Spin injection across ( 110 ) interfaces: Fe ∕ GaAs ( 110 ) spin-light-emitting diodes

We report electrical spin injection from an Fe contact into a ( 110 ) -oriented light-emitting diode (LED) structure, and compare results with data obtained from ( 001 ) -oriented structures to address the dependence of spin injection on interface and orientation. Fe ∕ AlGaAs ∕ GaAs LEDs were grown...

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Veröffentlicht in:	Applied physics letters 2004-08, Vol.85 (9), p.1544-1546
Hauptverfasser:	Li, C. H., Kioseoglou, G., van 't Erve, O. M. J., Hanbicki, A. T., Jonker, B. T., Mallory, R., Yasar, M., Petrou, A.
Format:	Artikel
Sprache:	eng
Schlagworte:	ALUMINIUM ARSENIDES CHARGED-PARTICLE TRANSPORT COMPARATIVE EVALUATIONS GALLIUM ARSENIDES INTERFACES IRON LIFETIME LIGHT EMITTING DIODES MATERIALS SCIENCE MOLECULAR BEAM EPITAXY QUANTUM WELLS RELAXATION TIME SEMICONDUCTOR MATERIALS SPIN SPIN ORIENTATION TEMPERATURE DEPENDENCE TUNNEL EFFECT
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