Silicon diffusion in sol-gel derived isotopically enriched silica glasses

We performed silicon diffusion experiments with sol-gel derived isotopically enriched silica glasses at temperatures between 1050°C and 1300°C. The diffusion profiles were measured by means of time-of-flight secondary ion mass spectrometry. Samples annealed in closed silica ampoules under argon or d...

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Veröffentlicht in:Journal of applied physics 2005-02, Vol.97 (4), p.046107-046107-3
Hauptverfasser: Bracht, H., Staskunaite, R., Haller, E. E., Fielitz, P., Borchardt, G., Grambole, D.
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Sprache:eng
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