Gallium diffusion into self-assembled InAs quantum dots grown on indium phosphide substrates
The photoluminescence spectrum of small self-assembled In(Ga)As quantum dots grown on InP substrates is composed of distinct spectral lines. These lines correspond to monolayer variations in the dots smallest dimension: their heights. We use this phenomenon in order to study the diffusion of gallium...
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| Veröffentlicht in: | Applied physics letters 2004-10, Vol.85 (16), p.3578-3580 |
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| container_title | Applied physics letters |
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| creator | Raz, T. Shuall, N. Bahir, G. Ritter, D. Gershoni, D. Chu, S. N. G. |
| description | The photoluminescence spectrum of small self-assembled In(Ga)As quantum dots grown on InP substrates is composed of distinct spectral lines. These lines correspond to monolayer variations in the dots smallest dimension: their heights. We use this phenomenon in order to study the diffusion of gallium atoms into the self-assembled quantum dots. We demonstrate that substantial amounts of gallium atoms diffuse from a strained GaInP layer underneath the quantum dots into the quantum dots. |
| doi_str_mv | 10.1063/1.1806277 |
| format | Article |
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N. G.</creatorcontrib><title>Gallium diffusion into self-assembled InAs quantum dots grown on indium phosphide substrates</title><title>Applied physics letters</title><description>The photoluminescence spectrum of small self-assembled In(Ga)As quantum dots grown on InP substrates is composed of distinct spectral lines. These lines correspond to monolayer variations in the dots smallest dimension: their heights. We use this phenomenon in order to study the diffusion of gallium atoms into the self-assembled quantum dots. We demonstrate that substantial amounts of gallium atoms diffuse from a strained GaInP layer underneath the quantum dots into the quantum dots.</description><subject>ATOMS</subject><subject>DIFFUSION</subject><subject>GALLIUM</subject><subject>GALLIUM ARSENIDES</subject><subject>INDIUM ARSENIDES</subject><subject>INDIUM PHOSPHIDES</subject><subject>LAYERS</subject><subject>MATERIALS SCIENCE</subject><subject>MOLECULAR BEAM EPITAXY</subject><subject>PHOTOLUMINESCENCE</subject><subject>QUANTUM DOTS</subject><subject>SEMICONDUCTOR MATERIALS</subject><subject>SUBSTRATES</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2004</creationdate><recordtype>article</recordtype><recordid>eNp10EFLwzAUwPEgCs7pwW8Q8OShM-lr0_YijKFzMPCiNyGkSWojXTL7UsRvb-uGN0-PB7_3Dn9CrjlbcCbgji94yURaFCdkxllRJMB5eUpmjDFIRJXzc3KB-DGueQowI29r1XVu2FHjmmZAFzx1PgaKtmsShWh3dWcN3fgl0s9B-TjREJG-9-HL019upvt9G3DfOmMpDjXGXkWLl-SsUR3aq-Ock9fHh5fVU7J9Xm9Wy22igbOYZCw3WV4bC6VWtRA5gCgaxVSaZ6w2RquyTkWpNctsKUzGKhgFr63lRV4VAHNyc_gbMDqJ2kWrWx28tzrKdMySAVSjuj0o3QfE3jZy37ud6r8lZ3KKJ7k8xhvt_cFOz1Qcs_yPjwXlX0HpPPwA6pR3SA</recordid><startdate>20041018</startdate><enddate>20041018</enddate><creator>Raz, T.</creator><creator>Shuall, N.</creator><creator>Bahir, G.</creator><creator>Ritter, D.</creator><creator>Gershoni, D.</creator><creator>Chu, S. 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These lines correspond to monolayer variations in the dots smallest dimension: their heights. We use this phenomenon in order to study the diffusion of gallium atoms into the self-assembled quantum dots. We demonstrate that substantial amounts of gallium atoms diffuse from a strained GaInP layer underneath the quantum dots into the quantum dots.</abstract><cop>United States</cop><pub>American Institute of Physics</pub><doi>10.1063/1.1806277</doi><tpages>3</tpages></addata></record> |
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| ispartof | Applied physics letters, 2004-10, Vol.85 (16), p.3578-3580 |
| issn | 0003-6951 1077-3118 |
| language | eng |
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| source | AIP Journals Complete; AIP Digital Archive |
| subjects | ATOMS DIFFUSION GALLIUM GALLIUM ARSENIDES INDIUM ARSENIDES INDIUM PHOSPHIDES LAYERS MATERIALS SCIENCE MOLECULAR BEAM EPITAXY PHOTOLUMINESCENCE QUANTUM DOTS SEMICONDUCTOR MATERIALS SUBSTRATES |
| title | Gallium diffusion into self-assembled InAs quantum dots grown on indium phosphide substrates |
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