The accumulation of radiation defects in gallium arsenide that has been subjected to pulsed and continuous ion implantation

Measurements of electrical conductivity and Rutherford backscattering are used to study the accumulation of defects in GaAs that has been subjected to pulsed ({tau}{sub p} = 1.3 x 10{sup -2} s and an off-duty factor of 100) and continuous irradiation with {sup 32}S, {sup 12}C, and {sup 4}He ions at room temperature at the ion energies E = 100-150 keV, doses {phi} = 1 x 10{sup 9}-6 x 10{sup 16} cm{sup -2}, and current densities j = 1 x 10{sup -9}-3 x 10{sup -6} A cm{sup -2}. It is shown that the defect-accumulation rate during the pulsed implantation is much lower than it is during the continuous implantation.