High electron concentration and mobility in Al-doped n -ZnO epilayer achieved via dopant activation using rapid-thermal annealing
We report on the growth of very high-quality Al-doped n -type ZnO epilayers on sapphire substrates using a radio-frequency (rf) magnetron sputtering technique combined with a rapid-thermal annealing. Photoluminescence (PL) and Hall measurements show that both the optical and electrical properties of...
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| Veröffentlicht in: | Journal of applied physics 2005-03, Vol.97 (6), p.066103-066103-3 |
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| container_end_page | 066103-3 |
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| container_issue | 6 |
| container_start_page | 066103 |
| container_title | Journal of applied physics |
| container_volume | 97 |
| creator | Kim, Kyoung-Kook Niki, Shigeru Oh, Jin-Yong Song, June-O Seong, Tae-Yeon Park, Seong-Ju Fujita, Shizuo Kim, Sang-Woo |
| description | We report on the growth of very high-quality Al-doped
n
-type ZnO epilayers on sapphire substrates using a radio-frequency (rf) magnetron sputtering technique combined with a rapid-thermal annealing. Photoluminescence (PL) and Hall measurements show that both the optical and electrical properties of the ZnO layers are significantly improved with an increasing annealing temperature up to 900°C. For example, the samples that are grown at 600°C and a rf power of 100 W with an
Ar
∕
O
2
gas ratio of 1 give an electron concentration of
1.83
×
10
20
cm
3
and a mobility of
65.6
cm
2
∕
V
s
, when annealed at 900°C for 3 min in a nitrogen ambient. Furthermore, x-ray diffraction measurements show that both the as-grown and annealed samples are of excellent crystallinity. |
| doi_str_mv | 10.1063/1.1863416 |
| format | Article |
| fullrecord | <record><control><sourceid>scitation_osti_</sourceid><recordid>TN_cdi_osti_scitechconnect_20668263</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>jap</sourcerecordid><originalsourceid>FETCH-LOGICAL-c387t-2df1fa0f2634161e6620c74acf01bfdec3bb8340e484a7e3a58d6dfab3652daa3</originalsourceid><addsrcrecordid>eNp1kEFLwzAUx4MoOKcHv0HAk4fOpGnT9CKMoU4Y7KIXL-E1SddIl44kDnb0m5vZefT0eO_9-MP_h9AtJTNKOHugMyo4Kyg_QxNKRJ1VZUnO0YSQnGairupLdBXCJyGUClZP0PfSbjpseqOiHxxWg1PGRQ_Rpg2cxtuhsb2NB2wdnveZHnZGY4ezD7fGZmd7OBiPQXXW7NNjbwEnBFxMt2j3Y85XsG6DPeyszmJn_Bb6lO0M9Ol-jS5a6IO5Oc0pen9-elsss9X65XUxX2WKiSpmuW5pC6TNf9tRw3lOVFWAagltWm0UaxrBCmIKUUBlGJRCc91Cw3iZawA2RXdj7hCilUHZaFSX-rpUXeaEc5GiE3U_UsoPIXjTyp23W_AHSYk8GpZUngwn9nFkj2G_Tf-Hj5rln2Y5amY_2iCFaQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>High electron concentration and mobility in Al-doped n -ZnO epilayer achieved via dopant activation using rapid-thermal annealing</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><creator>Kim, Kyoung-Kook ; Niki, Shigeru ; Oh, Jin-Yong ; Song, June-O ; Seong, Tae-Yeon ; Park, Seong-Ju ; Fujita, Shizuo ; Kim, Sang-Woo</creator><creatorcontrib>Kim, Kyoung-Kook ; Niki, Shigeru ; Oh, Jin-Yong ; Song, June-O ; Seong, Tae-Yeon ; Park, Seong-Ju ; Fujita, Shizuo ; Kim, Sang-Woo</creatorcontrib><description>We report on the growth of very high-quality Al-doped
n
-type ZnO epilayers on sapphire substrates using a radio-frequency (rf) magnetron sputtering technique combined with a rapid-thermal annealing. Photoluminescence (PL) and Hall measurements show that both the optical and electrical properties of the ZnO layers are significantly improved with an increasing annealing temperature up to 900°C. For example, the samples that are grown at 600°C and a rf power of 100 W with an
Ar
∕
O
2
gas ratio of 1 give an electron concentration of
1.83
×
10
20
cm
3
and a mobility of
65.6
cm
2
∕
V
s
, when annealed at 900°C for 3 min in a nitrogen ambient. Furthermore, x-ray diffraction measurements show that both the as-grown and annealed samples are of excellent crystallinity.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.1863416</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>United States: American Institute of Physics</publisher><subject>ALUMINIUM ; ANNEALING ; CRYSTAL GROWTH ; DEPOSITION ; DOPED MATERIALS ; ELECTRICAL PROPERTIES ; ELECTRON DENSITY ; ELECTRON MOBILITY ; ELECTRONS ; EPITAXY ; MAGNETRONS ; MATERIALS SCIENCE ; MEAN FREE PATH ; NITROGEN ; PHOTOLUMINESCENCE ; RADIOWAVE RADIATION ; SAPPHIRE ; SEMICONDUCTOR MATERIALS ; SPUTTERING ; X-RAY DIFFRACTION ; ZINC OXIDES</subject><ispartof>Journal of applied physics, 2005-03, Vol.97 (6), p.066103-066103-3</ispartof><rights>2005 American Institute of Physics</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c387t-2df1fa0f2634161e6620c74acf01bfdec3bb8340e484a7e3a58d6dfab3652daa3</citedby><cites>FETCH-LOGICAL-c387t-2df1fa0f2634161e6620c74acf01bfdec3bb8340e484a7e3a58d6dfab3652daa3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/jap/article-lookup/doi/10.1063/1.1863416$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>230,314,776,780,790,881,1553,4498,27901,27902,76126,76132</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/20668263$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Kim, Kyoung-Kook</creatorcontrib><creatorcontrib>Niki, Shigeru</creatorcontrib><creatorcontrib>Oh, Jin-Yong</creatorcontrib><creatorcontrib>Song, June-O</creatorcontrib><creatorcontrib>Seong, Tae-Yeon</creatorcontrib><creatorcontrib>Park, Seong-Ju</creatorcontrib><creatorcontrib>Fujita, Shizuo</creatorcontrib><creatorcontrib>Kim, Sang-Woo</creatorcontrib><title>High electron concentration and mobility in Al-doped n -ZnO epilayer achieved via dopant activation using rapid-thermal annealing</title><title>Journal of applied physics</title><description>We report on the growth of very high-quality Al-doped
n
-type ZnO epilayers on sapphire substrates using a radio-frequency (rf) magnetron sputtering technique combined with a rapid-thermal annealing. Photoluminescence (PL) and Hall measurements show that both the optical and electrical properties of the ZnO layers are significantly improved with an increasing annealing temperature up to 900°C. For example, the samples that are grown at 600°C and a rf power of 100 W with an
Ar
∕
O
2
gas ratio of 1 give an electron concentration of
1.83
×
10
20
cm
3
and a mobility of
65.6
cm
2
∕
V
s
, when annealed at 900°C for 3 min in a nitrogen ambient. Furthermore, x-ray diffraction measurements show that both the as-grown and annealed samples are of excellent crystallinity.</description><subject>ALUMINIUM</subject><subject>ANNEALING</subject><subject>CRYSTAL GROWTH</subject><subject>DEPOSITION</subject><subject>DOPED MATERIALS</subject><subject>ELECTRICAL PROPERTIES</subject><subject>ELECTRON DENSITY</subject><subject>ELECTRON MOBILITY</subject><subject>ELECTRONS</subject><subject>EPITAXY</subject><subject>MAGNETRONS</subject><subject>MATERIALS SCIENCE</subject><subject>MEAN FREE PATH</subject><subject>NITROGEN</subject><subject>PHOTOLUMINESCENCE</subject><subject>RADIOWAVE RADIATION</subject><subject>SAPPHIRE</subject><subject>SEMICONDUCTOR MATERIALS</subject><subject>SPUTTERING</subject><subject>X-RAY DIFFRACTION</subject><subject>ZINC OXIDES</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><recordid>eNp1kEFLwzAUx4MoOKcHv0HAk4fOpGnT9CKMoU4Y7KIXL-E1SddIl44kDnb0m5vZefT0eO_9-MP_h9AtJTNKOHugMyo4Kyg_QxNKRJ1VZUnO0YSQnGairupLdBXCJyGUClZP0PfSbjpseqOiHxxWg1PGRQ_Rpg2cxtuhsb2NB2wdnveZHnZGY4ezD7fGZmd7OBiPQXXW7NNjbwEnBFxMt2j3Y85XsG6DPeyszmJn_Bb6lO0M9Ol-jS5a6IO5Oc0pen9-elsss9X65XUxX2WKiSpmuW5pC6TNf9tRw3lOVFWAagltWm0UaxrBCmIKUUBlGJRCc91Cw3iZawA2RXdj7hCilUHZaFSX-rpUXeaEc5GiE3U_UsoPIXjTyp23W_AHSYk8GpZUngwn9nFkj2G_Tf-Hj5rln2Y5amY_2iCFaQ</recordid><startdate>20050315</startdate><enddate>20050315</enddate><creator>Kim, Kyoung-Kook</creator><creator>Niki, Shigeru</creator><creator>Oh, Jin-Yong</creator><creator>Song, June-O</creator><creator>Seong, Tae-Yeon</creator><creator>Park, Seong-Ju</creator><creator>Fujita, Shizuo</creator><creator>Kim, Sang-Woo</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>20050315</creationdate><title>High electron concentration and mobility in Al-doped n -ZnO epilayer achieved via dopant activation using rapid-thermal annealing</title><author>Kim, Kyoung-Kook ; Niki, Shigeru ; Oh, Jin-Yong ; Song, June-O ; Seong, Tae-Yeon ; Park, Seong-Ju ; Fujita, Shizuo ; Kim, Sang-Woo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c387t-2df1fa0f2634161e6620c74acf01bfdec3bb8340e484a7e3a58d6dfab3652daa3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><topic>ALUMINIUM</topic><topic>ANNEALING</topic><topic>CRYSTAL GROWTH</topic><topic>DEPOSITION</topic><topic>DOPED MATERIALS</topic><topic>ELECTRICAL PROPERTIES</topic><topic>ELECTRON DENSITY</topic><topic>ELECTRON MOBILITY</topic><topic>ELECTRONS</topic><topic>EPITAXY</topic><topic>MAGNETRONS</topic><topic>MATERIALS SCIENCE</topic><topic>MEAN FREE PATH</topic><topic>NITROGEN</topic><topic>PHOTOLUMINESCENCE</topic><topic>RADIOWAVE RADIATION</topic><topic>SAPPHIRE</topic><topic>SEMICONDUCTOR MATERIALS</topic><topic>SPUTTERING</topic><topic>X-RAY DIFFRACTION</topic><topic>ZINC OXIDES</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kim, Kyoung-Kook</creatorcontrib><creatorcontrib>Niki, Shigeru</creatorcontrib><creatorcontrib>Oh, Jin-Yong</creatorcontrib><creatorcontrib>Song, June-O</creatorcontrib><creatorcontrib>Seong, Tae-Yeon</creatorcontrib><creatorcontrib>Park, Seong-Ju</creatorcontrib><creatorcontrib>Fujita, Shizuo</creatorcontrib><creatorcontrib>Kim, Sang-Woo</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kim, Kyoung-Kook</au><au>Niki, Shigeru</au><au>Oh, Jin-Yong</au><au>Song, June-O</au><au>Seong, Tae-Yeon</au><au>Park, Seong-Ju</au><au>Fujita, Shizuo</au><au>Kim, Sang-Woo</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High electron concentration and mobility in Al-doped n -ZnO epilayer achieved via dopant activation using rapid-thermal annealing</atitle><jtitle>Journal of applied physics</jtitle><date>2005-03-15</date><risdate>2005</risdate><volume>97</volume><issue>6</issue><spage>066103</spage><epage>066103-3</epage><pages>066103-066103-3</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>We report on the growth of very high-quality Al-doped
n
-type ZnO epilayers on sapphire substrates using a radio-frequency (rf) magnetron sputtering technique combined with a rapid-thermal annealing. Photoluminescence (PL) and Hall measurements show that both the optical and electrical properties of the ZnO layers are significantly improved with an increasing annealing temperature up to 900°C. For example, the samples that are grown at 600°C and a rf power of 100 W with an
Ar
∕
O
2
gas ratio of 1 give an electron concentration of
1.83
×
10
20
cm
3
and a mobility of
65.6
cm
2
∕
V
s
, when annealed at 900°C for 3 min in a nitrogen ambient. Furthermore, x-ray diffraction measurements show that both the as-grown and annealed samples are of excellent crystallinity.</abstract><cop>United States</cop><pub>American Institute of Physics</pub><doi>10.1063/1.1863416</doi><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-8979 |
| ispartof | Journal of applied physics, 2005-03, Vol.97 (6), p.066103-066103-3 |
| issn | 0021-8979 1089-7550 |
| language | eng |
| recordid | cdi_osti_scitechconnect_20668263 |
| source | AIP Journals Complete; AIP Digital Archive |
| subjects | ALUMINIUM ANNEALING CRYSTAL GROWTH DEPOSITION DOPED MATERIALS ELECTRICAL PROPERTIES ELECTRON DENSITY ELECTRON MOBILITY ELECTRONS EPITAXY MAGNETRONS MATERIALS SCIENCE MEAN FREE PATH NITROGEN PHOTOLUMINESCENCE RADIOWAVE RADIATION SAPPHIRE SEMICONDUCTOR MATERIALS SPUTTERING X-RAY DIFFRACTION ZINC OXIDES |
| title | High electron concentration and mobility in Al-doped n -ZnO epilayer achieved via dopant activation using rapid-thermal annealing |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-07T02%3A42%3A03IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-scitation_osti_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=High%20electron%20concentration%20and%20mobility%20in%20Al-doped%20n%20-ZnO%20epilayer%20achieved%20via%20dopant%20activation%20using%20rapid-thermal%20annealing&rft.jtitle=Journal%20of%20applied%20physics&rft.au=Kim,%20Kyoung-Kook&rft.date=2005-03-15&rft.volume=97&rft.issue=6&rft.spage=066103&rft.epage=066103-3&rft.pages=066103-066103-3&rft.issn=0021-8979&rft.eissn=1089-7550&rft.coden=JAPIAU&rft_id=info:doi/10.1063/1.1863416&rft_dat=%3Cscitation_osti_%3Ejap%3C/scitation_osti_%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |