Energy dependence of majority carrier defect introduction rates in p+n GaAs photodiodes irradiated with protons

Traps introduced into p{sup +} n GaAs diodes, grown by molecular beam epitaxy, by room temperature irradiation with 1, 4, 10, 50, and 53 MeV protons, have been studied using deep--level transient spectroscopy. Five distinct majority carrier (electron) traps were observed after irradiation. The activ...

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