Design and Performance of Undulator Beamline (BL7U) for in-situ Observation of Synchrotron Radiation Stimulated Etching by STM

An undulator beamline (BL7U) equipped with an ultra-high vacuum STM system is constructed at the UVSOR facility to investigate excitation energy dependence in synchrotron radiation (SR) stimulated etching. The SR beam is focused using two cylindrical mirrors on the sample surface just under the STM...

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Hauptverfasser: Nonogaki, Y, Katoh, M, Shigemasa, E, Matsushita, K, Suzui, M, Urisu, T
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creator Nonogaki, Y
Katoh, M
Shigemasa, E
Matsushita, K
Suzui, M
Urisu, T
description An undulator beamline (BL7U) equipped with an ultra-high vacuum STM system is constructed at the UVSOR facility to investigate excitation energy dependence in synchrotron radiation (SR) stimulated etching. The SR beam is focused using two cylindrical mirrors on the sample surface just under the STM tip. The sample is cleaned by direct current heating and transferred to the sample holder for the STM measurements. The photon flux density is calculated to be 1019 photons (cm2 sec 100mA)-1 within the spot of 0.67 mm (H) X 0.17 mm (V) on the sample surface at the first harmonic tuned to 100 eV. The hydrogen adsorbed Si (111) surfaces were investigated using the STM apparatus before the undulator irradiation experiments were performed.
doi_str_mv 10.1063/1.1757810
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identifier ISSN: 0094-243X
ispartof AIP conference proceedings, 2004, Vol.705 (1), p.368-371
issn 0094-243X
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language eng
recordid cdi_osti_scitechconnect_20652955
source AIP Journals Complete
subjects CYLINDRICAL CONFIGURATION
DESIGN
DIRECT CURRENT
ENERGY DEPENDENCE
ETCHING
EV RANGE 10-100
EXCITATION
FLUX DENSITY
HYDROGEN
INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
IRRADIATION
MIRRORS
PHOTONS
SAMPLE HOLDERS
SCANNING TUNNELING MICROSCOPY
SEMICONDUCTOR MATERIALS
SILICON
SYNCHROTRON RADIATION
ULTRAVIOLET RADIATION
X RADIATION
title Design and Performance of Undulator Beamline (BL7U) for in-situ Observation of Synchrotron Radiation Stimulated Etching by STM
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