Strain relief during Ge hut cluster formation on Si(001) studied by high-resolution LEED and surface-stress-induced optical deflection
The kinetics of Ge hut cluster formation and the evolution of film stress have been studied during Ge deposition at 400 and 500 deg. C by high-resolution low-energy electron diffraction and surface-stress-induced optical deflection. The hut clusters grow coherent to the Si substrate but show an incr...
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| Veröffentlicht in: | Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2004-12, Vol.70 (23), p.235313.1-235313.7, Article 235313 |
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| container_end_page | 235313.7 |
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| container_issue | 23 |
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| container_title | Physical review. B, Condensed matter and materials physics |
| container_volume | 70 |
| creator | HORN-VON HOEGEN, M MÜLLER, B. H GRABOSCH, T KURY, P |
| description | The kinetics of Ge hut cluster formation and the evolution of film stress have been studied during Ge deposition at 400 and 500 deg. C by high-resolution low-energy electron diffraction and surface-stress-induced optical deflection. The hut clusters grow coherent to the Si substrate but show an increased layer distance of 4% due to strain-induced tetragonal distortion. The distortion of the Ge unit cell adds up to more than 8%. The sudden onset of hut formation is observed at 3.5 monolayers of Ge. Individual hut clusters instantly grow to a width of 20 nm. The strain relief of the order of 15%-20% is maximized by complete dissociation of the Ge wetting layer. Together with this Ge only two additional monolayers of Ge are necessary to cover the entire surface with fully evolved hut clusters. |
| doi_str_mv | 10.1103/physrevb.70.235313 |
| format | Article |
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H</creatorcontrib><creatorcontrib>GRABOSCH, T</creatorcontrib><creatorcontrib>KURY, P</creatorcontrib><title>Strain relief during Ge hut cluster formation on Si(001) studied by high-resolution LEED and surface-stress-induced optical deflection</title><title>Physical review. B, Condensed matter and materials physics</title><description>The kinetics of Ge hut cluster formation and the evolution of film stress have been studied during Ge deposition at 400 and 500 deg. C by high-resolution low-energy electron diffraction and surface-stress-induced optical deflection. The hut clusters grow coherent to the Si substrate but show an increased layer distance of 4% due to strain-induced tetragonal distortion. The distortion of the Ge unit cell adds up to more than 8%. The sudden onset of hut formation is observed at 3.5 monolayers of Ge. Individual hut clusters instantly grow to a width of 20 nm. The strain relief of the order of 15%-20% is maximized by complete dissociation of the Ge wetting layer. 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H ; GRABOSCH, T ; KURY, P</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c371t-ee697456d00166e1c82fe06adcacae863cbe289c15709f21274970177cc2d9323</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2004</creationdate><topic>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>DEPOSITION</topic><topic>DISSOCIATION</topic><topic>ELECTRON DIFFRACTION</topic><topic>EPITAXY</topic><topic>Exact sciences and technology</topic><topic>GERMANIUM</topic><topic>KINETICS</topic><topic>LAYERS</topic><topic>MORPHOLOGY</topic><topic>Physics</topic><topic>SEMICONDUCTOR MATERIALS</topic><topic>STRAINS</topic><topic>STRESS RELAXATION</topic><topic>STRESSES</topic><topic>Structure and morphology; thickness</topic><topic>SURFACES</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><topic>TEMPERATURE RANGE 0400-1000 K</topic><topic>Thin film structure and morphology</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>HORN-VON HOEGEN, M</creatorcontrib><creatorcontrib>MÜLLER, B. H</creatorcontrib><creatorcontrib>GRABOSCH, T</creatorcontrib><creatorcontrib>KURY, P</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Physical review. B, Condensed matter and materials physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>HORN-VON HOEGEN, M</au><au>MÜLLER, B. H</au><au>GRABOSCH, T</au><au>KURY, P</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Strain relief during Ge hut cluster formation on Si(001) studied by high-resolution LEED and surface-stress-induced optical deflection</atitle><jtitle>Physical review. B, Condensed matter and materials physics</jtitle><date>2004-12-01</date><risdate>2004</risdate><volume>70</volume><issue>23</issue><spage>235313.1</spage><epage>235313.7</epage><pages>235313.1-235313.7</pages><artnum>235313</artnum><issn>1098-0121</issn><eissn>1550-235X</eissn><abstract>The kinetics of Ge hut cluster formation and the evolution of film stress have been studied during Ge deposition at 400 and 500 deg. C by high-resolution low-energy electron diffraction and surface-stress-induced optical deflection. The hut clusters grow coherent to the Si substrate but show an increased layer distance of 4% due to strain-induced tetragonal distortion. The distortion of the Ge unit cell adds up to more than 8%. The sudden onset of hut formation is observed at 3.5 monolayers of Ge. Individual hut clusters instantly grow to a width of 20 nm. The strain relief of the order of 15%-20% is maximized by complete dissociation of the Ge wetting layer. Together with this Ge only two additional monolayers of Ge are necessary to cover the entire surface with fully evolved hut clusters.</abstract><cop>Ridge, NY</cop><pub>American Physical Society</pub><doi>10.1103/physrevb.70.235313</doi></addata></record> |
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| ispartof | Physical review. B, Condensed matter and materials physics, 2004-12, Vol.70 (23), p.235313.1-235313.7, Article 235313 |
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| source | American Physical Society Journals |
| subjects | CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY Condensed matter: structure, mechanical and thermal properties DEPOSITION DISSOCIATION ELECTRON DIFFRACTION EPITAXY Exact sciences and technology GERMANIUM KINETICS LAYERS MORPHOLOGY Physics SEMICONDUCTOR MATERIALS STRAINS STRESS RELAXATION STRESSES Structure and morphology thickness SURFACES Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) TEMPERATURE RANGE 0400-1000 K Thin film structure and morphology |
| title | Strain relief during Ge hut cluster formation on Si(001) studied by high-resolution LEED and surface-stress-induced optical deflection |
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