Formation of thermal decomposition cavities in physical vapor transport of silicon carbide

The relationship between seed mounting and the formation of thermal decomposition cavities in physical vapor transport grown silicon carbide was investigated. Scanning electron microscopy, energy dispersive x-ray spectroscopy, Auger electron spectroscopy, and optical microscopy were used to characte...

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Veröffentlicht in:	Journal of electronic materials 2000-03, Vol.29 (3), p.347-352
Hauptverfasser:	Sanchez, Edward K., Kuhr, Thomas, Heydemann, Volker D., Snyder, David W., Rohrer, Gregory S., Skowronski, Marek
Format:	Artikel
Sprache:	eng
Schlagworte:	DIFFUSION MATERIALS SCIENCE MICROSCOPY MICROSTRUCTURE PHYSICAL VAPOR DEPOSITION POROSITY PYROLYSIS SILICON CARBIDES SPECTROSCOPY
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