Evidence of formation of Si-C bonds during growth of Si-doped III-V semiconductor compounds
In this work, we demonstrate that Si-C bonds are formed in III-V semiconductor compounds grown by chemical beam epitaxy. Our results suggest that the formation of Si-C bonds occurs in III-V epitaxial layers with acceptor Carbon residual concentration and high Si concentrations ( > 10 17 cm − 3 )...
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| Veröffentlicht in: | Applied physics letters 2005-04, Vol.86 (15), p.152113-152113-3 |
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| container_end_page | 152113-3 |
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| container_issue | 15 |
| container_start_page | 152113 |
| container_title | Applied physics letters |
| container_volume | 86 |
| creator | Bettini, J. de Carvalho, M. M. G |
| description | In this work, we demonstrate that Si-C bonds are formed in III-V semiconductor compounds grown by chemical beam epitaxy. Our results suggest that the formation of Si-C bonds occurs in III-V epitaxial layers with acceptor Carbon residual concentration and high Si concentrations
(
>
10
17
cm
−
3
)
. The main consequence of Si-C bonds is the generation of defects along [111] direction. These defects produce carrier concentration saturation, reduction of electrical mobility, crystal quality degradation, and surface defects. |
| doi_str_mv | 10.1063/1.1905783 |
| format | Article |
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(
>
10
17
cm
−
3
)
. The main consequence of Si-C bonds is the generation of defects along [111] direction. These defects produce carrier concentration saturation, reduction of electrical mobility, crystal quality degradation, and surface defects.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.1905783</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>United States: American Institute of Physics</publisher><subject>CARBON ; CARRIER MOBILITY ; CHEMICAL BONDS ; CRYSTAL GROWTH ; CRYSTALS ; DISLOCATIONS ; DOPED MATERIALS ; ELECTRON DENSITY ; EPITAXY ; GALLIUM ARSENIDES ; IMPURITIES ; INDIUM COMPOUNDS ; MATERIALS SCIENCE ; MORPHOLOGY ; SEMICONDUCTOR MATERIALS ; SILICON ; SPATIAL DISTRIBUTION</subject><ispartof>Applied physics letters, 2005-04, Vol.86 (15), p.152113-152113-3</ispartof><rights>2005 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c312t-27039f75567892aa0f8b23854ac971a95f2849988bb43d553dca4757e08cf7833</citedby><cites>FETCH-LOGICAL-c312t-27039f75567892aa0f8b23854ac971a95f2849988bb43d553dca4757e08cf7833</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.1905783$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>230,314,778,782,792,883,1556,4500,27911,27912,76141,76147</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/20702299$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Bettini, J.</creatorcontrib><creatorcontrib>de Carvalho, M. M. G</creatorcontrib><title>Evidence of formation of Si-C bonds during growth of Si-doped III-V semiconductor compounds</title><title>Applied physics letters</title><description>In this work, we demonstrate that Si-C bonds are formed in III-V semiconductor compounds grown by chemical beam epitaxy. Our results suggest that the formation of Si-C bonds occurs in III-V epitaxial layers with acceptor Carbon residual concentration and high Si concentrations
(
>
10
17
cm
−
3
)
. The main consequence of Si-C bonds is the generation of defects along [111] direction. These defects produce carrier concentration saturation, reduction of electrical mobility, crystal quality degradation, and surface defects.</description><subject>CARBON</subject><subject>CARRIER MOBILITY</subject><subject>CHEMICAL BONDS</subject><subject>CRYSTAL GROWTH</subject><subject>CRYSTALS</subject><subject>DISLOCATIONS</subject><subject>DOPED MATERIALS</subject><subject>ELECTRON DENSITY</subject><subject>EPITAXY</subject><subject>GALLIUM ARSENIDES</subject><subject>IMPURITIES</subject><subject>INDIUM COMPOUNDS</subject><subject>MATERIALS SCIENCE</subject><subject>MORPHOLOGY</subject><subject>SEMICONDUCTOR MATERIALS</subject><subject>SILICON</subject><subject>SPATIAL DISTRIBUTION</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><recordid>eNp1kE1LAzEQhoMoWKsH_0HAk4et-dg0yUWQUnWh4MGPi4eQzUcbcTcl2Sr-e1PbHj0NL_PMMPMAcInRBKMpvcETLBHjgh6BEUacVxRjcQxGCCFaTSXDp-As548SGaF0BN7nX8G63jgYPfQxdXoIsd-G51DNYBt7m6HdpNAv4TLF72G179m4dhY2TVO9wey6YAq5MUNM0MRuHTdl7hyceP2Z3cW-jsHr_fxl9lgtnh6a2d2iMhSToSIcUek5Y1MuJNEaedESKlitjeRYS-aJqKUUom1rahmj1uiaM-6QML58Ssfgarc35iGobMLgzKrc0zszKII4IkTKQl3vKJNizsl5tU6h0-lHYaS27hRWe3eFvd2x22V_Rv6HDwJV9OogkP4C2AR0gA</recordid><startdate>20050411</startdate><enddate>20050411</enddate><creator>Bettini, J.</creator><creator>de Carvalho, M. M. G</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>20050411</creationdate><title>Evidence of formation of Si-C bonds during growth of Si-doped III-V semiconductor compounds</title><author>Bettini, J. ; de Carvalho, M. M. G</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c312t-27039f75567892aa0f8b23854ac971a95f2849988bb43d553dca4757e08cf7833</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><topic>CARBON</topic><topic>CARRIER MOBILITY</topic><topic>CHEMICAL BONDS</topic><topic>CRYSTAL GROWTH</topic><topic>CRYSTALS</topic><topic>DISLOCATIONS</topic><topic>DOPED MATERIALS</topic><topic>ELECTRON DENSITY</topic><topic>EPITAXY</topic><topic>GALLIUM ARSENIDES</topic><topic>IMPURITIES</topic><topic>INDIUM COMPOUNDS</topic><topic>MATERIALS SCIENCE</topic><topic>MORPHOLOGY</topic><topic>SEMICONDUCTOR MATERIALS</topic><topic>SILICON</topic><topic>SPATIAL DISTRIBUTION</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Bettini, J.</creatorcontrib><creatorcontrib>de Carvalho, M. M. G</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Bettini, J.</au><au>de Carvalho, M. M. G</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Evidence of formation of Si-C bonds during growth of Si-doped III-V semiconductor compounds</atitle><jtitle>Applied physics letters</jtitle><date>2005-04-11</date><risdate>2005</risdate><volume>86</volume><issue>15</issue><spage>152113</spage><epage>152113-3</epage><pages>152113-152113-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>In this work, we demonstrate that Si-C bonds are formed in III-V semiconductor compounds grown by chemical beam epitaxy. Our results suggest that the formation of Si-C bonds occurs in III-V epitaxial layers with acceptor Carbon residual concentration and high Si concentrations
(
>
10
17
cm
−
3
)
. The main consequence of Si-C bonds is the generation of defects along [111] direction. These defects produce carrier concentration saturation, reduction of electrical mobility, crystal quality degradation, and surface defects.</abstract><cop>United States</cop><pub>American Institute of Physics</pub><doi>10.1063/1.1905783</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2005-04, Vol.86 (15), p.152113-152113-3 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_osti_scitechconnect_20702299 |
| source | AIP Journals Complete; AIP Digital Archive |
| subjects | CARBON CARRIER MOBILITY CHEMICAL BONDS CRYSTAL GROWTH CRYSTALS DISLOCATIONS DOPED MATERIALS ELECTRON DENSITY EPITAXY GALLIUM ARSENIDES IMPURITIES INDIUM COMPOUNDS MATERIALS SCIENCE MORPHOLOGY SEMICONDUCTOR MATERIALS SILICON SPATIAL DISTRIBUTION |
| title | Evidence of formation of Si-C bonds during growth of Si-doped III-V semiconductor compounds |
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