Silicon diffusion in sol-gel derived isotopically enriched silica glasses
We performed silicon diffusion experiments with sol-gel derived isotopically enriched silica glasses at temperatures between 1050°C and 1300°C. The diffusion profiles were measured by means of time-of-flight secondary ion mass spectrometry. Samples annealed in closed silica ampoules under argon or d...
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Veröffentlicht in: | Journal of applied physics 2005-02, Vol.97 (4), p.046107-046107-3 |
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Sprache: | eng |
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