Hydrogen-doped high conductivity ZnO films deposited by radio-frequency magnetron sputtering
Hydrogen-doped zinc oxide (ZnO: H ) films were deposited by rf magnetron sputtering as transparent conductive films. The resistivity of ZnO: H film was significantly reduced by the addition of H 2 in Ar during rf sputtering. The electrical resistivity of ZnO: H films reached 2 × 10 − 4 Ω cm . The ca...
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| Veröffentlicht in: | Applied physics letters 2004-12, Vol.85 (23), p.5628-5630 |
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| creator | Chen, Liang-Yih Chen, Wen-Hwa Wang, Jia-Jun Hong, Franklin Chau-Nan Su, Yan-Kuin |
| description | Hydrogen-doped zinc oxide (ZnO:
H
) films were deposited by rf magnetron sputtering as transparent conductive films. The resistivity of ZnO:
H
film was significantly reduced by the addition of
H
2
in Ar during rf sputtering. The electrical resistivity of ZnO:
H
films reached
2
×
10
−
4
Ω
cm
. The carrier concentration increased with increasing
H
2
concentration during deposition. X-ray diffraction results showed that the
d
0002
interplanar spacing increased with increasing
H
2
concentrations. The carrier concentration was significantly reduced in two orders of magnitude by increasing the substrate temperature from 150 to 250°C during deposition. Both results suggested that the increase of carrier concentration by adding
H
2
during sputtering was due to the hydrogen donor rather than the oxygen vacancies in ZnO films, consistent with the theoretical predictions by Van de Walle. UV-visible spectroscopy further showed that the transmittance is high up to 100% in the visible range. The band gap determined by optical absorption increased with increasing
H
2
composition. The phenomenon is interpreted as the filling of conduction band by electrons in
n
-type semiconductor. |
| doi_str_mv | 10.1063/1.1835991 |
| format | Article |
| fullrecord | <record><control><sourceid>scitation_osti_</sourceid><recordid>TN_cdi_osti_scitechconnect_20634495</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>apl</sourcerecordid><originalsourceid>FETCH-LOGICAL-c377t-2e17d59059956f44121f85b61f54d304ab3ca83783f65c79ce9db292e6e1419f3</originalsourceid><addsrcrecordid>eNp1kM9LwzAYhoMoOKcH_4OAJw-d-ZqmbQ4eZKgTBrvoRYTQ5kcX2ZKaZEL_ezs3j54-Xnh4eb8HoWsgMyAlvYMZ1JRxDidoAqSqMgpQn6IJIYRmJWdwji5i_BwjyymdoI_FoILvtMuU77XCa9utsfRO7WSy3zYN-N2tsLGbbcRK9z7aNFLtgEOjrM9M0F877eSAt03ndAre4djvUtLBuu4SnZlmE_XV8U7R29Pj63yRLVfPL_OHZSZpVaUs11Apxsk4m5WmKCAHU7O2BMMKRUnRtFQ2Na1qakomKy41V23Oc11qKIAbOkU3h14fkxVRjhvlenzCaZlEPmopCs5G6vZAyeBjDNqIPthtEwYBROzlCRBHeSN7f2D3ZU2y3v0P_xkUvwbF3iD9AXxudtA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Hydrogen-doped high conductivity ZnO films deposited by radio-frequency magnetron sputtering</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><creator>Chen, Liang-Yih ; Chen, Wen-Hwa ; Wang, Jia-Jun ; Hong, Franklin Chau-Nan ; Su, Yan-Kuin</creator><creatorcontrib>Chen, Liang-Yih ; Chen, Wen-Hwa ; Wang, Jia-Jun ; Hong, Franklin Chau-Nan ; Su, Yan-Kuin</creatorcontrib><description>Hydrogen-doped zinc oxide (ZnO:
H
) films were deposited by rf magnetron sputtering as transparent conductive films. The resistivity of ZnO:
H
film was significantly reduced by the addition of
H
2
in Ar during rf sputtering. The electrical resistivity of ZnO:
H
films reached
2
×
10
−
4
Ω
cm
. The carrier concentration increased with increasing
H
2
concentration during deposition. X-ray diffraction results showed that the
d
0002
interplanar spacing increased with increasing
H
2
concentrations. The carrier concentration was significantly reduced in two orders of magnitude by increasing the substrate temperature from 150 to 250°C during deposition. Both results suggested that the increase of carrier concentration by adding
H
2
during sputtering was due to the hydrogen donor rather than the oxygen vacancies in ZnO films, consistent with the theoretical predictions by Van de Walle. UV-visible spectroscopy further showed that the transmittance is high up to 100% in the visible range. The band gap determined by optical absorption increased with increasing
H
2
composition. The phenomenon is interpreted as the filling of conduction band by electrons in
n
-type semiconductor.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.1835991</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>United States: American Institute of Physics</publisher><subject>CARRIER DENSITY ; CARRIER MOBILITY ; DEPOSITION ; DOPED MATERIALS ; ELECTRIC CONDUCTIVITY ; ELECTRONS ; HYDROGEN ; MAGNETRONS ; MATERIALS SCIENCE ; OXYGEN ; RADIOWAVE RADIATION ; SEMICONDUCTOR MATERIALS ; SPECTROSCOPY ; SPUTTERING ; SUBSTRATES ; THIN FILMS ; ULTRAVIOLET SPECTRA ; VACANCIES ; VISIBLE SPECTRA ; X-RAY DIFFRACTION ; ZINC OXIDES</subject><ispartof>Applied physics letters, 2004-12, Vol.85 (23), p.5628-5630</ispartof><rights>2004 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c377t-2e17d59059956f44121f85b61f54d304ab3ca83783f65c79ce9db292e6e1419f3</citedby><cites>FETCH-LOGICAL-c377t-2e17d59059956f44121f85b61f54d304ab3ca83783f65c79ce9db292e6e1419f3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,776,780,881,27901,27902</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/20634495$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Chen, Liang-Yih</creatorcontrib><creatorcontrib>Chen, Wen-Hwa</creatorcontrib><creatorcontrib>Wang, Jia-Jun</creatorcontrib><creatorcontrib>Hong, Franklin Chau-Nan</creatorcontrib><creatorcontrib>Su, Yan-Kuin</creatorcontrib><title>Hydrogen-doped high conductivity ZnO films deposited by radio-frequency magnetron sputtering</title><title>Applied physics letters</title><description>Hydrogen-doped zinc oxide (ZnO:
H
) films were deposited by rf magnetron sputtering as transparent conductive films. The resistivity of ZnO:
H
film was significantly reduced by the addition of
H
2
in Ar during rf sputtering. The electrical resistivity of ZnO:
H
films reached
2
×
10
−
4
Ω
cm
. The carrier concentration increased with increasing
H
2
concentration during deposition. X-ray diffraction results showed that the
d
0002
interplanar spacing increased with increasing
H
2
concentrations. The carrier concentration was significantly reduced in two orders of magnitude by increasing the substrate temperature from 150 to 250°C during deposition. Both results suggested that the increase of carrier concentration by adding
H
2
during sputtering was due to the hydrogen donor rather than the oxygen vacancies in ZnO films, consistent with the theoretical predictions by Van de Walle. UV-visible spectroscopy further showed that the transmittance is high up to 100% in the visible range. The band gap determined by optical absorption increased with increasing
H
2
composition. The phenomenon is interpreted as the filling of conduction band by electrons in
n
-type semiconductor.</description><subject>CARRIER DENSITY</subject><subject>CARRIER MOBILITY</subject><subject>DEPOSITION</subject><subject>DOPED MATERIALS</subject><subject>ELECTRIC CONDUCTIVITY</subject><subject>ELECTRONS</subject><subject>HYDROGEN</subject><subject>MAGNETRONS</subject><subject>MATERIALS SCIENCE</subject><subject>OXYGEN</subject><subject>RADIOWAVE RADIATION</subject><subject>SEMICONDUCTOR MATERIALS</subject><subject>SPECTROSCOPY</subject><subject>SPUTTERING</subject><subject>SUBSTRATES</subject><subject>THIN FILMS</subject><subject>ULTRAVIOLET SPECTRA</subject><subject>VACANCIES</subject><subject>VISIBLE SPECTRA</subject><subject>X-RAY DIFFRACTION</subject><subject>ZINC OXIDES</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2004</creationdate><recordtype>article</recordtype><recordid>eNp1kM9LwzAYhoMoOKcH_4OAJw-d-ZqmbQ4eZKgTBrvoRYTQ5kcX2ZKaZEL_ezs3j54-Xnh4eb8HoWsgMyAlvYMZ1JRxDidoAqSqMgpQn6IJIYRmJWdwji5i_BwjyymdoI_FoILvtMuU77XCa9utsfRO7WSy3zYN-N2tsLGbbcRK9z7aNFLtgEOjrM9M0F877eSAt03ndAre4djvUtLBuu4SnZlmE_XV8U7R29Pj63yRLVfPL_OHZSZpVaUs11Apxsk4m5WmKCAHU7O2BMMKRUnRtFQ2Na1qakomKy41V23Oc11qKIAbOkU3h14fkxVRjhvlenzCaZlEPmopCs5G6vZAyeBjDNqIPthtEwYBROzlCRBHeSN7f2D3ZU2y3v0P_xkUvwbF3iD9AXxudtA</recordid><startdate>20041206</startdate><enddate>20041206</enddate><creator>Chen, Liang-Yih</creator><creator>Chen, Wen-Hwa</creator><creator>Wang, Jia-Jun</creator><creator>Hong, Franklin Chau-Nan</creator><creator>Su, Yan-Kuin</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>20041206</creationdate><title>Hydrogen-doped high conductivity ZnO films deposited by radio-frequency magnetron sputtering</title><author>Chen, Liang-Yih ; Chen, Wen-Hwa ; Wang, Jia-Jun ; Hong, Franklin Chau-Nan ; Su, Yan-Kuin</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c377t-2e17d59059956f44121f85b61f54d304ab3ca83783f65c79ce9db292e6e1419f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2004</creationdate><topic>CARRIER DENSITY</topic><topic>CARRIER MOBILITY</topic><topic>DEPOSITION</topic><topic>DOPED MATERIALS</topic><topic>ELECTRIC CONDUCTIVITY</topic><topic>ELECTRONS</topic><topic>HYDROGEN</topic><topic>MAGNETRONS</topic><topic>MATERIALS SCIENCE</topic><topic>OXYGEN</topic><topic>RADIOWAVE RADIATION</topic><topic>SEMICONDUCTOR MATERIALS</topic><topic>SPECTROSCOPY</topic><topic>SPUTTERING</topic><topic>SUBSTRATES</topic><topic>THIN FILMS</topic><topic>ULTRAVIOLET SPECTRA</topic><topic>VACANCIES</topic><topic>VISIBLE SPECTRA</topic><topic>X-RAY DIFFRACTION</topic><topic>ZINC OXIDES</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chen, Liang-Yih</creatorcontrib><creatorcontrib>Chen, Wen-Hwa</creatorcontrib><creatorcontrib>Wang, Jia-Jun</creatorcontrib><creatorcontrib>Hong, Franklin Chau-Nan</creatorcontrib><creatorcontrib>Su, Yan-Kuin</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Chen, Liang-Yih</au><au>Chen, Wen-Hwa</au><au>Wang, Jia-Jun</au><au>Hong, Franklin Chau-Nan</au><au>Su, Yan-Kuin</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Hydrogen-doped high conductivity ZnO films deposited by radio-frequency magnetron sputtering</atitle><jtitle>Applied physics letters</jtitle><date>2004-12-06</date><risdate>2004</risdate><volume>85</volume><issue>23</issue><spage>5628</spage><epage>5630</epage><pages>5628-5630</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Hydrogen-doped zinc oxide (ZnO:
H
) films were deposited by rf magnetron sputtering as transparent conductive films. The resistivity of ZnO:
H
film was significantly reduced by the addition of
H
2
in Ar during rf sputtering. The electrical resistivity of ZnO:
H
films reached
2
×
10
−
4
Ω
cm
. The carrier concentration increased with increasing
H
2
concentration during deposition. X-ray diffraction results showed that the
d
0002
interplanar spacing increased with increasing
H
2
concentrations. The carrier concentration was significantly reduced in two orders of magnitude by increasing the substrate temperature from 150 to 250°C during deposition. Both results suggested that the increase of carrier concentration by adding
H
2
during sputtering was due to the hydrogen donor rather than the oxygen vacancies in ZnO films, consistent with the theoretical predictions by Van de Walle. UV-visible spectroscopy further showed that the transmittance is high up to 100% in the visible range. The band gap determined by optical absorption increased with increasing
H
2
composition. The phenomenon is interpreted as the filling of conduction band by electrons in
n
-type semiconductor.</abstract><cop>United States</cop><pub>American Institute of Physics</pub><doi>10.1063/1.1835991</doi><tpages>3</tpages></addata></record> |
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| ispartof | Applied physics letters, 2004-12, Vol.85 (23), p.5628-5630 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_osti_scitechconnect_20634495 |
| source | AIP Journals Complete; AIP Digital Archive |
| subjects | CARRIER DENSITY CARRIER MOBILITY DEPOSITION DOPED MATERIALS ELECTRIC CONDUCTIVITY ELECTRONS HYDROGEN MAGNETRONS MATERIALS SCIENCE OXYGEN RADIOWAVE RADIATION SEMICONDUCTOR MATERIALS SPECTROSCOPY SPUTTERING SUBSTRATES THIN FILMS ULTRAVIOLET SPECTRA VACANCIES VISIBLE SPECTRA X-RAY DIFFRACTION ZINC OXIDES |
| title | Hydrogen-doped high conductivity ZnO films deposited by radio-frequency magnetron sputtering |
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