Bi surfactant effects on ordering in GaInP grown by organometallic vapor-phase epitaxy

The effect of the isoelectronic surfactant Bi on surface structure and ordering has been studied for GaInP semiconductor alloys grown by organometallic vapor-phase epitaxy. A small amount of Bi (trimethylbismuth) added during growth is found to result in disordering for layers grown using conditions...

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Veröffentlicht in:	Applied physics letters 2000-05, Vol.76 (19), p.2716-2718
Hauptverfasser:	Jun, S. W., Fetzer, C. M., Lee, R. T., Shurtleff, J. K., Stringfellow, G. B.
Format:	Artikel
Sprache:	eng
Schlagworte:	BISMUTH EXPERIMENTAL DATA GALLIUM PHOSPHIDES GROWTH INDIUM PHOSPHIDES MATERIALS SCIENCE MICROSCOPY SURFACTANTS VAPOR PHASE EPITAXY
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