vacancies in 3C-SiC
Two-dimensional angular correlation of annihilation radiation (2D-ACAR) and coincidence Doppler broadening (CDB) of annihilation radiation measurements have been performed on electron-irradiated n-type 3C-SiC in which isolated silicon vacancies are responsible for positron trapping. After irradiatio...
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| Veröffentlicht in: | Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2005-07, Vol.72 (4), p.045204.1-045204.6 |
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| container_end_page | 045204.6 |
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| container_issue | 4 |
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| container_title | Physical review. B, Condensed matter and materials physics |
| container_volume | 72 |
| creator | KAWASUSO, A YOSHIKAWA, M ITOH, H CHIBA, T HIGUCHI, T BETSUYAKU, K REDMANN, F KRAUSE-REHBERG, R |
| description | Two-dimensional angular correlation of annihilation radiation (2D-ACAR) and coincidence Doppler broadening (CDB) of annihilation radiation measurements have been performed on electron-irradiated n-type 3C-SiC in which isolated silicon vacancies are responsible for positron trapping. After irradiation, the intensity of the CDB spectrum increased and decreased in low- and high-momentum regions, respectively. These features were explained by a theoretical calculation considering silicon vacancies. The central region of the 2D-ACAR spectra became isotropic after irradiation, while the overall anisotropies extending within the Jones zone were conserved suggesting that isolated silicon vacancies have tetrahedral symmetry, as expected from a previous electron spin resonance study. |
| doi_str_mv | 10.1103/PhysRevB.72.045204 |
| format | Article |
| fullrecord | <record><control><sourceid>pascalfrancis_osti_</sourceid><recordid>TN_cdi_osti_scitechconnect_20719162</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>17092250</sourcerecordid><originalsourceid>FETCH-LOGICAL-o213t-51e40c5a6037214349268594980ea9ef8b422f9ba91f5dff5150a32d820a15593</originalsourceid><addsrcrecordid>eNotT01Lw0AUXETBWv0DngLiMfHt290me9RQP6Cg-AFeJGw3G7qSZEvettJ_b2o9zQzMDDOMXXLIOAdx87La0avb3mU5ZiAVgjxiE64UpCjU5_HIQRcpcOSn7IzoG4BLLXHCvuats3EIfboO5Pck6ULn-rjpktpTHPxyE33oKTFEwXoTXZ38-LhKPIX2T5FvvR1zW2NNb72jxPeJKNM3X56zk8a05C7-cco-7ufv5WO6eH54Km8XaUAuYqq4k2CVmYHIkUshNc4KpaUuwBntmmIpERu9NJo3qm4axRUYgXWBYMaTWkzZ1aE3UPQVWR-dXY2b-vFbhZBzzWc4uq4PrrUha9pm2M-laj34zgy7iuegERWIX5puZBI</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Electron-positron momentum distributions associated with isolated silicon vacancies in 3C-SiC</title><source>American Physical Society Journals</source><creator>KAWASUSO, A ; YOSHIKAWA, M ; ITOH, H ; CHIBA, T ; HIGUCHI, T ; BETSUYAKU, K ; REDMANN, F ; KRAUSE-REHBERG, R</creator><creatorcontrib>KAWASUSO, A ; YOSHIKAWA, M ; ITOH, H ; CHIBA, T ; HIGUCHI, T ; BETSUYAKU, K ; REDMANN, F ; KRAUSE-REHBERG, R</creatorcontrib><description>Two-dimensional angular correlation of annihilation radiation (2D-ACAR) and coincidence Doppler broadening (CDB) of annihilation radiation measurements have been performed on electron-irradiated n-type 3C-SiC in which isolated silicon vacancies are responsible for positron trapping. After irradiation, the intensity of the CDB spectrum increased and decreased in low- and high-momentum regions, respectively. These features were explained by a theoretical calculation considering silicon vacancies. The central region of the 2D-ACAR spectra became isotropic after irradiation, while the overall anisotropies extending within the Jones zone were conserved suggesting that isolated silicon vacancies have tetrahedral symmetry, as expected from a previous electron spin resonance study.</description><identifier>ISSN: 1098-0121</identifier><identifier>EISSN: 1550-235X</identifier><identifier>DOI: 10.1103/PhysRevB.72.045204</identifier><language>eng</language><publisher>Ridge, NY: American Physical Society</publisher><subject>ANGULAR CORRELATION ; ANISOTROPY ; ANNIHILATION ; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Condensed matter: structure, mechanical and thermal properties ; CRYSTALS ; Defects and impurities in crystals; microstructure ; DISTRIBUTION ; DOPPLER BROADENING ; ELECTRON BEAMS ; ELECTRON SPIN RESONANCE ; ELECTRONS ; EMISSION SPECTRA ; Exact sciences and technology ; IRRADIATION ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Other interactions of matter with particles and radiation ; Physics ; Point defects (vacancies, interstitials, color centers, etc.) and defect clusters ; POSITRONS ; SEMICONDUCTOR MATERIALS ; SILICON ; SILICON COMPOUNDS ; Structure of solids and liquids; crystallography ; SYMMETRY ; TRAPPING ; VACANCIES ; ZONES</subject><ispartof>Physical review. B, Condensed matter and materials physics, 2005-07, Vol.72 (4), p.045204.1-045204.6</ispartof><rights>2005 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,780,784,885,27923,27924</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=17092250$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://www.osti.gov/biblio/20719162$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>KAWASUSO, A</creatorcontrib><creatorcontrib>YOSHIKAWA, M</creatorcontrib><creatorcontrib>ITOH, H</creatorcontrib><creatorcontrib>CHIBA, T</creatorcontrib><creatorcontrib>HIGUCHI, T</creatorcontrib><creatorcontrib>BETSUYAKU, K</creatorcontrib><creatorcontrib>REDMANN, F</creatorcontrib><creatorcontrib>KRAUSE-REHBERG, R</creatorcontrib><title>Electron-positron momentum distributions associated with isolated silicon vacancies in 3C-SiC</title><title>Physical review. B, Condensed matter and materials physics</title><description>Two-dimensional angular correlation of annihilation radiation (2D-ACAR) and coincidence Doppler broadening (CDB) of annihilation radiation measurements have been performed on electron-irradiated n-type 3C-SiC in which isolated silicon vacancies are responsible for positron trapping. After irradiation, the intensity of the CDB spectrum increased and decreased in low- and high-momentum regions, respectively. These features were explained by a theoretical calculation considering silicon vacancies. The central region of the 2D-ACAR spectra became isotropic after irradiation, while the overall anisotropies extending within the Jones zone were conserved suggesting that isolated silicon vacancies have tetrahedral symmetry, as expected from a previous electron spin resonance study.</description><subject>ANGULAR CORRELATION</subject><subject>ANISOTROPY</subject><subject>ANNIHILATION</subject><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>CRYSTALS</subject><subject>Defects and impurities in crystals; microstructure</subject><subject>DISTRIBUTION</subject><subject>DOPPLER BROADENING</subject><subject>ELECTRON BEAMS</subject><subject>ELECTRON SPIN RESONANCE</subject><subject>ELECTRONS</subject><subject>EMISSION SPECTRA</subject><subject>Exact sciences and technology</subject><subject>IRRADIATION</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Other interactions of matter with particles and radiation</subject><subject>Physics</subject><subject>Point defects (vacancies, interstitials, color centers, etc.) and defect clusters</subject><subject>POSITRONS</subject><subject>SEMICONDUCTOR MATERIALS</subject><subject>SILICON</subject><subject>SILICON COMPOUNDS</subject><subject>Structure of solids and liquids; crystallography</subject><subject>SYMMETRY</subject><subject>TRAPPING</subject><subject>VACANCIES</subject><subject>ZONES</subject><issn>1098-0121</issn><issn>1550-235X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><recordid>eNotT01Lw0AUXETBWv0DngLiMfHt290me9RQP6Cg-AFeJGw3G7qSZEvettJ_b2o9zQzMDDOMXXLIOAdx87La0avb3mU5ZiAVgjxiE64UpCjU5_HIQRcpcOSn7IzoG4BLLXHCvuats3EIfboO5Pck6ULn-rjpktpTHPxyE33oKTFEwXoTXZ38-LhKPIX2T5FvvR1zW2NNb72jxPeJKNM3X56zk8a05C7-cco-7ufv5WO6eH54Km8XaUAuYqq4k2CVmYHIkUshNc4KpaUuwBntmmIpERu9NJo3qm4axRUYgXWBYMaTWkzZ1aE3UPQVWR-dXY2b-vFbhZBzzWc4uq4PrrUha9pm2M-laj34zgy7iuegERWIX5puZBI</recordid><startdate>20050715</startdate><enddate>20050715</enddate><creator>KAWASUSO, A</creator><creator>YOSHIKAWA, M</creator><creator>ITOH, H</creator><creator>CHIBA, T</creator><creator>HIGUCHI, T</creator><creator>BETSUYAKU, K</creator><creator>REDMANN, F</creator><creator>KRAUSE-REHBERG, R</creator><general>American Physical Society</general><scope>IQODW</scope><scope>OTOTI</scope></search><sort><creationdate>20050715</creationdate><title>Electron-positron momentum distributions associated with isolated silicon vacancies in 3C-SiC</title><author>KAWASUSO, A ; YOSHIKAWA, M ; ITOH, H ; CHIBA, T ; HIGUCHI, T ; BETSUYAKU, K ; REDMANN, F ; KRAUSE-REHBERG, R</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-o213t-51e40c5a6037214349268594980ea9ef8b422f9ba91f5dff5150a32d820a15593</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><topic>ANGULAR CORRELATION</topic><topic>ANISOTROPY</topic><topic>ANNIHILATION</topic><topic>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>CRYSTALS</topic><topic>Defects and impurities in crystals; microstructure</topic><topic>DISTRIBUTION</topic><topic>DOPPLER BROADENING</topic><topic>ELECTRON BEAMS</topic><topic>ELECTRON SPIN RESONANCE</topic><topic>ELECTRONS</topic><topic>EMISSION SPECTRA</topic><topic>Exact sciences and technology</topic><topic>IRRADIATION</topic><topic>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</topic><topic>Other interactions of matter with particles and radiation</topic><topic>Physics</topic><topic>Point defects (vacancies, interstitials, color centers, etc.) and defect clusters</topic><topic>POSITRONS</topic><topic>SEMICONDUCTOR MATERIALS</topic><topic>SILICON</topic><topic>SILICON COMPOUNDS</topic><topic>Structure of solids and liquids; crystallography</topic><topic>SYMMETRY</topic><topic>TRAPPING</topic><topic>VACANCIES</topic><topic>ZONES</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>KAWASUSO, A</creatorcontrib><creatorcontrib>YOSHIKAWA, M</creatorcontrib><creatorcontrib>ITOH, H</creatorcontrib><creatorcontrib>CHIBA, T</creatorcontrib><creatorcontrib>HIGUCHI, T</creatorcontrib><creatorcontrib>BETSUYAKU, K</creatorcontrib><creatorcontrib>REDMANN, F</creatorcontrib><creatorcontrib>KRAUSE-REHBERG, R</creatorcontrib><collection>Pascal-Francis</collection><collection>OSTI.GOV</collection><jtitle>Physical review. B, Condensed matter and materials physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>KAWASUSO, A</au><au>YOSHIKAWA, M</au><au>ITOH, H</au><au>CHIBA, T</au><au>HIGUCHI, T</au><au>BETSUYAKU, K</au><au>REDMANN, F</au><au>KRAUSE-REHBERG, R</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electron-positron momentum distributions associated with isolated silicon vacancies in 3C-SiC</atitle><jtitle>Physical review. B, Condensed matter and materials physics</jtitle><date>2005-07-15</date><risdate>2005</risdate><volume>72</volume><issue>4</issue><spage>045204.1</spage><epage>045204.6</epage><pages>045204.1-045204.6</pages><issn>1098-0121</issn><eissn>1550-235X</eissn><abstract>Two-dimensional angular correlation of annihilation radiation (2D-ACAR) and coincidence Doppler broadening (CDB) of annihilation radiation measurements have been performed on electron-irradiated n-type 3C-SiC in which isolated silicon vacancies are responsible for positron trapping. After irradiation, the intensity of the CDB spectrum increased and decreased in low- and high-momentum regions, respectively. These features were explained by a theoretical calculation considering silicon vacancies. The central region of the 2D-ACAR spectra became isotropic after irradiation, while the overall anisotropies extending within the Jones zone were conserved suggesting that isolated silicon vacancies have tetrahedral symmetry, as expected from a previous electron spin resonance study.</abstract><cop>Ridge, NY</cop><pub>American Physical Society</pub><doi>10.1103/PhysRevB.72.045204</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1098-0121 |
| ispartof | Physical review. B, Condensed matter and materials physics, 2005-07, Vol.72 (4), p.045204.1-045204.6 |
| issn | 1098-0121 1550-235X |
| language | eng |
| recordid | cdi_osti_scitechconnect_20719162 |
| source | American Physical Society Journals |
| subjects | ANGULAR CORRELATION ANISOTROPY ANNIHILATION CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties CRYSTALS Defects and impurities in crystals microstructure DISTRIBUTION DOPPLER BROADENING ELECTRON BEAMS ELECTRON SPIN RESONANCE ELECTRONS EMISSION SPECTRA Exact sciences and technology IRRADIATION Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Other interactions of matter with particles and radiation Physics Point defects (vacancies, interstitials, color centers, etc.) and defect clusters POSITRONS SEMICONDUCTOR MATERIALS SILICON SILICON COMPOUNDS Structure of solids and liquids crystallography SYMMETRY TRAPPING VACANCIES ZONES |
| title | Electron-positron momentum distributions associated with isolated silicon vacancies in 3C-SiC |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-12T11%3A27%3A16IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis_osti_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Electron-positron%20momentum%20distributions%20associated%20with%20isolated%20silicon%20vacancies%20in%203C-SiC&rft.jtitle=Physical%20review.%20B,%20Condensed%20matter%20and%20materials%20physics&rft.au=KAWASUSO,%20A&rft.date=2005-07-15&rft.volume=72&rft.issue=4&rft.spage=045204.1&rft.epage=045204.6&rft.pages=045204.1-045204.6&rft.issn=1098-0121&rft.eissn=1550-235X&rft_id=info:doi/10.1103/PhysRevB.72.045204&rft_dat=%3Cpascalfrancis_osti_%3E17092250%3C/pascalfrancis_osti_%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |