Damage formation and annealing at low temperatures in ion implanted ZnO
N, Ar, and Er ions were implanted into ZnO at 15 K within a large fluence range. The Rutherford backscattering technique in the channeling mode was used to study in situ the damage built-up in the Zn sublattice at 15 K. Several stages in the damage formation were observed. From the linear increase o...
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| Veröffentlicht in: | Applied physics letters 2005-11, Vol.87 (19), p.191904-191904-3 |
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| container_end_page | 191904-3 |
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| container_issue | 19 |
| container_start_page | 191904 |
| container_title | Applied physics letters |
| container_volume | 87 |
| creator | Lorenz, K. Alves, E. Wendler, E. Bilani, O. Wesch, W. Hayes, M. |
| description | N, Ar, and Er ions were implanted into ZnO at 15 K within a large fluence range. The Rutherford backscattering technique in the channeling mode was used to study
in situ
the damage built-up in the Zn sublattice at 15 K. Several stages in the damage formation were observed. From the linear increase of the damage for low implantation fluences, an upper limit of the Zn displacement energy of 65 eV could be estimated for [0001] oriented ZnO. Annealing measurements below room temperature show a significant recovery of the lattice starting at temperatures between 80 and
130 K for a sample implanted with low Er fluence. Samples with higher damage levels do not reveal any damage recovery up to room temperature, pointing to the formation of stable defect complexes. |
| doi_str_mv | 10.1063/1.2126137 |
| format | Article |
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in situ
the damage built-up in the Zn sublattice at 15 K. Several stages in the damage formation were observed. From the linear increase of the damage for low implantation fluences, an upper limit of the Zn displacement energy of 65 eV could be estimated for [0001] oriented ZnO. Annealing measurements below room temperature show a significant recovery of the lattice starting at temperatures between 80 and
130 K for a sample implanted with low Er fluence. Samples with higher damage levels do not reveal any damage recovery up to room temperature, pointing to the formation of stable defect complexes.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.2126137</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>United States: American Institute of Physics</publisher><subject>ANNEALING ; ARGON IONS ; CHANNELING ; ERBIUM IONS ; EV RANGE 10-100 ; ION IMPLANTATION ; MATERIALS SCIENCE ; NITROGEN IONS ; RUTHERFORD BACKSCATTERING SPECTROSCOPY ; SEMICONDUCTOR MATERIALS ; TEMPERATURE DEPENDENCE ; TEMPERATURE RANGE 0013-0065 K ; TEMPERATURE RANGE 0065-0273 K ; TEMPERATURE RANGE 0273-0400 K ; ZINC OXIDES</subject><ispartof>Applied physics letters, 2005-11, Vol.87 (19), p.191904-191904-3</ispartof><rights>2005 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c378t-1e361d32a9de1aab7e42b5439238b189763b78a952742c23a5510954e8dc29033</citedby><cites>FETCH-LOGICAL-c378t-1e361d32a9de1aab7e42b5439238b189763b78a952742c23a5510954e8dc29033</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.2126137$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>230,314,780,784,794,885,1559,4512,27924,27925,76384,76390</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/20706451$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Lorenz, K.</creatorcontrib><creatorcontrib>Alves, E.</creatorcontrib><creatorcontrib>Wendler, E.</creatorcontrib><creatorcontrib>Bilani, O.</creatorcontrib><creatorcontrib>Wesch, W.</creatorcontrib><creatorcontrib>Hayes, M.</creatorcontrib><title>Damage formation and annealing at low temperatures in ion implanted ZnO</title><title>Applied physics letters</title><description>N, Ar, and Er ions were implanted into ZnO at 15 K within a large fluence range. The Rutherford backscattering technique in the channeling mode was used to study
in situ
the damage built-up in the Zn sublattice at 15 K. Several stages in the damage formation were observed. From the linear increase of the damage for low implantation fluences, an upper limit of the Zn displacement energy of 65 eV could be estimated for [0001] oriented ZnO. Annealing measurements below room temperature show a significant recovery of the lattice starting at temperatures between 80 and
130 K for a sample implanted with low Er fluence. Samples with higher damage levels do not reveal any damage recovery up to room temperature, pointing to the formation of stable defect complexes.</description><subject>ANNEALING</subject><subject>ARGON IONS</subject><subject>CHANNELING</subject><subject>ERBIUM IONS</subject><subject>EV RANGE 10-100</subject><subject>ION IMPLANTATION</subject><subject>MATERIALS SCIENCE</subject><subject>NITROGEN IONS</subject><subject>RUTHERFORD BACKSCATTERING SPECTROSCOPY</subject><subject>SEMICONDUCTOR MATERIALS</subject><subject>TEMPERATURE DEPENDENCE</subject><subject>TEMPERATURE RANGE 0013-0065 K</subject><subject>TEMPERATURE RANGE 0065-0273 K</subject><subject>TEMPERATURE RANGE 0273-0400 K</subject><subject>ZINC OXIDES</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><recordid>eNp1kE1LxDAURYMoOI4u_AcBVy465uU1TbsRZNRRGJiNbtyE1zQzVvpFEhH_vR07uHPxuDw4XC6HsUsQCxAZ3sBCgswA9RGbgdA6QYD8mM2EEJhkhYJTdhbCx_gqiThjq3tqaef4tvctxbrvOHXVeJ2jpu52nCJv-i8eXTs4T_HTu8Drju_Buh0a6qKr-Fu3OWcnW2qCuzjknL0-Prwsn5L1ZvW8vFsnFnUeE3CYQYWSisoBUaldKkuVYiExLyEvdIalzqlQUqfSSiSlQBQqdXllZSEQ5-xq6u1DrE2wdXT23fbjXhuNFFpkqYKRup4o6_sQvNuawdct-W8Dwuw9GTAHTyN7O7H7sl8F_8OTLPMny4yy8AdHfW1x</recordid><startdate>20051107</startdate><enddate>20051107</enddate><creator>Lorenz, K.</creator><creator>Alves, E.</creator><creator>Wendler, E.</creator><creator>Bilani, O.</creator><creator>Wesch, W.</creator><creator>Hayes, M.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>20051107</creationdate><title>Damage formation and annealing at low temperatures in ion implanted ZnO</title><author>Lorenz, K. ; Alves, E. ; Wendler, E. ; Bilani, O. ; Wesch, W. ; Hayes, M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c378t-1e361d32a9de1aab7e42b5439238b189763b78a952742c23a5510954e8dc29033</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><topic>ANNEALING</topic><topic>ARGON IONS</topic><topic>CHANNELING</topic><topic>ERBIUM IONS</topic><topic>EV RANGE 10-100</topic><topic>ION IMPLANTATION</topic><topic>MATERIALS SCIENCE</topic><topic>NITROGEN IONS</topic><topic>RUTHERFORD BACKSCATTERING SPECTROSCOPY</topic><topic>SEMICONDUCTOR MATERIALS</topic><topic>TEMPERATURE DEPENDENCE</topic><topic>TEMPERATURE RANGE 0013-0065 K</topic><topic>TEMPERATURE RANGE 0065-0273 K</topic><topic>TEMPERATURE RANGE 0273-0400 K</topic><topic>ZINC OXIDES</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lorenz, K.</creatorcontrib><creatorcontrib>Alves, E.</creatorcontrib><creatorcontrib>Wendler, E.</creatorcontrib><creatorcontrib>Bilani, O.</creatorcontrib><creatorcontrib>Wesch, W.</creatorcontrib><creatorcontrib>Hayes, M.</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lorenz, K.</au><au>Alves, E.</au><au>Wendler, E.</au><au>Bilani, O.</au><au>Wesch, W.</au><au>Hayes, M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Damage formation and annealing at low temperatures in ion implanted ZnO</atitle><jtitle>Applied physics letters</jtitle><date>2005-11-07</date><risdate>2005</risdate><volume>87</volume><issue>19</issue><spage>191904</spage><epage>191904-3</epage><pages>191904-191904-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>N, Ar, and Er ions were implanted into ZnO at 15 K within a large fluence range. The Rutherford backscattering technique in the channeling mode was used to study
in situ
the damage built-up in the Zn sublattice at 15 K. Several stages in the damage formation were observed. From the linear increase of the damage for low implantation fluences, an upper limit of the Zn displacement energy of 65 eV could be estimated for [0001] oriented ZnO. Annealing measurements below room temperature show a significant recovery of the lattice starting at temperatures between 80 and
130 K for a sample implanted with low Er fluence. Samples with higher damage levels do not reveal any damage recovery up to room temperature, pointing to the formation of stable defect complexes.</abstract><cop>United States</cop><pub>American Institute of Physics</pub><doi>10.1063/1.2126137</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2005-11, Vol.87 (19), p.191904-191904-3 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_osti_scitechconnect_20706451 |
| source | AIP Journals Complete; AIP Digital Archive |
| subjects | ANNEALING ARGON IONS CHANNELING ERBIUM IONS EV RANGE 10-100 ION IMPLANTATION MATERIALS SCIENCE NITROGEN IONS RUTHERFORD BACKSCATTERING SPECTROSCOPY SEMICONDUCTOR MATERIALS TEMPERATURE DEPENDENCE TEMPERATURE RANGE 0013-0065 K TEMPERATURE RANGE 0065-0273 K TEMPERATURE RANGE 0273-0400 K ZINC OXIDES |
| title | Damage formation and annealing at low temperatures in ion implanted ZnO |
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