Photoluminescence of ZnSe{sub x}Te{sub 1-x}/ZnTe multiple-quantum-well structures grown by molecular-beam epitaxy

This work investigates photoluminescence (PL) spectra from ZnSe{sub x}Te{sub 1-x}/ZnTe multiple-quantum-well structures grown on GaAs(001) substrates by molecular-beam epitaxy. The PL data reveal that the band alignment of the ZnSe{sub x}Te{sub 1-x}/ZnTe system is type II. The thermal activation ene...

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Veröffentlicht in:	Journal of applied physics 2004-12, Vol.96 (12)
Hauptverfasser:	Shih, Y.T., Tsai, Y.L., Yuan, C.T., Chen, C.Y., Yang, C.S., Chou, W.C., Institute of Applied Physics, Chung Yuan Christian University, Chungli, Taiwan 32023, Institute of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan 30050
Format:	Artikel
Sprache:	eng
Schlagworte:	ACTIVATION ENERGY CRYSTAL GROWTH GALLIUM ARSENIDES LAYERS MATERIALS SCIENCE MOLECULAR BEAM EPITAXY PHONONS PHOTOLUMINESCENCE QUANTUM WELLS QUENCHING SCATTERING SELENIUM TELLURIDES SEMICONDUCTOR MATERIALS SPECTRA SUBSTRATES TEMPERATURE DEPENDENCE THICKNESS ZINC TELLURIDES
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Zusammenfassung:	This work investigates photoluminescence (PL) spectra from ZnSe{sub x}Te{sub 1-x}/ZnTe multiple-quantum-well structures grown on GaAs(001) substrates by molecular-beam epitaxy. The PL data reveal that the band alignment of the ZnSe{sub x}Te{sub 1-x}/ZnTe system is type II. The thermal activation energy for quenching the PL intensity was determined from the temperature-dependent PL spectra. The activation energy was found to increase initially and then decrease as the thickness of the ZnSe{sub x}Te{sub 1-x} layers decreases from 7 to 3 nm. The temperature-dependent broadening of the PL linewidth was also investigated. The LO-phonon scattering was found to be the dominant broadening mechanism.
ISSN:	0021-8979 1089-7550
DOI:	10.1063/1.1818712